Search Results - "Knoops, H. C. M"
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Corrigendum #2 to “Expanding Thermal Plasma Chemical Vapour Deposition of ZnO:Al Layers for CIGS Solar Cells”
Published in International journal of photoenergy (01-01-2020)“…In the article titled “Expanding Thermal Plasma Chemical Vapour Deposition of ZnO:Al Layers for CIGS Solar Cells” [1], there was an error in the references…”
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Expanding Thermal Plasma Chemical Vapour Deposition of ZnO:Al Layers for CIGS Solar Cells
Published in International journal of photoenergy (01-01-2014)“…Aluminium-doped zinc oxide (ZnO:Al) grown by expanding thermal plasma chemical vapour deposition (ETP-CVD) has demonstrated excellent electrical and optical…”
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Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate
Published in Applied physics letters (20-07-2020)“…This work provides evidence that plasma-assisted atomic layer deposition (ALD) of SiO2, a widely applied process and a cornerstone in self-aligned multiple…”
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Enhanced Doping Efficiency of Al-Doped ZnO by Atomic Layer Deposition Using Dimethylaluminum Isopropoxide as an Alternative Aluminum Precursor
Published in Chemistry of materials (26-11-2013)“…Atomic layer deposition offers the unique opportunity to control, at the atomic level, the 3D distribution of dopants in highly uniform and conformal thin…”
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Corrigendum to “Expanding Thermal Plasma Chemical Vapour Deposition of ZnO:Al Layers for CIGS Solar Cells”
Published in International journal of photoenergy (01-01-2015)“…In the paper titled “Expanding Thermal Plasma Chemical Vapour Deposition of ZnO:Al Layers for CIGS Solar Cells,” in the third paragraph in Experimental, some…”
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Surface reactions during atomic layer deposition of Pt derived from gas phase infrared spectroscopy
Published in Applied physics letters (06-07-2009)“…Infrared spectroscopy was used to obtain absolute number information on the reaction products during atomic layer deposition of Pt from…”
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Co3O4 as anode material for thin film micro-batteries prepared by remote plasma atomic layer deposition
Published in Journal of power sources (01-04-2012)“…Cobalt oxide thin films have been deposited with remote plasma atomic layer deposition (ALD) within a wide temperature window (100-400 degree C), using CoCp2…”
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Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-01-2010)“…In this note it is demonstrated that optical emission spectroscopy (OES) is an easy-to-implement and valuable tool to study, optimize, and monitor thin film…”
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Atomic layer deposition for nanostructured Li-ion batteries
Published in Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (01-01-2012)“…Nanostructuring is targeted as a solution to achieve the improvements required for implementing Li-ion batteries in a wide range of applications. These…”
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Book Review Journal Article -
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Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
Published in Applied physics letters (11-09-2017)“…Metal fluorides typically have a low refractive index and a very high transparency and find many applications in optical and optoelectronic devices. Nearly…”
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“Zero-charge” SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
Published in Solar energy materials and solar cells (01-12-2015)“…To achieve high conversion efficiencies, advanced silicon solar cell architectures such as interdigitated back contact solar cells demand that defects at both…”
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Reaction mechanisms of atomic layer deposition of TaN x from Ta(NMe 2 ) 5 precursor and H 2 -based plasmas
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-01-2012)“…The reaction mechanisms of plasma-assisted atomic layer deposition (ALD) of TaN x using Ta(NMe 2 ) 5 were studied using quadrupole mass spectrometry (QMS). The…”
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Reaction mechanisms of atomic layer deposition of TaN x from Ta(NMe2)5 precursor and H2-based plasmas
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-01-2012)“…The reaction mechanisms of plasma-assisted atomic layer deposition (ALD) of TaNx using Ta(NMe2)5 were studied using quadrupole mass spectrometry (QMS). The…”
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14
Surface reactions during atomic layer deposition of Pt derivedfrom gas phase infrared spectroscopy
Published in Applied physics letters (10-07-2009)“…Infrared spectroscopy was used to obtain absolute number information on the reaction products during atomic layer deposition of Pt from…”
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15
Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01-11-2011)“…One of the critical steps toward producing void-free and uniform bottom-up copper electroplating in high aspect-ratio (AR) through-silicon vias (TSVs) is the…”
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