Search Results - "Kleverman, M"
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Defect engineering in Czochralski silicon by electron irradiation at different temperatures
Published in E-MRS 2001 Spring Meeting Symposium B Defect Engineering of Advanced Semiconductor Devices,Strasbourg, France,2001-06-04 - 2001-06-08 (2002)“…Infrared absorption studies of defect formation in Czochralski silicon irradiated with fast electrons in a wide range of temperatures (80–900 K) have been…”
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Journal Article Conference Proceeding -
2
Electronic structure of the GaAs:Mn-Ga center
Published in Physical review. B, Condensed matter (1997)“…The excitation spectrum of the O.11-eV Mn acceptor in GaAs has been thoroughly investigated by uniaxial stress and Zeeman fourier transform infrared…”
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3
Optical properties of a silver-related defect in silicon
Published in Physical review. B, Condensed matter and materials physics (27-06-2003)“…Doping crystalline silicon with silver results in a photoluminescence center with multiplet zero-phonon structure near 778.9 meV. We show that the published…”
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Interaction between self-interstitials and the oxygen dimer in silicon
Published in Physica. B, Condensed matter (01-12-2001)“…Interactions between the oxygen dimer (O 2i) and silicon self-interstitials (I) and vacancies (V) have been studied in Czochralski-grown silicon (Cz–Si)…”
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5
Spectroscopic observation of the TDD0 in silicon
Published in Physica. B, Condensed matter (31-12-2003)“…The electronic transitions of 16 neutral thermal double donors (TDD1–TDD16) and of nine positively charged species (TDD1–TDD9) were observed previously in…”
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Cs–H2 defect in crystalline silicon
Published in Physica. B, Condensed matter (01-01-2001)Get full text
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7
Optical investigation of InAs/InP quantum dots at different temperatures and under electric field
Published in Thin solid films (27-03-2000)“…The electronic structure of InAs quantum dots in InP is fairly well known from theory as well as from experimental work using photocapacitance, DLTS and…”
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Conference Proceeding Journal Article -
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Early stages of oxygen clustering in hydrogenated Cz-Si: IR absorption studies
Published in Physica. B, Condensed matter (2001)“…The formation kinetics of small oxygen clusters in hydrogenated Si has been studied by means of infrared absorption measurements. Hydrogen was introduced into…”
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Journal Article Conference Proceeding -
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Complexes of the self-interstitial with oxygen in irradiated silicon:: a new assignment of the 936 cm −1 band
Published in Physica. B, Condensed matter (2001)“…Three vibrational infrared absorption bands at about 936, 944 and 956 cm −1 appear commonly in spectra of Czochralski-grown silicon irradiated at low…”
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Journal Article Conference Proceeding -
10
Structure of gold in silicon
Published in Physical review letters (26-08-1991)Get full text
Journal Article -
11
Effective-mass approximation for shallow donors in uniaxial indirect band-gap crystals and application to 4H-SiC
Published in Physical review. B, Condensed matter and materials physics (2006)“…The effective-mass theory is applied for description of the electronic states of shallow donors in indirect band-gap uniaxial crystals, which have three…”
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12
High-resolution absorption measurements in gold doped Si/Ge alloys
Published in Applied Physics A Solids and Surfaces (01-07-1991)Get full text
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13
Line spectrum of the interstitial iron donor in silicon
Published in Applied physics letters (19-12-1988)“…Photothermal ionization spectroscopy and infrared transmission measurements have been carried out on iron-doped silicon. A series of sharp lines in the range…”
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Identification of hole transitions at the neutral interstitial manganese center in silicon
Published in Applied physics letters (11-12-1989)“…The observation of a sharp line transmission spectrum in Mn-doped silicon is reported. Isochronal annealing behavior of both the line spectrum and the…”
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15
Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP
Published in Microelectronics (01-03-2005)“…In this work, we report on an overview of recent results from Fourier transform photocurrent (FTPC) measurements in the infrared spectral region on ensembles…”
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Electronic defect characterization in silicon
Published in Journal of electronic materials (01-08-1990)Get full text
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17
High-resolution spectroscopy of silver-doped silicon
Published in Physical review. B, Condensed matter (15-11-1988)Get full text
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18
Excited State Spectroscopy of Deep Defects in Silicon
Published in Physica scripta (01-01-1989)Get full text
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19
Evidence for a substitutional Mg acceptor level in silicon
Published in Physical review. B, Condensed matter (15-11-1988)Get full text
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20
Trigonal gold-pair center in silicon
Published in Physical review. B, Condensed matter (15-06-1994)Get full text
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