Search Results - "Knopfmacher, O."

Nernst Limit in Dual-Gated Si-Nanowire FET Sensors by Knopfmacher, O, Tarasov, A, Fu, Wangyang, Wipf, M, Niesen, B, Calame, M, Schönenberger, C

“…Field effect transistors (FETs) are widely used for the label-free detection of analytes in chemical and biological experiments. Here we demonstrate that the…”
Get full text

Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors by Tarasov, A., Fu, W., Knopfmacher, O., Brunner, J., Calame, M., Schönenberger, C.

“…Recent studies on nanoscale field-effect sensors reveal the crucial importance of the low-frequency noise for determining the ultimate detection limit. In this…”
Get full text

True Reference Nanosensor Realized with Silicon Nanowires by Tarasov, A, Wipf, M, Bedner, K, Kurz, J, Fu, W, Guzenko, V. A, Knopfmacher, O, Stoop, R. L, Calame, M, Schönenberger, C

“…Conventional gate oxide layers (e.g., SiO2, Al2O3, or HfO2) in silicon field-effect transistors (FETs) provide highly active surfaces, which can be exploited…”
Get full text

Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors by Tarasov, A, Fu, W, Knopfmacher, O, Brunner, J, Calame, M, Schönenberger, C

“…Appl. Phys. Lett. 98, 012114 (2011) Recent studies on nanoscale field-effect sensors reveal the crucial importance of the low frequency noise for determining…”
Get full text

Sensing with liquid-gated graphene field-effect transistors by Wangyang Fu, Nef, C., Tarasov, A., Wipf, M., Stoop, R., Knopfmacher, O., Weiss, M., Calame, M., Schonenberger, C.

“…Liquid-gated graphene field-effect transistors (GFETs) with reliable performance are developed. It is revealed that ideal defect-free graphene should be inert…”
Get full text