Search Results - "Knoll, M.G."

Protonic nonvolatile field effect transistor memories in Si/SiO/sub 2//Si structures by Warren, W.L., Fleetwood, D.M., Schwank, J.R., Shaneyfelt, M.R., Draper, B.L., Winokur, P.S., Knoll, M.G., Vanheusden, K., Devine, R.A.B., Archer, L.B., Wallace, R.M.

“…A low-voltage, radiation-tolerant, nonvolatile field effect transistor (NVFET) memory involving proton motion in SiO/sub 2/ is illustrated in both bulk Si and…”
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Hardness variability in commercial technologies by Shaneyfelt, M.R., Winokur, P.S., Meisenheimer, T.L., Sexton, F.W., Roeske, S.B., Knoll, M.G.

“…The radiation hardness of commercial floating gate 256 K E/sup 2/PROMs from a single diffusion lot was observed to vary between 5 to 25 krad(Si) when…”
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Ferroelectric-CMOS Nonvolatile Memory Development by Nasby, R.D., McWhorter, P.J., Knoll, M.G.

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Nonvolatile memory based on mobile protons by Fleetwood, D.M., Warren, W.L., Vanheusden, K., Devine, R.A.B., Shaneyfelt, M.R., Draper, B.L., Schwank, J.R., Meisenheimer, T.L., Winokur, P.S., Knoll, M.G.

“…We have found that mobile protons can be introduced into the gate or buried oxide layer(s) of Si-SiO/sub 2/-Si structures with high O vacancy densities via…”
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2k nonvolatile shadow RAM and 256k EEPROM SONOS nonvolatile memory development by Nasby, R.D., Murray, J.R., Habermehl, S.D., Bennett, R.S., Tafoya-Porras, B.C., Mahl, P.R., Rodriguez, J.L., Jones, R.V., Knoll, M.G.

“…This paper describes SONOS nonvolatile memory development at Sandia National Laboratories. A 256 kbit EEPROM nonvolatile memory and a 2 kbit nonvolatile shadow…”
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