Search Results - "Kitchen, D.R."

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  1. 1

    Observation of electromigration at low temperature by Rhoden, W.E., Banton, D.W., Kitchen, D.R., Maskowitz, J.V.

    Published in IEEE transactions on reliability (01-12-1991)
    “…Electromigration and mean time-to-failure were investigated for unglassed thin Al stripes over the temperature range of 223 K to 347 K. Thermal effects are…”
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    Journal Article
  2. 2

    Design of enhanced Schottky-barrier AlGaAs/GaAs MODFET's using highly doped p+surface layers by Priddy, K.L., Kitchen, D.R., Grzyb, J.A., Litton, C.W., Henderson, T.S., Chin-Kun Peng, Kopp, W.F., Morkoc, H.

    Published in IEEE transactions on electron devices (01-02-1987)
    “…The design and performance of enhanced Schottky-barrier height modulation-doped AlGaAs/GaAs field-effect transistors (ESMODFET's) is discussed. Results are…”
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    Journal Article