Search Results - "Klehr, A."
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1
Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers
Published in IEEE photonics technology letters (01-05-2005)“…A novel process for the passivation of mirror facets of Al-free active-region high-power semiconductor diode lasers is presented. Designed for technological…”
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Journal Article -
2
High-power 980-nm DFB RW lasers with a narrow vertical far field
Published in IEEE photonics technology letters (15-03-2006)“…We compare 980-nm distributed-feedback ridge-waveguide lasers having cavity lengths of 1.5 and 3 mm. The maximum single-mode output powers are 500 and 700 mW,…”
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Journal Article -
3
High-Power 980-nm Broad-Area Lasers Spectrally Stabilized by Surface Bragg Gratings
Published in IEEE photonics technology letters (01-03-2010)“…We report on broad-area distributed Bragg reflector (DBR) lasers with a stripe width of 90 ¿m providing up to 14-W optical power and 50% maximum conversion…”
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Journal Article -
4
Generation of spectrally stable continuous-wave emission and ns pulses with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier
Published in Optics express (06-10-2014)“…We have developed a diode-laser based master oscillator power amplifier (MOPA) light source which emits high-power spectrally stabilized and nearly-diffraction…”
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Journal Article -
5
Dynamics of a gain-switched distributed feedback ridge waveguide laser in nanoseconds time scale under very high current injection conditions
Published in Optics express (11-02-2013)“…We present detailed experimental investigations of the temporal, spectral and spatial behavior of a gain-switched distributed feedback (DFB) laser emitting at…”
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Journal Article -
6
High power laser pulses with voltage controlled durations of 400 - 1000 ps
Published in Optics express (26-03-2012)“…We report on the generation and amplification of pulses with pulse widths of 400 - 1000 ps at 1064 nm. For pulse generation an ultra-fast semiconductor…”
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Journal Article -
7
Picosecond pulses with 50 W peak power and reduced ASE background from an all-semiconductor MOPA system
Published in Applied physics. B, Lasers and optics (01-06-2011)“…Using a single-stage all-semiconductor master oscillator-power amplifier system, consisting of a Q-switched distributed Bragg reflector laser as master…”
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Journal Article -
8
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications
Published in 2020 Device Research Conference (DRC) (01-06-2020)“…Vertical GaN based MISFETs for high voltage power switching applications have the potential to outperform Si and SiC based competitors in terms of power…”
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Conference Proceeding -
9
High-Power Monolithic Two-Mode DFB Laser Diodes for the Generation of THz Radiation
Published in IEEE journal of selected topics in quantum electronics (01-03-2008)“…We have devolved 1064 nm high-power monolithic distributed feedback lasers which operate simultaneously on two longitudinal modes. These modes correspond to…”
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Journal Article -
10
Numerical simulation of the amplification of picosecond laser pulses in tapered semiconductor amplifiers and comparison with experimental results
Published in Optics communications (01-06-2012)“…We apply a traveling wave model to the simulation of the amplification of laser pulses generated by Q-switched or mode-locked distributed-Bragg reflector…”
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Journal Article -
11
New Two-Color Laser Concepts for THz Generation
Published in IEEE journal of selected topics in quantum electronics (01-03-2008)“…Two-color semiconductor external cavity laser concepts for terahertz (THz) generation are discussed. By defining three critical characteristics, various…”
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Journal Article -
12
Femtosecond diode laser MOPA system at 920 nm based on asymmetric colliding pulse mode-locking
Published in Applied physics. B, Lasers and optics (01-05-2010)“…We report on the generation of 267 fs long pulses with a peak power of 661 W emitted by an InGaAs diode laser master-oscillator power-amplifier (MOPA) system…”
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Journal Article -
13
Rapid shifted excitation Raman difference spectroscopy with a distributed feedback diode laser emitting at 785 nm
Published in Applied physics. B, Lasers and optics (01-12-2006)“…A distributed feedback (DFB) laser diode emitting at 785 nm was tested and applied as a light source for shifted excitation Raman difference spectroscopy…”
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Journal Article -
14
High-Power Picosecond Pulse Generation Due to Mode-Locking With a Monolithic 10-mm-Long Four-Section DBR Laser at 920 nm
Published in IEEE photonics technology letters (01-12-2007)“…A 10-mm-long four-section distributed Bragg reflector laser with a double-quantum-well heterostructure at 920 nm was realized. A maximum optical pulse power of…”
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Journal Article -
15
High-power 894 nm monolithic distributed-feedback laser
Published in Optics express (03-09-2007)“…A ridge-waveguide InGaAs/GaAsP laser, emitting up to 250 mW in a single lateral and longitudinal mode at a wavelength of 894 nm, is presented. The distributed…”
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Journal Article -
16
Compact hybrid master oscillator power amplifier with 3.1-W CW output power at wavelengths around 1061 nm
Published in IEEE photonics technology letters (01-05-2004)“…A hybrid master oscillator power amplifier (MOPA) laser source has been realized by coupling a single-mode three-section distributed Bragg reflector (DBR)…”
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Journal Article -
17
9-W Output Power From an 808-nm Tapered Diode Laser in Pulse Mode Operation With Nearly Diffraction-Limited Beam Quality
Published in IEEE journal of selected topics in quantum electronics (01-09-2007)“…808-nm tapered diode lasers are fabricated based on a super-large optical-cavity (SLOC) structure with very small divergence of 18deg full width at…”
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Journal Article -
18
Five-hundred-milliwatts distributed-feedback diode laser emitting at 940 nm
Published in Optics and laser technology (01-03-2007)“…A DFB laser emitting at a wavelength around 940 nm in a single longitudinal mode up to an output power of 500 mW with a side mode suppression ratio greater…”
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Journal Article -
19
Five-hundred-milliwatts distributed-feedback diode laser emitting at 940nm
Published in Optics and laser technology (01-03-2007)“…A DFB laser emitting at a wavelength around 940nm in a single longitudinal mode up to an output power of 500mW with a side mode suppression ratio greater than…”
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Journal Article -
20
Broad-area lasers with internal surface Bragg gratings for wavelength stabilization at 980nm
Published in 22nd IEEE International Semiconductor Laser Conference (01-09-2010)“…Results of Broad-area distributed Bragg reflector (DBR) lasers with internal 6 th order surface Bragg grating will be presented. More than 15W optical power…”
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Conference Proceeding