Search Results - "Kliefoth, K"

Interface recombination in heterojunctions of amorphous and crystalline silicon by Froitzheim, A, Brendel, K, Elstner, L, Fuhs, W, Kliefoth, K, Schmidt, M

“…Heterojunction solar cells consisting of an n-type a-Si:H(n) emitter and a p-type monocrystalline silicon wafer have been studied with particular emphasis on…”
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Preparation of H-terminated Si surfaces and their characterisation by measuring the surface state density by Angermann, H., Kliefoth, K., Flietner, H.

“…H-terminated n- and p-type Si(111) surfaces are characterised by the large-signal field-modulated photovoltage technique (SPV) measuring the surface potential…”
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Electronic properties of thin Au/nanoporous-Si/n-Si structures by Dittrich, Th, Kliefoth, K, Sieber, I, Rappich, J, Rauscher, S, Timoshenko, V.Yu

“…Ultrathin nanoporous Si layers (UPSL) were prepared on n-Si (100) by anodization in aqueous NH4F solution starting from an electrochemically hydrogenated…”
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Defect generation at silicon surfaces during etching and initial stage of oxidation by Angermann, H., Kliefoth, K., Füssel, W., Flietner, H.

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Voltage and current loss in semiconductor solar cells from MCV and simultaneous IV measurements by Sinh, Ngo Duong, Spieβ, F., Kliefoth, K., Füssel, W.

“…We present a method for determining the voltage and current loss in solar cells using the modulation capacitance voltage measuring technique. Both losses can…”
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Two types of traps at the Si/SiO2 interface characterized by their cross sections by ALBOHN, J, FÜSSEL, W, NGO DUONG SINH, KLIEFOTH, K, FLIETNER, H, FUHS, W

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Comparative assessment of dual-photon absorptiometry and dual-energy radiography by Glüer, C C, Steiger, P, Selvidge, R, Elliesen-Kliefoth, K, Hayashi, C, Genant, H K

“…Dual-energy bone densitometry can be performed with two types of scanners. The traditional dual-photon absorptiometry (DPA) machines use an isotope source,…”
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ZnO(CdS)/CIS/Mo solar cells characterized by modulation capacitance voltage measurements by Ngo Duong Sinh, Scheer, R., Kliefoth, K., Fussel, W., Fuhs, W.

“…From modulation capacitance voltage (MCV) measurements we determined a voltage V/sub s/ of several hundred mV at the depletion region in CuInS/sub 2/ under PV…”
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Two types of traps at the [formula omitted] interface characterized by their cross sections by Albohn, J., Füssel, W., Ngo Duong Sinh, Kliefoth, K., Flietner, H., Fuhs, W.

“…The dispersion behavior of traps at the Si SiO 2 interface has been investigated applying the modulation capacitance voltage method. N-type MOS samples of…”
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Two types of traps at the Si/SiO sub(2) interface characterized by their cross sections by Albohn, J, Fuessel, W, Sinh, Ngo Duong, Kliefoth, K, Flietner, H, Fuhs, W

“…The dispersion behavior of traps at the Si/SiO sub(2) interface has been investigated applying the modulation capacitance voltage method. N-type MOS samples of…”
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Interface recombination in heterojunctions of amorphous and crystalline silicon by FROITZHEIM, A, BRENDEL, K, ELSTNER, L, FUHS, W, KLIEFOTH, K, SCHMIDT, M

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Evolution of electronically active defects during the formation of [formula omitted] interface monitored by combined surface photovoltage and spectroscopic ellipsometry measurements by Angermann, H., Henrion, W., Rebien, M., Kliefoth, K., Fischer, D., Zettler, J.-T.

“…The evolution of dangling bond defects on initially H-terminated Si(111) surfaces was correlated to the wet-chemical oxide growth on an atomic scale. The…”
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Preparation of H-terminated Si surfaces and their characterisation by measuring the surface state density by ANGERMANN, H, KLIEFOTH, K, FLIETNER, H

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