Search Results - "Ko, Hyoungsoo"

  • Showing 1 - 12 results of 12
Refine Results
  1. 1

    Origin of surface potential change during ferroelectric switching in epitaxial PbTiO3 thin films studied by scanning force microscopy by Kim, Yunseok, Bae, Changdeuck, Ryu, Kyunghee, Ko, Hyoungsoo, Kim, Yong Kwan, Hong, Seungbum, Shin, Hyunjung

    Published in Applied physics letters (19-01-2009)
    “…We investigated the surface potential of the ferroelectric domains of the epitaxial PbTiO3 (PTO) films using both Kelvin probe and piezoresponse force…”
    Get full text
    Journal Article
  2. 2

    High-Resolution Field Effect Sensing of Ferroelectric Charges by Ko, Hyoungsoo, Ryu, Kyunghee, Park, Hongsik, Park, Chulmin, Jeon, Daeyoung, Kim, Yong Kwan, Jung, Juhwan, Min, Dong-Ki, Kim, Yunseok, Lee, Ho Nyung, Park, Yoondong, Shin, Hyunjung, Hong, Seungbum

    Published in Nano letters (13-04-2011)
    “…Nanoscale manipulation of surface charges and their imaging are essential for understanding local electronic behaviors of polar materials and advanced…”
    Get full text
    Journal Article
  3. 3

    Multi-layered Vertical Gate NAND Flash overcoming stacking limit for terabit density storage by Wonjoo Kim, Sangmoo Choi, Junghun Sung, Taehee Lee, Chulmin Park, Hyoungsoo Ko, Juhwan Jung, Inkyong Yoo, Yoondong Park

    Published in 2009 Symposium on VLSI Technology (01-06-2009)
    “…Vertical Gate NAND (VG-NAND) Flash array with multi-active layers has been successfully integrated for the first time. VG-NAND confirmed stable operations of…”
    Get full text
    Conference Proceeding
  4. 4

    Interdigitated LDMOS by Jaejune Jang, Kyu-Heon Cho, Dongeun Jang, Minhwan Kim, Changjoon Yoon, Junsung Park, Hyunsil Oh, Chiho Kim, Hyoungsoo Ko, Keunho Lee, Sangbae Yi

    “…Novel Interdigitated LDMOS is experimented resulting in best in class R SP -BV DSS performance (21.8mΩ-mm 2 with BV DSS of 47V) in comparison to published…”
    Get full text
    Conference Proceeding
  5. 5

    Mechanism Investigation of Temperature Dependent Growth and Etching Process of GeCl4 on SiGe Surface: ab-initio Study by Park, Ji Young, Kim, Gyeom, Kim, Jin Bum, Lee, Sang-Moon, Kim, Sae-jin, Ko, Hyoungsoo, Lee, Seungmin, Lee, Seung Hun, Jang, Inkook, Kim, Dae Sin

    “…Herein, we unveil the deposition and etch mechanism of GeCl 4 on the SiGe surface. At the high temperature, GeCl 4 is dissociated to GeCl 2 and then worked as…”
    Get full text
    Conference Proceeding
  6. 6

    Investigation of 1T DRAM cell with non-overlap structure and recessed channel by Sang Wan Kim, Garam Kim, Wonjoo Kim, Hyoungsoo Ko, Byung-Gook Park

    Published in 2010 Silicon Nanoelectronics Workshop (01-06-2010)
    “…In this paper, a capacitor-less 1T DRAM cell transistor with non-overlap structure and recessed channel is presented. Because of the non-overlap structure…”
    Get full text
    Conference Proceeding
  7. 7

    Origin of surface potential change during ferroelectric switchingin epitaxial PbTiO 3 thin films studied by scanning force microscopy by Kim, Yunseok, Bae, Changdeuck, Ryu, Kyunghee, Ko, Hyoungsoo, Kim, Yong Kwan, Hong, Seungbum, Shin, Hyunjung

    Published in Applied physics letters (23-01-2009)
    “…We investigated the surface potential of the ferroelectric domains of the epitaxial PbTiO 3 (PTO) films using both Kelvin probe and piezoresponse force…”
    Get full text
    Journal Article
  8. 8

    High-Resolution Field Effect Sensing of Ferroelectric Charges by Ko, Hyoungsoo, Ryu, Kyunghee, Park, Hongsik, Park, Chulmin, Jeon, Daeyoung, Kim, Yong Kwan, Jung, Juhwan, Min, Dong-Ki, Kim, Yunseok, Lee, Ho Nyung, Park, Yoondong, Shin, Hyunjung, Hong, Seungbum

    Published in Nano letters (01-01-2011)
    “…Nanoscale manipulation of surface charges and their imaging are essential for understanding local electronic behaviors of polar materials and advanced…”
    Get full text
    Journal Article
  9. 9
  10. 10

    Multi-domain process modeling for advanced logic and memory devices: from equimpments to materials by Jang, Inkook, Ko, Hyoungsoo, Schmidt, Alexander, Kim, Sae-Jin, Cha, Moonhyun, Ahn, Hyoshin, Park, Honglae, Kim, Dae Sin, Kang, Ho-Kyu

    “…For modern semiconductor devices, the level of details which we should investigate for predictive simulation is going extreme. Not only the atomistic…”
    Get full text
    Conference Proceeding
  11. 11

    Design Optimization of Scanning Resistive Microscopy (SRM) Probe for Spatial Resolution Improvement by Hvoungsoo Ko, Hong, S., Park, H., Park, C., Jung, J., Min, D.-K., Choa, S.H., Shin, H., Lee, H.

    Published in 2006 5th IEEE Conference on Sensors (01-10-2006)
    “…We suggest a new design of resistive probe (RP) for spatial resolution improvement by Si tip shape control. The major change of the new design is wedge-like…”
    Get full text
    Conference Proceeding
  12. 12

    Analysis and modeling of resistive probes by Kim, Sang Wan, Choa, Sung-Hoon, Lee, Jong Duk, Shin, Hyungcheol, Park, Byung-Gook, Choi, Woo Young, Song, Jae Young, Kim, Jong Pil, Kim, Junsoo, Ko, Hyoungsoo, Park, Hongsik, Park, Chulmin, Hong, Seungbum

    “…A simple model of the resistive probe was proposed for the first time to enhance its sensitivity. The model classifies output current into three components:…”
    Get full text
    Conference Proceeding