Search Results - "Koerperick, E.J"

Optimization of MBE-grown GaSb buffer layers and surface effects of antimony stabilization flux by Koerperick, E.J., Murray, L.M., Norton, D.T., Boggess, T.F., Prineas, J.P.

“…Growth optimization of unintentionally doped GaSb buffer layers on (1 0 0) GaSb substrates by molecular beam epitaxy is reported. Several growth parameters…”
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High-Power MWIR Cascaded InAs-GaSb Superlattice LEDs by Koerperick, E.J., Olesberg, J.T., Hicks, J.L., Prineas, J.P., Boggess, T.F.

“…Midwave IR LEDs operating at 3.8 mum with output powers approaching 25 mW at 77 K are reported. Devices based on the InAs-GaSb superlattice material system…”
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Active Region Cascading for Improved Performance in InAs-GaSb Superlattice LEDs by Koerperick, E.J., Olesberg, J.T., Hicks, J.L., Prineas, J.P., Boggess, T.F.

“…Cascading of active regions in InAs-GaSb superlattice light-emitting diodes (LEDs) grown by molecular beam epitaxy is demonstrated as an effective means of…”
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Flip Chip Bonding of 68 [Formula Omitted] 68 MWIR LED Arrays by Das, N.C, Taysing-Lara, M, Olver, K.A, Kiamilev, F, Prineas, J.P, Olesberg, J.T, Koerperick, E.J, Murray, L.M, Boggess, T.F

“…The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68times68 mid wave infrared (MWIR) LED array was…”
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Flip Chip Bonding of 68 \times 68 MWIR LED Arrays by Das, N.C., Taysing-Lara, M., Olver, K.A., Kiamilev, F., Prineas, J.P., Olesberg, J.T., Koerperick, E.J., Murray, L.M., Boggess, T.F.

“…The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68times68 mid wave infrared (MWIR) LED array was…”
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