Electron emission from direct bandgap heterojunction capacitors

Electron emission from direct bandgap heterojunction capacitors

The rate of emission of electrons from an inversion layer at the interface between p-type GaAs and undoped Al/sub x/Ga/sub 1-x/As (x=0.38) is measured using a transient capacitance technique at temperatures from 49.8 to 84.4 K and at various gate biases. A model based on physical mechanisms is devel...

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 36; no. 2; pp. 289 - 299
Main Authors: Kleine, J.S., Qian, Q.D., Cooper, J.A., Melloch, M.R.
Format: Journal Article
Language:English
Published: New York, NY IEEE 01-02-1989
Institute of Electrical and Electronics Engineers
Subjects:
Applied sciences
Capacitance measurement
Capacitors
Compound structure devices
Effective mass
Electron emission
Electronics
Exact sciences and technology
Gallium arsenide
Heterojunctions
Material storage
Photonic band gap
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature
Tunneling
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Summary:The rate of emission of electrons from an inversion layer at the interface between p-type GaAs and undoped Al/sub x/Ga/sub 1-x/As (x=0.38) is measured using a transient capacitance technique at temperatures from 49.8 to 84.4 K and at various gate biases. A model based on physical mechanisms is developed that accurately describes the inversion charge leakage. The model parameters are adjusted within their limits of uncertainty to obtain the optimal fit of present theory to experiment. The fit results in estimation of delta E/sub c/=0.28 eV and tunneling effective mass m*=0.08 m/sup O/, for Al/sub 0.38/Ga/sub 0.62/As. The model is used to predict the storage characteristics of similar devices with lower GaAs doping and with an alternate barrier material.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.19928