Effects of magnetic flux density and substrate bias voltage on Ni films prepared on a flexible substrate material using unbalanced magnetron sputtering assisted by inductively coupled plasma

The authors fabricated Ni films on a flexible substrate material using unbalanced magnetron sputtering assisted by inductively coupled plasma. The effects of magnetic flux density B C and substrate DC bias voltage V S on the Ni film structures were investigated. For V S = −40 V, the average surface...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vol. 32; no. 2
Main Authors: Koda, Tatsunori, Toyota, Hiroshi
Format: Journal Article
Language:English
Published: United States 01-03-2014
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Summary:The authors fabricated Ni films on a flexible substrate material using unbalanced magnetron sputtering assisted by inductively coupled plasma. The effects of magnetic flux density B C and substrate DC bias voltage V S on the Ni film structures were investigated. For V S = −40 V, the average surface grain size D G measured by atomic force microscopy for B C = 0, 3, and 5 mT was 88.2, 95.4, and 104.4 nm, respectively. In addition, D G increased with V S. From x-ray diffraction measurements, the (111) and (200) peaks were clearly visible for the fabricated Ni films. The ratio of the integrated intensities of I(111)/I(200) increased with V S. For V S = −40 V and B C = 3 mT, a film resistivity ρ of 8.96 × 10−6 Ω cm was observed, which is close to the Ni bulk value of 6.84 × 10−6 Ω cm. From these results, the authors determined that the structure of the fabricated Ni films on the flexible substrate material was affected by the values of B C and V S.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.4832226