Search Results - "Kobeda"

Critical success factors for electronic manufacturing services by Kobeda, Eddie, Isaacs, Phil, Pymento, Larry

“…Ongoing developments in the electronics industry continue to be driven by alternative or disruptive technologies that are discovered in pursuit of satisfying…”
Get full text

A comparison of brief and ultrabrief pulse stimuli in unilateral ECT by Pisvejc, J, Hyrman, V, Sikora, J, Berankova, A, Kobeda, B, Auerova, M, Sochorova, V

“…A double-blind, randomized, comparative study of the therapeutic efficacy and side effects of unilateral electroconvulsive therapy (ECT) given with two…”
Get more information

Professional development courses for the 65th ECTC by Pearsall, Kitty, Suhling, Jeffrey, Kobeda, Eddie, Puttlitz, Albert F., Reynolds, Tom

“…Summary form only given. Paper covers the following topics: lead-free solder joints; fan-out wafer level packaging; package failure analysis; ultra-small smart…”
Get full text

SiO2 film stress distribution during thermal oxidation of Si by Kobeda, E., Irene, E. A.

“…A laser reflection technique is used to investigate the relaxation of SiO2 film stress which occurs during the dry thermal oxidation of Si between 700 and 1000…”
Get full text

Intrinsic SiO2 film stress measurements on thermally oxidized Si by Kobeda, E., Irene, E. A.

“…We have investigated the effects of varying Si oxidation conditions on intrinsic film stress for SiO2 films formed on Si. This study includes stress…”
Get full text

A measurement of intrinsic SiO2 film stress resulting from low temperature thermal oxidation of Si by Kobeda, E., Irene, E. A.

“…A parallel beam reflection technique has been developed in our laboratory for measuring intrinsic residual stress for Si wafers thermally oxidized at…”
Get full text

Effects of thermal history on stress‐related properties of very thin films of thermally grown silicon dioxide by Fitch, J. T., Lucovsky, G., Kobeda, E., Irene, E. A.

“…This paper presents studies of the infrared (IR) absorbance and the intrinsic stress in thermally grown very thin films (60 to 700 Å) of SiO2. These data are…”
Get full text

I n s i t u stress measurements during thermal oxidation of silicon by Kobeda, E., Irene, E. A.

“…A two‐beam laser reflection technique was used to measure SiO2 film stress during Si oxidation, i.e., i n s i t u at the growth temperature. Results show a…”
Get full text

A high performance epitaxial SiGe-base ECL BiCMOS technology by Harame, Crabbe, Cressler, Comfort, Sun, Stiffler, Kobeda, Burghartz, Gilbert, Malinowski, Dally, Ratanaphanyarat, Saccamango, Rausch, Cotte, Chu, Stork

“…In this work we present a high speed, self-aligned SiGe epitaxial-base ECL BiCMOS technology in which we achieved a record 18.9 ps ECL gate delay at 7.7 mW, 59…”
Get full text