High-rate-gas-flow microwave plasma etching of silicon

High-rate-gas-flow microwave plasma etching of silicon

A high-rate-gas-flow plasma etching technique using a very low gas pressure and very high pumping rate is described. The principle of high-flow etching is discussed. A high etch rate of 1300 nm/min at 0.5 mtorr has been obtained for the Cl/sub 2/ ECR high-flow system with a bias of -50 V. Low gas pr...

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Bibliographic Details
Published in:1992 Symposium on VLSI Technology Digest of Technical Papers pp. 46 - 47
Main Authors: Tsujimoto, K., Kumihashi, T., Kohuji, N., Tachi, S.
Format: Conference Proceeding
Language:English
Published: IEEE 1992
Subjects:
Dry etching
Fabrication
Fluid flow
Laboratories
Plasma applications
Plasma simulation
Plasma temperature
Semiconductor device modeling
Silicon
Surface discharges
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Summary:A high-rate-gas-flow plasma etching technique using a very low gas pressure and very high pumping rate is described. The principle of high-flow etching is discussed. A high etch rate of 1300 nm/min at 0.5 mtorr has been obtained for the Cl/sub 2/ ECR high-flow system with a bias of -50 V. Low gas pressure discharge with high flow rate is applicable to VLSI processing. Highly directional, low-contamination etching is possible using this etching system.< >
ISBN:0780306988
9780780306981
DOI:10.1109/VLSIT.1992.200639