Search Results - "Knights, A.P."

The evolution of silicon photonics as an enabling technology for optical interconnection by Doylend, J.K., Knights, A.P.

“…Silicon photonics defines a significant advancement in the development of highly integrated devices on a single semiconductor substrate. As a revolutionizing…”
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Modeling Defect Enhanced Detection at 1550 nm in Integrated Silicon Waveguide Photodetectors by Logan, D.F., Jessop, P.E., Knights, A.P.

“…Recent attention has been attracted by photo-detectors integrated onto silicon-on-insulator (SOI) waveguides that exploit the enhanced sensitivity to…”
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Thermal evolution of defects produced by implantation of H, D and He in Silicon by Simpson, P.J., Knights, A.P., Chicoine, M., Dudeck, K., Moutanabbir, O., Ruffell, S., Schiettekatte, F., Terreault, B.

“…Despite decades of study, voids in silicon produced by implantation of H or He followed by annealing continue to be a topic of interest. There are two key…”
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Using } Carrier Confinement in Total Internal Reflection Optical Switches to Restrict Carrier Diffusion in the Guiding Layer by Thomson, D., Gardes, F.Y., Mashanovich, G.Z., Knights, A.P., Reed, G.T.

“…Total internal reflection optical switches structures are well known. However, previously reported switches based upon carrier injection have suffered from the…”
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Enhancement of depth sensitivity in slow positron implantation spectroscopy of Si by Coleman, P.G, Knights, A.P

“…Information gained by non-destructive slow positron implantation spectroscopy on the depth distribution of open-volume defects created by ion implantation in…”
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GaAs quantum wire lasers grown on v-grooved substrates isolated by self-aligned ion implantation by Percival, C., Houston, P.A., Woodhead, J., Al-Khafaji, M., Hill, G., Roberts, J.S., Knights, A.P.

“…Multiple vertically stacked GaAs/Al/sub x/Ga/sub 1-x/As quantum wires laser diodes have been fabricated via MOVPE on v-grooved GaAs substrates. The devices are…”
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Indium as a p-type dopant of thin film silicon solar cells by Paez, D.J., Huante-Ceron, E., Knights, A.P.

“…The effect of using indium, a deep-level acceptor in silicon, as a dopant for an ultra-thin film (2.5μm thick) single-crystalline silicon solar cell has been…”
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Development of a novel tool for semiconductor process control by Gwilliam, R.M., Knights, A.P., Wendler, E, Sealy, B.J., Burrows, C.P., Coleman, P.G.

“…A collaborative project between the Surrey Ion Beam Centre and the positron beam group at the University of Bath is developing a bench-top positron tool…”
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The study of lattice damage using slow positrons following low energy B + implantation of silicon by Gwilliam, R.M, Knights, A.P, Nejim, A, Sealy, B.J, Burrows, C.P, Malik, F, Coleman, P.G

“…The drive beyond sub-250 nm device structures requires a concomitant reduction in ion implantation energies to below keV. Such low energies are presenting new…”
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The effect of thermalisation length and work function on epithermal positron emission from solids by Knights, A.P., Coleman, P.G.

“…Measurements have been made of the yield of slow positrons from Ag(100), polycrystalline Au, Pb and Sn, and 8 Å, SiO 2 Si . The measured dependence of the…”
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Near-surface lateral vacancy migration in O +-implanted SiC studied by positron re-emission microscopy by Burrows, C.P, Knights, A.P, Coleman, P.G

“…The areal distribution of near-surface defects created by the implantation of O + ions into 6H–SiC through chemically-deposited masks has been studied by…”
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Size limit on the phosphorous doped silicon nanocrystals for dopant activation by Yang, P., Gwilliam, R.M., Crowe, I.F., Papachristodoulou, N., Halsall, M.P., Hylton, N.P., Hulko, O., Knights, A.P., Shah, M., Kenyon, A.J.

“…We studied the photoluminescence spectra of silicon nanocrystals doped with and without phosphorus as a function of isothermal annealing time. Silicon…”
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Design and Simulation of an Integrated Fiber-to-Chip Coupler for Silicon-on-Insulator Waveguides by Doylend, J.K., Knights, A.P.

“…We report a novel design for a monolithically integrated fiber to silicon-on-insulator (SOI) waveguide coupler. The structure consists of a relatively large…”
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Modification of silicon waveguide structures using ion implantation induced defects by Knights, A.P., Dudeck, K.J., Walters, W.D., Coleman, P.G.

“…The structure of re-crystallized silicon films is investigated using transmission electron microscopy, spectroscopic ellipsometry and positron annihilation…”
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Light emission from Si nanoclusters formed at low temperatures by Pi, X. D., Zalloum, O. H. Y., Roschuk, T., Wojcik, J., Knights, A. P., Mascher, P., Simpson, P. J.

“…Photoluminescence (PL) from amorphous Si nanoclusters (Si-ncls) formed by thin-film deposition via electron-cyclotron resonance plasma-enhanced chemical vapor…”
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Impact of growth conditions on vacancy-type defects in silicon-germanium structures grown by molecular-beam epitaxy by Shoukri, Kareem M., Haddara, Yaser M., Knights, A. P., Coleman, P. G.

“…Silicon-germanium layers of either 200 nm or 250 nm have been grown via molecular-beam epitaxy (MBE) on p -type (001) silicon substrates. Each sample was…”
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The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides by Logan, D.F., Jessop, P.E., Knights, A.P., Gwilliam, R.M., Halsall, M.P.

“…The influence of the charge state of ion implantation induced defects in SOI waveguides on the absorption of sub-bandgap wavelengths is described. It is found…”
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1.5 μm electroluminescence from organic light emitting diodes integrated on silicon substrates by Curry, R.J., Gillin, W.P., Knights, A.P., Gwilliam, R.

“…We have produced a silicon based organic light emitting diode (OLED) which emits 1.5 μm electroluminescence at room temperature. The emitting layer used was…”
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Characterisation of a coplanar CVD diamond radiation detector by Galbiati, A., Breese, M.B.H., Knights, A.P., Sealy, B., Sellin, P.J.

“…Studies have been made of the performance of polycrystalline CVD diamond for use as a radiation detector in high temperature or high radiation environments. In…”
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Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation by Morrison, D.J, Wright, N.G, Horsfall, A.B, Johnson, C.M, O’Neill, A.G, Knights, A.P, Hilton, K.P, Uren, M.J

“…The effects of post-implantation annealing on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned Ar + ion…”
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