Search Results - "Klochkov, A N"

Silicon-Doped Epitaxial Films Grown on GaAs(110) Substrates: the Surface Morphology, Electrical Characteristics, and Photoluminescence Spectra by Galiev, G. B., Klimov, E. A., Pushkarev, S. S., Zaytsev, A. A., Klochkov, A. N.

“…The results of studies of the surface morphology, electrical characteristics, and photoluminescence properties of epitaxial GaAs films grown by molecular-beam…”
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Effect of a Built-in Electric Field on the Photoluminescence Spectra of Elastically Strained InGaAs/GaAs Superlattices on GaAs (110) and (111)A Substrates by Klimov, E A, Pushkarev, S S, Klochkov, A N

“…The manifestation of the piezoelectric effect in the photoluminescence spectra of superlattices with elastically strained {InxGa1 – xAs/GaAs} quantum wells…”
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Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates by Klimov, E. A., Pushkarev, S. S., Klochkov, A. N., Mozhaeva, M. O.

“…The production of superlattices with pseudomorphically strained quantum wells (QWs) {In x Ga 1– x As/GaAs} grown by molecular beam epitaxy on GaAs substrates…”
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Generation of THz Radiation by (100), (110), and (111)A-Oriented Multiple Pseudomorphic InGaAs/GaAs Quantum Wells and Photoconductive Antennas by Klimov, E. A., Klochkov, A. N., Solyankin, P. M., Sin’ko, A. S., Pavlov, A. Yu, Lavrukhin, D. V., Pushkarev, S. S.

“…We report the effect of the built-in electric field emerging in elastically strained multiple InGaAs/GaAs quantum wells on the THz generation efficiency upon…”
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Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier by Gusev, A. S., Sultanov, A. O., Katkov, A. V., Ryndya, S. M., Siglovaya, N. V., Klochkov, A. N., Ryzhuk, R. V., Kargin, N. I., Borisenko, D. P.

“…Using the method of molecular beam epitaxy with the plasma activation of nitrogen, experimental AlN/GaN heterostructures (HSs) with an ultrathin AlN barrier…”
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X-ray Diffraction Analysis of the Structure In0.53Ga0.47As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer by Folomeshkin, M. S., Volkovsky, Yu. A., Prosekov, P. A., Galiev, G. B., Klimov, E. A., Klochkov, A. N., Pushkarev, S. S., Seregin, A. Yu, Pisarevsky, Yu. V., Blagov, A. E., Kovalchuk, M. V.

“…Epitaxial In 0.53 Ga 0.47 As films, grown on GaAs substrates with the (100) and (111) А crystallographic orientations in the standard high-temperature and…”
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Study of the Surface Morphology, Electrophysical Characteristics, and Photoluminescence Spectra of GaAs Epitaxial Films on GaAs(110) Substrates by Galiev, G. B., Klimov, E. A., Zaitsev, A. A., Pushkarev, S. S., Klochkov, A. N.

“…The electrophysical and phosphorescence characteristics, as well as the surface morphology, of GaAs films grown by molecular beam epitaxy on GaAs substrates…”
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Structural Properties of {LTG-GaAs/GaAs:Si} Superlattices on GaAs(100) and (111)A Substrates by Galiev, G B, Klimov, E A, Pushkarev, S S, Saraykin, V V, Vasil’evskii I S, Vinichenko, A N, Grekhov, M M, Klochkov, A N

“…A new structure for photoconductive antennas is proposed, which represents a multilayer epitaxial film grown on a GaAs(111)A substrate and consisting of…”
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THz Radiation of Photoconductive Antennas based on {LT-GaAa/GaAa:Si} Superlattice Structures by Klochkov, A. N., Klimov, E. A., Solyankin, P. M., Konnikova, M. R., Vasil’evskii, I. S., Vinichenko, A. N., Shkurinov, A. P., Galiev, G. B.

“…A material in the form of a multilayer structure based on low-temperature LT-GaAs grown on (111)A-oriented substrates is proposed for fabrication of THz…”
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3.3 THz Quantum Cascade Laser Based on a Three GaAs/AlGaAs Quantum-Well Active Module with an Operating Temperature above 120 K by Khabibullin, R. A., Maremyanin, K. V., Ponomarev, D. S., Galiev, R. R., Zaycev, A. A., Danilov, A. I., Vasil’evskii, I. S., Vinichenko, A. N., Klochkov, A. N., Afonenko, A. A., Ushakov, D. V., Morozov, S. V., Gavrilenko, V. I.

“…— The design of a terahertz (THz) quantum cascade laser (QCL) with an active module based on three GaAs/Al 0.18 Ga 0.82 As quantum wells for high-temperature…”
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Electrical and Photoluminescence Studies of {LT-GaAs/GaAs:Si} Superlattices Grown by MBE on (100)- and (111)A-Oriented GaAs Substrates by Galiev, G. B., Klimov, E. A., Klochkov, A. N., Kopylov, V. B., Pushkarev, S. S.

“…The results of studying semiconductor structures proposed for the first time and grown, which combine the properties of LT-GaAs with p -type conductivity upon…”
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Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures by Galiev, G. B., Klimov, E. A., Klochkov, A. N., Pushkarev, S. S., Maltsev, P. P.

“…The electrical properties and photoluminescence features of uniformly Si-doped GaAs layers grown on GaAs substrates with the (100) and (111)A crystallographic…”
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Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates by Galiev, G. B., Vasiliev, A. L., Vasil’evskii, I. S., Vinichenko, A. N., Klimov, E. A., Klochkov, A. N., Trunkin, I. N., Pushkarev, S. S.

“…The structural characteristics of {InGaAs/InAlAs} superlattices, grown by molecular-beam epitaxy (MBE) at a temperature of 200°C on InP substrates with the…”
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New Structure for Photoconductive Antennas Based on {LTG-GaAs/GaAs:Si} Superlattice on GaAs(111)A Substrate by Galiev, G. B., Trunkin, I. N., Vasiliev, A. L., Vasil’evskii, I. S., Vinichenko, A. N., Klimov, E. A., Klochkov, A. N., Maltsev, P. P., Pushkarev, S. S.

“…The structural characteristics of a new structure for photoconductive antennas have been investigated. This structure is a multilayered epitaxial film grown on…”
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Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation by Ponomarev, D. S., Khabibullin, R. A., Klochkov, A. N., Yachmenev, A. E., Bugaev, A. S., Khusyainov, D. I., Buriakov, A. M., Bilyk, V. P., Mishina, E. D.

“…The results of experimental studies of the time dynamics of photoexcited charge carriers in In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As superlattices grown by…”
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Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates by Galiev, G. B., Grekhov, M. M., Kitaeva, G. Kh, Klimov, E. A., Klochkov, A. N., Kolentsova, O. S., Kornienko, V. V., Kuznetsov, K. A., Maltsev, P. P., Pushkarev, S. S.

“…The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In 0.53 Ga 0.47 As epitaxial films under femtosecond laser…”
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Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme by Khabibullin, R. A., Shchavruk, N. V., Klochkov, A. N., Glinskiy, I. A., Zenchenko, N. V., Ponomarev, D. S., Maltsev, P. P., Zaycev, A. A., Zubov, F. I., Zhukov, A. E., Cirlin, G. E., Alferov, Zh. I.

“…The dependences of the electronic-level positions and transition oscillator strengths on an applied electric field are studied for a terahertz quantum-cascade…”
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Effect of (100) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs by Galiev, G.B., Vasil'evskii, I.S., Klimov, E.А., Pushkarev, S.S., Klochkov, A.N., Maltsev, P.P, Presniakov, M.Yu, Trunkin, I.N., Vasiliev, A.L.

“…The effect of GaAs (100) substrate misorientation on metamorphic high electron mobility transistor nanoheterostructure In0.64Al0.3As/In0.7Ga0.3As properties…”
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Epitaxial low-temperature growth of In0.5Ga0.5As films on GaAs(100) and GaAs(111)A substrates using a metamorphic buffer by Galiev, G. B., Trunkin, I. N., Klimov, E. A., Klochkov, A. N., Vasiliev, A. L., Imamov, R. M., Pushkarev, S. S., Maltsev, P. P.

“…A complex investigation of epitaxial In 0.5 Ga 0.5 As films grown on GaAs substrates with crystallographic orientations of (100) and (111) A in the standard…”
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Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates by Galiev, G. B., Klochkov, A. N., Vasil’evskii, I. S., Klimov, E. A., Pushkarev, S. S., Vinichenko, A. N., Khabibullin, R. A., Maltsev, P. P.

“…The electron-transport and optical properties of heterostructures with a surface InGaAs/InAlAs quantum well in the cases of inverted δ doping with Si atoms…”
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