Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires

The growth characteristics and film properties of magnesium oxide (MgO) thin films fabricated by plasma enhanced atomic layer deposition (PE-ALD) and thermal ALD (Th-ALD) were comparatively investigated for passivation layer applications. For both processes, well-saturated growth characteristics wer...

Full description

Saved in:

Bibliographic Details
Published in:	Journal of luminescence Vol. 145; pp. 307 - 311
Main Authors:	Song, Jeong-Gyu, Park, Jusang, Yoon, Jaehong, Woo, Hwangje, Ko, Kyungyong, Lee, Taeyoon, Hwang, Sung-Hwan, Myoung, Jae-Min, Kim, Keewon, Jang, Youngman, Kim, Kwangseok, Kim, Hyungjun
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 01-01-2014 Elsevier
Subjects:	Atomic layer deposition Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science; rheology Deposition Exact sciences and technology Luminescence Magnesium oxide Materials science Nanoscale materials and structures: fabrication and characterization Nanowires Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Passivation Photoluminescence Physics Quantum wires Thin films X-rays Zinc oxide ZnO nanowires ZnO nanowires Atomic layer deposition Magnesium oxide Photoluminescence Passivation Grain size Plasma Crystal orientation Growth rate Luminescence XRD Contamination Atomic layer epitaxial growth Thin films Transmission electron microscopy Zinc oxide Nanowires X-ray photoelectron spectra
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	The growth characteristics and film properties of magnesium oxide (MgO) thin films fabricated by plasma enhanced atomic layer deposition (PE-ALD) and thermal ALD (Th-ALD) were comparatively investigated for passivation layer applications. For both processes, well-saturated growth characteristics were observed, with a higher saturated growth rate for Th-ALD. X-ray photoemission analysis showed that very high purity MgO film with virtually no carbon contamination was deposited by PE-ALD. X-ray diffraction and transmission electron microscopy analysis showed that the PE-ALD MgO thin films had a larger grain size than the Th-ALD MgO thin films and were predominantly (111) crystal orientation. The photoluminescence analysis showed enhanced luminescence properties of the ALD MgO shell/ZnO nanowires. In particular, PE-ALD MgO showed greater enhancement of the luminescence properties than Th-ALD MgO. •Atomic layer deposition of Magnesium oxide (MgO) thin films were studied using Magnesium bis(cyclopentadienyl) (MgCp2) with H2O and O2 plasma.•PE-ALD MgO thin films show (111) orientation and have larger grain size than Th-ALD MgO thin films.•Enhanced luminescence properties of the ALD MgO shell/ZnO nanowires are observed.•PE-ALD MgO showed greater enhancement of the luminescence properties than Th-ALD MgO.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0022-2313 1872-7883
DOI:	10.1016/j.jlumin.2013.07.076