Search Results - "Ko, Tsun"

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  1. 1

    Prediabetes and risk of active tuberculosis: a cohort study from Northern Taiwan by Ko, Tsun-Hao, Chang, Yi-Cheng, Chang, Chia-Hsuin, Liao, Karen Chia-Wen, Magee, Matthew J, Lin, Hsien-Ho

    Published in International journal of epidemiology (06-06-2023)
    “…Abstract Background Diabetes mellitus (DM) is a well-established risk factor for active tuberculosis (TB) infection. Despite the worldwide rapid increase in…”
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    Journal Article
  2. 2

    GaN-Based Light-Emitting Diode With Sputtered AlN Nucleation Layer by Yen, Cheng-Hsiung, Lai, Wei-Chih, Yang, Ya-Yu, Wang, Chun-Kai, Ko, Tsun-Kai, Hon, Schang-Jing, Chang, Shoou-Jinn

    Published in IEEE photonics technology letters (15-02-2012)
    “…The crystal quality, electrical, and optical characteristics of GaN-based light-emitting diodes (LEDs) were improved using a sputtered AlN nucleation layer…”
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    Journal Article
  3. 3

    GaN-Based LEDs With a Chirped Multiquantum Barrier Structure by Yu-Yao Lin, Chuang, R. W., Shoou-Jinn Chang, Shuguang Li, Zhi-Yong Jiao, Tsun-Kai Ko, Hon, S. J., Liu, C. H.

    Published in IEEE photonics technology letters (15-09-2012)
    “…We report the fabrication of GaN-based blue light-emitting diodes (LEDs), which separately incorporate the three different electron blocking layers (EBLs),…”
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    Journal Article
  4. 4

    Numerical Simulation of GaN-Based LEDs With Chirped Multiquantum Barrier Structure by Chang, Shoou-Jinn, Lin, Yu-Yao, Liu, Chun-Hsing, Li, Shuguang, Ko, Tsun-Kai, Hon, Schang-Jing

    Published in IEEE journal of quantum electronics (01-04-2013)
    “…The authors report the numerical simulation of GaN-based light-emitting diodes (LEDs) with either a conventional AlGaN electron blocking layer (EBL), uniform…”
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    Journal Article
  5. 5

    Effect of Varied Undoped GaN Thickness on ESD and Optical Properties of GaN-Based LEDs by Chiang, Tsung-Hsun, Wang, Chun-Kai, Chang, Shoou-Jinn, Chiou, Yu-Zung, Ko, Tsun-Kai, Lin, Tien-Kun, Chang, Sheng-Po

    Published in IEEE photonics technology letters (15-05-2012)
    “…The optical property and electrostatic discharge (ESD) endurance of GaN-based light-emitting diodes (LEDs) with varied undoped GaN thickness are studied and…”
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    Journal Article
  6. 6

    Enhanced Current Spreading for GaN-Based Side-View LEDs by Adding an Metallic Stripe Across the Long Side of the Chip by Chang, L. M., Shoou-Jinn Chang, Jiao, Z. Y., Shen, C. F., Ko, T., Hon, S. J., Chiou, Y., Chiou, H. Y.

    Published in IEEE photonics technology letters (15-08-2012)
    “…The authors propose a simple method to enhance current spreading of GaN-based side-view light-emitting diodes (LEDs) by adding a metallic stripe across the…”
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    Journal Article
  7. 7

    An Examination of FORMOSAT-3/COSMIC Ionospheric Electron Density Profile: Data Quality Criteria and Comparisons with the IRI Model by Yang, Kuo-Feng, Chu, Yen-Hsyang, Su, Ching-Lun, Ko, Hsiao-Tsun, Wang, Chien-Ya

    “…In this article, we analyze the properties of ionospheric electron density profiling retrieved from FORMOSAT-3/COSMIC radio occultation measurements. Two…”
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    Journal Article
  8. 8

    Breast Reconstruction Use and Impact on Surgical and Oncologic Outcomes Amongst Inflammatory Breast Cancer Patients-A Systematic Review by Nair, Ananya Gopika, Ko, Gary Tsun Yin, Semple, John Laurie, Lim, David Wai

    Published in Current oncology (Toronto) (01-07-2023)
    “…Breast reconstruction is generally discouraged in women with inflammatory breast cancer (IBC) due to concerns with recurrence and poor long-term survival. We…”
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    Journal Article
  9. 9

    Factors Affecting the Preparation of Sr2Fe2−xMoxO6 by Fang, Tsang-Tse, Ko, Tsun-Fa

    Published in Journal of the American Ceramic Society (01-09-2003)
    “…Samples of Sr2Fe2−xMoxO6were prepared by solid‐state reaction in air and 5%H2–95%N2. X‐ray diffractometry was used to identify the phases and evaluate the…”
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    Journal Article
  10. 10

    structural transitions during leaching of Ni2Al3 phase in a Raney Ni-Al alloy by Wang, Rong, Lu, Zhilong, Ko, Tsun

    Published in Journal of materials science (01-12-2001)
    “…The microstructure transitions during leaching of a rapidly solidified Ni-Al alloy have been investigated by means of X-ray diffraction, transmission electron…”
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    Journal Article
  11. 11

    Vertical InGaN light-emitting diode with a retained patterned sapphire layer by Yang, Y C, Sheu, Jinn-Kong, Lee, Ming-Lun, Yen, C H, Lai, Wei-Chih, Hon, Schang Jing, Ko, Tsun Kai

    Published in Optics express (05-11-2012)
    “…We present an efficient vertical InGaN light-emitting diode (LED) in which the proposed vertical LEDs were fabricated with patterned sapphire substrates (PSS)…”
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    Journal Article
  12. 12

    Vertical InGaN light-emitting diodes with a sapphire-face-up structure by Yang, Y C, Sheu, Jinn-Kong, Lee, Ming-Lun, Tu, Shang-Ju, Huang, Feng-Wen, Lai, Wei-Chih, Hon, Schang Jing, Ko, Tsun Kai

    Published in Optics express (02-01-2012)
    “…Vertical GaN-based light-emitting diodes (LEDs) were fabricated with a Si substrate using the wafer-bonding technique. Lapping and dry-etching processes were…”
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    Journal Article
  13. 13

    Structural transitions during aluminum leaching of NiAl3 phase in a Raney Ni–Al alloy by Wang, Rong, Chen, Houwen, Lu, Zhilong, Qiu, Shaohong, Ko, Tsun

    Published in Journal of materials science (01-09-2008)
    “…Structural transitions during aluminum leaching of the NiAl 3 phase in a Raney nickel–aluminum alloy have been investigated by X-ray diffraction, transmission…”
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    Journal Article
  14. 14

    Factors Affecting the Preparation of Sr 2 Fe 2− x Mo x O 6 by Fang, Tsang‐Tse, Ko, Tsun‐Fa

    Published in Journal of the American Ceramic Society (01-09-2003)
    “…Samples of Sr 2 Fe 2− x Mo x O 6 were prepared by solid‐state reaction in air and 5%H 2 –95%N 2 . X‐ray diffractometry was used to identify the phases and…”
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    Journal Article
  15. 15
  16. 16

    High-Brightness InGaN-GaN Power Flip-Chip LEDs by Shoou-Jinn Chang, Chen, W.S., Shei, S.C., Kuo, C.T., Ko, T.K., Shen, C.F., Tsai, J.M., Wei-Chi Lai, Jinn-Kong Sheu, Lin, A.J.

    Published in Journal of lightwave technology (15-06-2009)
    “…We report the fabrication of InGaN-GaN power flip-chip (FC) light-emitting diodes (LEDs) with a roughened sapphire backside surface prepared by grinding. It…”
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    Journal Article
  17. 17

    Vertical InGaN light-emitting diode with a retained patterned sapphire layer by Yang, Y C, Sheu, Jinn-Kong, Lee, Ming-Lun, Yen, C H, Lai, Wei-Chih, Hon, Schang Jing, Ko, Tsun Kai

    Published in Optics express (05-11-2012)
    “…We present an efficient vertical InGaN light-emitting diode (LED) in which the proposed vertical LEDs were fabricated with patterned sapphire substrates (PSS)…”
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    Journal Article
  18. 18

    Leakage Current Analysis of Nitride Based Optoelectronics by Emission Microscopy Inspection by Yu-Zung Chiou, Tsun-Kai Ko, Chun-Kai Wang, Tien-Kun Lin, Kuan-Wei Lin

    Published in 2007 Asia-Pacific Microwave Conference (01-12-2007)
    “…GaN MSM photodetectors (PDs) and p-i-n photodetectors (PDs) with E-gun SiO2 passivation and plasma enhanced chemical vapor deposited (PECVD) SiO2 passivation…”
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    Conference Proceeding
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