Search Results - "Kofuji, Naoyuki"

Deposition profile of ammonium bromide in N2/HBr plasmas for high-aspect-ratio multilayer etching by Iwase, Taku, Kofuji, Naoyuki, Yokogawa, Kenetsu, Mori, Masahito

“…The deposition profile of ammonium bromide in N2/HBr plasmas was evaluated as a function of depth in a macro-cavity structure for the high-aspect-ratio etching…”
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Mechanism of wiggling enhancement due to HBr gas addition during amorphous carbon etching by Kofuji, Naoyuki, Ishimura, Hiroaki, Kobayashi, Hitoshi, Une, Satoshi

“…The effect of gas chemistry during etching of an amorphous carbon layer (ACL) on wiggling has been investigated, focusing especially on the changes in residual…”
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Line-edge roughness increase due to wiggling enhanced by initial pattern waviness by Kofuji, Naoyuki, Negishi, Nobuyuki, Ishimura, Hiroaki, Nishida, Toshiaki, Kobayashi, Hitoshi

“…To clarify whether pattern waviness due to line-edge-roughness enhances wiggling, distortion of straight and wavy patterns was numerically analyzed by the…”
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Creation of a Degraded Layer on the Surface of Photoresist by Radical Irradiation by Kofuji, Naoyuki

“…A novel mechanism of the inclination of a photoresist mask based on the experimental evaluation of the change in the quality of the irradiated surface layer of…”
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Investigation of Mask Inclination Due to Oxygen-Radical Irradiation during Resist Trimming by Kofuji, Naoyuki

“…A novel analytical method for predicting the inclination of a resist mask during its trimming process has been proposed by considering the formation of the…”
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Uniform lateral etching of tungsten in deep trenches utilizing reaction-limited NF3 plasma process by Kofuji, Naoyuki, Mori, Masahito, Nishida, Toshiaki

“…The reaction-limited etching of tungsten (W) with NF3 plasma was performed in an attempt to achieve the uniform lateral etching of W in a deep trench, a…”
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Deposition profile of ammonium bromide in N 2 /HBr plasmas for high-aspect-ratio multilayer etching by Iwase, Taku, Kofuji, Naoyuki, Yokogawa, Kenetsu, Mori, Masahito

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Uniform lateral etching of tungsten in deep trenches utilizing reaction-limited NF 3 plasma process by Kofuji, Naoyuki, Mori, Masahito, Nishida, Toshiaki

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Uniform lateral etching of tungsten in deep trenches utilizing reaction-limited NF^sub 3^ plasma process by Kofuji, Naoyuki, Mori, Masahito, Nishida, Toshiaki

“…The reaction-limited etching of tungsten (W) with NF3 plasma was performed in an attempt to achieve the uniform lateral etching of W in a deep trench, a…”
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Short‐gas‐residence‐time electron cyclotron resonance plasma etching by Tsujimoto, Kazunori, Kumihashi, Takao, Kofuji, Naoyuki, Tachi, Shin’ichi

“…This paper describes short‐gas‐residence‐time electron cyclotron resonance plasma etching for high etch rates, reduced contamination, and highly anisotropic…”
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Negative Impact of Etched Si Area on Selectivity and Positive Impact of Photoelectric Current on Etched Profile in Gate Etching with Different Wafer Bias Frequencies by Kamibayashi, Masami, Kofuji, Naoyuki, Mori, Masahito, Negishi, Nobuyuki

“…The effect of wafer-bias frequency on the dummy-gate fabrication of fin-shaped field-effect transistor (Fin-FET) was investigated. The clear difference in the…”
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Reduction in microloading by high-gas-flow-rate electron cyclotron resonance plasma etching by KOFUJI, N, TSUJIMOTO, K, KUMIHASHI, T, TACHI, S

“…High-gas-flow-rate electron cyclotron resonance plasma etching was employed to reduce microloading in Si etching with Cl 2 at low pressure. Microloading…”
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Near-surface interactions and their etching-reaction model in metal plasma-assisted etching by Tachi, Shinichi, Izawa, Masaru, Tsujimoto, Kazunori, Kure, Tokuo, Kofuji, Naoyuki, Suzuki, Keizo, Hamasaki, Ryoji, Kojima, Masayuki

“…Reactive interactions in plasma etching have been investigated. Simple gas-phase transport of etchants and the reaction by-products in the wafer near-surface…”
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