Search Results - "Kitaura, Yoshiaki"
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Effects of Helioxanthin Derivative-Treated Human Dental Pulp Stem Cells on Fracture Healing
Published in International journal of molecular sciences (01-12-2020)“…Bone defects affect patients functionally and psychologically and can decrease quality of life. To resolve these problems, a simple and efficient method of…”
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Gli1 haploinsufficiency leads to decreased bone mass with an uncoupling of bone metabolism in adult mice
Published in PloS one (14-10-2014)“…Hedgehog (Hh) signaling plays important roles in various development processes. This signaling is necessary for osteoblast formation during endochondral…”
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Overexpression of miR-125b in Osteoblasts Improves Age-Related Changes in Bone Mass and Quality through Suppression of Osteoclast Formation
Published in International journal of molecular sciences (23-06-2021)“…We recently reported an unexpected role of osteoblast-derived matrix vesicles in the delivery of microRNAs to bone matrix. Of such microRNAs, we found that…”
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Local administration of a hedgehog agonist accelerates fracture healing in a mouse model
Published in Biochemical and biophysical research communications (28-10-2016)“…Bone fracture healing is processed through multiple biological stages including the transition from cartilaginous callus to bony callus formation. Because of…”
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Orally administrable peptides derived from egg yolk promote skeletal repair and ameliorate degenerative skeletal disorders in mouse models
Published in Regenerative therapy (01-12-2022)“…Aging, genetic mutations, and other pathological conditions cause impairment of skeletal growth and bone metabolism, which affect activities of daily living…”
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Sandwich-type PLLA-nanosheets loaded with BMP-2 induce bone regeneration in critical-sized mouse calvarial defects
Published in Acta biomaterialia (01-09-2017)“…[Display omitted] To overcome serious clinical problems caused by large bone defects, various approaches to bone regeneration have been researched, including…”
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Therapeutic Potentials of Dimeric Cys25PTH(1–34) Peptide for Osteoporosis and Fracture Healing of the Bones- Buy One, Get One Free
Published in Journal of the Endocrine Society (03-05-2021)“…Objective: The extraordinarily high bone densities identified in the hypoparathyroidism patients originating from PTH R25C mutation suggested the possibility…”
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Refractory WN x /W Self-Aligned Gate GaAs Power Metal-Semiconductor Field-Effect Transistor for 1.9-GHz Digital Mobile Communication System Operating with a Single Low-Voltage Supply
Published in Japanese Journal of Applied Physics (01-01-1994)“…We have developed a refractory WN x /W self-aligned gate GaAs power metal-semiconductor field-effect transistor (MESFET) for use in L-band digital mobile…”
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A Self-Aligned Gate AlGaAs/GaAs Heterostructure Field-Effect Transistor with an Ion-Implanted Buried-Channel for use in High Efficiency Power Amplifiers
Published in Japanese Journal of Applied Physics (01-06-1998)“…In this paper we report on a self-aligned gate buried-channel Al 0.22 Ga 0.78 As/GaAs heterostructure field-effect transistor (BC-HFET). The BC-HFET comprises…”
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Damage formed by Si+ implantation in GaAs
Published in Japanese Journal of Applied Physics (1994)“…Damage formed by low-dose Si + implantation is studied. Variation of damage density with dose in Si + implantation at 50 keV is measured at doses from 3.0×10…”
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Scatterings of shallow threshold voltage on Si-implanted WN self-alignment gate GaAs metal-semiconductor field-effect transistors on different composition 2-inch substrates by growing in three kinds of furnaces
Published in Japanese Journal of Applied Physics (01-10-1991)“…Two-inch undoped GaAs crystal boules were grown from different composition melts in a pyrolytic boron nitride crucible in three kinds of furnaces in order to…”
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Large-signal model of self-aligned gate GaAs FETs for high-efficiency power amplifier design
Published in IEEE MTT-S International Microwave Symposium digest (01-01-1999)“…A large-signal model which can simulate the power-added efficiency of p-pocket self-aligned gate GaAs MESFETs is proposed. This model includes a new drain…”
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A large-signal model of self-aligned gate GaAs FET's for high-efficiency power-amplifier design
Published in IEEE transactions on microwave theory and techniques (01-12-1999)“…We propose a large-signal model that can simulate the power-added efficiency of p-pocket self-aligned gate GaAs MESFET's. This model includes a new drain…”
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A self-aligned gate GaAs MESFET with p-pocket layers for high-efficiency linear power amplifiers
Published in IEEE transactions on electron devices (01-07-1998)“…This paper describes a newly developed GaAs metal semiconductor field-effect transistor (MESFET)-termed p-pocket MESFET-for use as a linear power amplifier in…”
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Minimum-size effects in asymmetric tilt-angle-implanted LDD-WNX-GaAs MESFET's
Published in IEEE transactions on electron devices (01-08-1991)Get full text
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Buried-Channel WN x /W Self-Aligned GaAs MESFET Process with Selectively Implanted Channel and Undoped Epitaxial Surface Layers for MMIC Applications
Published in Japanese Journal of Applied Physics (01-02-1995)“…The combined process of epitaxy and ion implantation has been developed in the fabrication of a buried-channel WN x /W self-aligned GaAs metal-semiconductor…”
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A 10-GHz 8-b multiplexer/demultiplexer chip set for the SONET STS-192 system
Published in IEEE journal of solid-state circuits (01-12-1991)“…An ultrahigh-speed 8-b multiplexer (MUX) and demultiplexer (DMUX) chip set has been developed for the synchronous optical network (SONET) next-generation…”
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A 2-V operation RF front-end GaAs MMIC for PHS hand-set
Published in 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192) (1998)“…A single 2-V operation RF front-end MMIC has been developed using three kinds of self-aligned gate MESFETs. Its transmitter block of a power amplifier with an…”
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Conference Proceeding -
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An ECL-compatible GaAs SCFL design method
Published in IEEE journal of solid-state circuits (01-04-1990)“…A source-coupled FET logic (SCFL) circuit design method which provides compatibility with emitter-coupled logic (ECL) in terms of power supply voltage and…”
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