Search Results - "Kogler, Reinhard"

Scanning spreading resistance microscopy of defect engineered low dose SIMOX samples by Vines, Lasse, Kögler, Reinhard, Kuznetsov, Andrej Yu

“…Modification of SiO 2 precipitate formation by defect engineering of SIMOX (separation by implanted oxygen) process was studied using cross section scanning…”
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Forming-Free Resistive Switching in Multiferroic BiFeO3 thin Films with Enhanced Nanoscale Shunts by Ou, Xin, Shuai, Yao, Luo, Wenbo, Siles, Pablo F, Kögler, Reinhard, Fiedler, Jan, Reuther, Helfried, Zhou, Shengqiang, Hübner, René, Facsko, Stefan, Helm, Manfred, Mikolajick, Thomas, Schmidt, Oliver G, Schmidt, Heidemarie

“…A controlled shunting of polycrystalline oxide thin films on the nanometer length scale opens the door to significantly modify their transport properties. In…”
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Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy by Ou, Xin, Kanungo, Pratyush Das, Kögler, Reinhard, Werner, Peter, Gösele, Ulrich, Skorupa, Wolfgang, Wang, Xi

“…Individual silicon nanowires (NWs) doped either by ion implantation or by in situ dopant incorporation during NW growth were investigated by scanning spreading…”
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Release of helium from vacancy defects in yttria-stabilized zirconia under irradiation by Ou, Xin, Kögler, Reinhard, Zhou, Hong-Bo, Anwand, Wolfgang, Grenzer, Jörg, Hübner, René, Voelskow, Matthias, Butterling, Maik, Zhou, Shengqiang, Skorupa, Wolfgang

“…Fission gas retention or release has a critical impact on the function of advanced nuclear materials. Helium trapping in, and release from, radiation defects…”
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Dual-beam irradiation of friction stir spot welding of nanostructured ferritic oxide dispersion strengthened alloy by Chen, Chun-Liang, Richter, Asta, Kögler, Reinhard, Wu, Lung-Tien

“…► FSSW has been successfully applied to join two sheets of ODS material. ► Dynamic recrystallization occurs in the thermo mechanically affected zone, resulting…”
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The use of nanocavities for the fabrication of ultrathin buried oxide layers by Ou, Xin, Kögler, Reinhard, Mücklich, Arndt, Skorupa, Wolfgang, Möller, Wolfhard, Wang, Xi, Vines, Lasse

“…A continuous buried oxide layer with a thickness of only 58 nm is formed in silicon by oxygen implantation at 185 keV with a very low ion fluence of 1 × 10 17 …”
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Dual-beam irradiation of friction stir spot welding of nanostructured ferritic oxide dispersion strengthened alloy by Chen, Chun-Liang, Richter, Asta, Kogler, Reinhard, Wu, Lung-Tien

“…Nanostructured ferritic oxide dispersion strengthened (ODS) alloys usually contain a high density of Y-A1-0 and Y-Ti-0 nanoparticles, high dislocation…”
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Fabrication of horizontal silicon nanowire arrays on insulator by ion irradiation by Ou, Xin, Kögler, Reinhard, Wei, Xing, Mücklich, Arndt, Wang, Xi, Skorupa, Wolfgang, Facsko, Stefan

“…We report a simple and potentially mass productive technique to fabricate horizontal single crystalline Si nanowire arrays on insulating substrate based on a…”
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Isotopic comparative method (ICM) for the determination of variations of the ion yields in boron-doped silicon as a function of oxygen concentration in the 0-10 at.% range by Dupuy, Jean-Claude, Dubois, Christiane, Prudon, Gilles, Gautier, Brice, Kögler, Reinhard, Akhmadaliev, Shavkat, Perrat-Mabilon, Angela, Peaucelle, Christophe

“…Specific samples containing 18O and 16O are used to measure the variations of the relative ion yields of boron, oxygen and silicon as a function of oxygen…”
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Novel Method to Fabricate Silicon Nanowire p-n Junctions by a Combination of Ion Implantation and in-situ Doping by Kanungo, Pratyush Das, Kögler, Reinhard, Werner, Peter, Gösele, Ulrich, Skorupa, Wolfgang

“…We demonstrate a novel method to fabricate an axial p-n junction inside oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining…”
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Acceptor deactivation in individual silicon nanowires: From thickto ultrathin by Ou, Xin, Geyer, Nadine, Kögler, Reinhard, Werner, Peter, Skorupa, Wolfgang

“…We investigate the doping behavior in the ultrathin part of individual free standing spicular or conic silicon nanowires (NWs) by measuring the local…”
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Acceptor deactivation in individual silicon nanowires: From thick to ultrathin by Ou, Xin, Geyer, Nadine, Kögler, Reinhard, Werner, Peter, Skorupa, Wolfgang

“…We investigate the doping behavior in the ultrathin part of individual free standing spicular or conic silicon nanowires (NWs) by measuring the local…”
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Three-Dimensional Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy by Ou, Xin, Kanungo, Pratyush Das, Kögler, Reinhard, Werner, Peter, Gösele, Ulrich, Skorupa, Wolfgang, Wang, Xi

“…Three‐dimensional profiling of nanowires is carried out by repeatedly scanning the same nanowire with controlled force of the probing tip. This method abrades…”
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Forming-Free Resistive Switching in Multiferroic BiFeO 3 thin Films with Enhanced Nanoscale Shunts by Ou, Xin, Shuai, Yao, Luo, Wenbo, Siles, Pablo F., Kögler, Reinhard, Fiedler, Jan, Reuther, Helfried, Zhou, Shengqiang, Hübner, René, Facsko, Stefan, Helm, Manfred, Mikolajick, Thomas, Schmidt, Oliver G., Schmidt, Heidemarie

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A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping by Kanungo, PratyushDas, Kögler, Reinhard, Werner, Peter, Gösele, Ulrich, Skorupa, Wolfgang

“…We demonstrate a novel method to fabricate an axial p – n junction inside oriented short vertical silicon nanowires grown by molecular beam epitaxy by…”
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Efficient oxygen gettering in Si by coimplantation of hydrogen and helium by Ou, Xin, Kögler, Reinhard, Mücklich, Arndt, Skorupa, Wolfgang, Möller, Wolfhard, Wang, Xi, Gerlach, Jürgen W., Rauschenbach, Bernd

“…Hydrogen preimplantation performed in addition to helium implantation efficiently shrinks the width of the gettering layer in Si and increases the empty volume…”
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Gettering layer for oxygen accumulation in the initial stage of SIMOX processing by Ou, Xin, Kögler, Reinhard, Skorupa, Wolfgang, Möller, Wolfhard, Wang, Xi, Gerlach, Jürgen W.

“…A cavity layer or nano-bubble layer introduced by He implantation before the oxygen implantation collects the implanted oxygen and increases the oxygen…”
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