Properties of tantalum oxide thin films grown by atomic layer deposition

Properties of tantalum oxide thin films grown by atomic layer deposition

Thin tantalum oxide films were deposited using atomic layer deposition from TaCl 5 and H 2O at temperatures in the range 80–500 °C. The films deposited at temperatures below 300 °C were predominantly amorphous, whereas those grown at higher temperatures were polycrystalline containing the phases TaO...

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Bibliographic Details
Published in:Thin solid films Vol. 260; no. 2; pp. 135 - 142
Main Authors: Kukli, Kaupo, Aarik, Jaan, Aidla, Aleks, Kohan, Oksana, Uustare, Teet, Sammelselg, Väino
Format: Journal Article
Language:English
Published: Lausanne Elsevier B.V 15-05-1995
Elsevier Science
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Deposition process
Exact sciences and technology
Insulators
Optical coatings
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Oxides
Physics
Structural properties
Oxides
Optical coatings
Structural properties
Deposition process
Tantalum oxides
Deposition rate
XRD
Absorptance
Experimental study
Amorphous phase
Surface states
Thin films
Energy gap
Temperature effects
Morphology
Optical properties
Structure
Tantalum chlorides
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Summary:Thin tantalum oxide films were deposited using atomic layer deposition from TaCl 5 and H 2O at temperatures in the range 80–500 °C. The films deposited at temperatures below 300 °C were predominantly amorphous, whereas those grown at higher temperatures were polycrystalline containing the phases TaO 2 and Ta 2O 5. The oxygen to tantalum mass concentration ratio corresponded to that of TaO 2 at all growth temperatures. The optical band gap was close to 4.2 eV for amorphous films and ranged from 3.9 to 4.5 eV for polycrystalline films. The refractive index measured at λ = 550 nm increased from 1.97 to 2.20 with an increase in growth temperature from 80 to 300 °C. The films deposited at 80 °C showed low absorption with absorption coefficients of less than 100 cm −1 in the visible region.
Bibliography:ObjectType-Article-2
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content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(94)06388-5