Search Results - "Klunngien, N."

Very low drift and high sensitivity of nanocrystal-TiO2 sensing membrane on pH-ISFET fabricated by CMOS compatible process by Bunjongpru, W., Sungthong, A., Porntheeraphat, S., Rayanasukha, Y., Pankiew, A., Jeamsaksiri, W., Srisuwan, A., Chaisriratanakul, W., Chaowicharat, E., Klunngien, N., Hruanun, C., Poyai, A., Nukeaw, J.

“…► We can fabricate sensing membrane layer from TiN with low drift rate. ► The EIS device incorporating TiN film annealed at 850°C exhibited a highest…”
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High-dielectric constant AlON prepared by RF gas-timing sputtering for high capacitance density by Poyai, A., Bunjongpru, W., Klunngien, N., Porntheerapat, S., Hruanan, C., Sopitpan, S., Nukeaw, J.

“…This paper presents the method to prepare and characterize high-dielectric constant aluminum oxynitride (AlON) formed by RF gas-timing sputtering. AlON layers…”
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High-dielectric constant AION prepared by RF gas-timing sputtering for high capacitance density by POYAI, A, BUNJONGPRU, W, KLUNNGIEN, N, PORNTHEERAPAT, S, HRUANAN, C, SOPITPAN, S, NUKEAW, J

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Temperature dependence of electrical characteristics on pn junction power diodes irradiated by X-ray by Sundarasaradula, Y., Sodhgam, P., Amporn, Poyai, Klunngien, N., Titiroongruang, W.

“…The purpose of this work is to study the effect of X-ray irradiation on pn junction power diode. The diodes were designed and fabricated using standard CMOS…”
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Comparison of Conventional and LDD NMOSFETs Hot-Carrier Degradation in 0.8 μm CMOS Technology by Phongphanchantra, N., Ruangphanit, A., Klunngien, N., Yamwong, W., Niemcharoen, S.

“…Hot-carrier degradation phenomena in n-channel MOSFETs (NMOSFETs) through the comparison between conventional and lightly doped drain (LDD) structure of…”
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Effect of cobalt silicide to the sentivity of p-n junction temperature sensor by Poyai, A., Ratanaudomphisut, E., Supadech, J., Klunngien, N., Hruanan, C., Sopitpan, S.

“…This paper describes the impact of thickness of cobalt silicide to the sentivity of p-n junction temperature sensor. The starting cobalt thickness of 12, 20…”
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The effects of fluorine ion implantation on acrylic resin denture base by Piyananjaratsri, R., Chaowicharat, E., Saejok, K., Susen, W., Pankiew, A., Srisuwan, A., Jeamsaksiri, W., Klunngien, N., Hruanun, C., Poyai, A.

“…Acrylic resin denture base, with fluorine ion implantation at different doses, were compared with reference specimens without ion implantation. The specimens…”
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Effect of Base Width and Implantation Dose on Performance of 3-Terminal Magnetotransistor by Woradet, J., Phetchakul, T., Chareankid, S., Pengchan, W., Klunngien, N., Hruanun, C., Poyai, A.

“…This paper presents the effect of base width and implantation dose on electrical carriers in the magnetotransistor deflected by the Lorentz force (FL) from…”
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