Search Results - "Ko, Hyoungsoo"
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Origin of surface potential change during ferroelectric switching in epitaxial PbTiO3 thin films studied by scanning force microscopy
Published in Applied physics letters (19-01-2009)“…We investigated the surface potential of the ferroelectric domains of the epitaxial PbTiO3 (PTO) films using both Kelvin probe and piezoresponse force…”
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Journal Article -
2
High-Resolution Field Effect Sensing of Ferroelectric Charges
Published in Nano letters (13-04-2011)“…Nanoscale manipulation of surface charges and their imaging are essential for understanding local electronic behaviors of polar materials and advanced…”
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Journal Article -
3
Multi-layered Vertical Gate NAND Flash overcoming stacking limit for terabit density storage
Published in 2009 Symposium on VLSI Technology (01-06-2009)“…Vertical Gate NAND (VG-NAND) Flash array with multi-active layers has been successfully integrated for the first time. VG-NAND confirmed stable operations of…”
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Conference Proceeding -
4
Interdigitated LDMOS
Published in 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01-05-2013)“…Novel Interdigitated LDMOS is experimented resulting in best in class R SP -BV DSS performance (21.8mΩ-mm 2 with BV DSS of 47V) in comparison to published…”
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Conference Proceeding -
5
Mechanism Investigation of Temperature Dependent Growth and Etching Process of GeCl4 on SiGe Surface: ab-initio Study
Published in 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27-09-2021)“…Herein, we unveil the deposition and etch mechanism of GeCl 4 on the SiGe surface. At the high temperature, GeCl 4 is dissociated to GeCl 2 and then worked as…”
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Conference Proceeding -
6
Investigation of 1T DRAM cell with non-overlap structure and recessed channel
Published in 2010 Silicon Nanoelectronics Workshop (01-06-2010)“…In this paper, a capacitor-less 1T DRAM cell transistor with non-overlap structure and recessed channel is presented. Because of the non-overlap structure…”
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Conference Proceeding -
7
Origin of surface potential change during ferroelectric switchingin epitaxial PbTiO 3 thin films studied by scanning force microscopy
Published in Applied physics letters (23-01-2009)“…We investigated the surface potential of the ferroelectric domains of the epitaxial PbTiO 3 (PTO) films using both Kelvin probe and piezoresponse force…”
Get full text
Journal Article -
8
High-Resolution Field Effect Sensing of Ferroelectric Charges
Published in Nano letters (01-01-2011)“…Nanoscale manipulation of surface charges and their imaging are essential for understanding local electronic behaviors of polar materials and advanced…”
Get full text
Journal Article -
9
Characterization of Sensitivity and Resolution of Silicon Resistive Probe
Published in Japanese Journal of Applied Physics (01-03-2008)Get full text
Journal Article -
10
Multi-domain process modeling for advanced logic and memory devices: from equimpments to materials
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01-12-2018)“…For modern semiconductor devices, the level of details which we should investigate for predictive simulation is going extreme. Not only the atomistic…”
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Conference Proceeding -
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Design Optimization of Scanning Resistive Microscopy (SRM) Probe for Spatial Resolution Improvement
Published in 2006 5th IEEE Conference on Sensors (01-10-2006)“…We suggest a new design of resistive probe (RP) for spatial resolution improvement by Si tip shape control. The major change of the new design is wedge-like…”
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Conference Proceeding -
12
Analysis and modeling of resistive probes
Published in 2006 IEEE Nanotechnology Materials and Devices Conference (01-10-2006)“…A simple model of the resistive probe was proposed for the first time to enhance its sensitivity. The model classifies output current into three components:…”
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Conference Proceeding