Search Results - "Koerperick, E. J."

Optimization of MBE-grown GaSb buffer layers and surface effects of antimony stabilization flux by Koerperick, E.J., Murray, L.M., Norton, D.T., Boggess, T.F., Prineas, J.P.

“…Growth optimization of unintentionally doped GaSb buffer layers on (1 0 0) GaSb substrates by molecular beam epitaxy is reported. Several growth parameters…”
Get full text

Electron and hole spin dynamics in semiconductor quantum dots by Gündoğdu, K., Hall, K. C., Koerperick, E. J., Pryor, C. E., Flatté, M. E., Boggess, Thomas F., Shchekin, O. B., Deppe, D. G.

“…We report direct measurement of the spin dynamics of electrons and holes in self-assembled InAs quantum dots (QDs) through polarization-sensitive time-resolved…”
Get full text

Flip Chip Bonding of 68 [Formula Omitted] 68 MWIR LED Arrays by Das, N.C, Taysing-Lara, M, Olver, K.A, Kiamilev, F, Prineas, J.P, Olesberg, J.T, Koerperick, E.J, Murray, L.M, Boggess, T.F

“…The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68times68 mid wave infrared (MWIR) LED array was…”
Get full text

Flip Chip Bonding of 68 x 68 MWIR LED Arrays by CHANDRA DAS, Naresh, TAYSING-LARA, Monica, ANDERSON OLVER, Kimberley, KIAMILEV, Fouad, PRINEAS, J. P, OLESBERG, J. T, KOERPERICK, E. J, MURRAY, L. M, BOGGESS, Tom F

Get full text

Flip Chip Bonding of 68 \times 68 MWIR LED Arrays by Das, N.C., Taysing-Lara, M., Olver, K.A., Kiamilev, F., Prineas, J.P., Olesberg, J.T., Koerperick, E.J., Murray, L.M., Boggess, T.F.

“…The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68times68 mid wave infrared (MWIR) LED array was…”
Get full text

Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states by Hall, K. C., Koerperick, E. J., Boggess, Thomas F., Shchekin, O. B., Deppe, D. G.

“…The authors report measurements of hole spin relaxation in neutral InGaAs quantum dots using polarization-dependent time-resolved photoluminescence…”
Get full text

High-Power MWIR Cascaded InAs-GaSb Superlattice LEDs by Koerperick, E.J., Olesberg, J.T., Hicks, J.L., Prineas, J.P., Boggess, T.F.

“…Midwave IR LEDs operating at 3.8 mum with output powers approaching 25 mW at 77 K are reported. Devices based on the InAs-GaSb superlattice material system…”
Get full text

High-Power MWIR Cascaded InAsaGaSb Superlattice LEDs by Koerperick, E J, Olesberg, J T, Hicks, J L, Prineas, J P, Boggess, T F

“…Midwave IR LEDs operating at 3.8 mum with output powers approaching 25 mW at 77 K are reported. Devices based on the InAs-GaSb superlattice material system…”
Get full text

Active Region Cascading for Improved Performance in InAs-GaSb Superlattice LEDs by Koerperick, E.J., Olesberg, J.T., Hicks, J.L., Prineas, J.P., Boggess, T.F.

“…Cascading of active regions in InAs-GaSb superlattice light-emitting diodes (LEDs) grown by molecular beam epitaxy is demonstrated as an effective means of…”
Get full text

In As ∕ Ga Sb cascaded active region superlattice light emitting diodesfor operation at 3.8 μ m by Koerperick, E. J., Olesberg, J. T., Boggess, T. F., Hicks, J. L., Wassink, L. S., Murray, L. M., Prineas, J. P.

“…We report on the growth and characterization of In As ∕ Ga Sb superlattice light emitting diodes (LEDs) operating in the midwave infrared at 3.8 μ m at 77 K …”
Get full text

In As ∕ Ga Sb cascaded active region superlattice light emitting diodes for operation at 3.8μm by Koerperick, E. J., Olesberg, J. T., Boggess, T. F., Hicks, J. L., Wassink, L. S., Murray, L. M., Prineas, J. P.

“…We report on the growth and characterization of InAs∕GaSb superlattice light emitting diodes (LEDs) operating in the midwave infrared at 3.8μm at 77K. Devices…”
Get full text