Search Results - "Klitzing, Klaus v"
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Graphene on a Hydrophobic Substrate: Doping Reduction and Hysteresis Suppression under Ambient Conditions
Published in Nano letters (14-04-2010)“…The intrinsic doping level of graphene prepared by mechanical exfoliation and standard lithography procedures on thermally oxidized silicon varies…”
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A quantum dot in the limit of strong coupling to reservoirs
Published in Physica. B, Condensed matter (01-12-1998)“…We study quantum dots which are defined in a two-dimensional electron system (2DES) via split gates and concentrate on the case where the dots are strongly…”
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Excitonic Fano Resonance in Free-Standing Graphene
Published in Nano letters (09-03-2011)“…We investigate the role of electron−hole correlations in the absorption of free-standing monolayer and bilayer graphene using optical transmission spectroscopy…”
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4
Tunability of the Kondo effect in an asymmetrically tunnel coupled quantum dot
Published in The European physical journal. B, Condensed matter physics (01-06-2006)Get full text
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5
Excitonic Fano Resonance in Freestanding Graphene
Published 06-01-2011“…We investigate the role of electron-hole correlations in the absorption of freestanding monolayer and bilayer graphene using optical transmission spectroscopy…”
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Physics and application of the quantum Hall effect
Published in Physica. B, Condensed matter (1995)“…The High Magnetic Field Laboratory in Grenoble is the birthplace of the quantum Hall effect (QHE). In the morning of the 5th of February 1980 — during a…”
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Four-terminal magneto-transport in graphene p-n junctions created by spatially selective doping
Published 31-03-2009“…Nano Letters 9, 1973 (2009) In this paper we describe a graphene p-n junction created by chemical doping. We find that chemical doping does not reduce mobility…”
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8
Graphene on a hydrophobic substrate: Doping reduction and hysteresis suppression under ambient conditions
Published 14-10-2009“…The intrinsic doping level of graphene prepared by mechanical exfoliation and standard lithography procedures on thermally oxidized silicon varies…”
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Sequential resonant tunneling of holes in GaAs-AlAs superlattices
Published in Physical review. B, Condensed matter (15-11-1989)Get full text
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