Search Results - "Kissel, Heiko"

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  1. 1

    Defect Imaging in Laser Diodes by Mapping Their Near-Infrared Emission by Tomm, Jens W., Ziegler, Mathias, Kissel, Heiko, Biesenbach, Jens

    Published in Journal of electronic materials (01-06-2010)
    “…We report additional infrared (IR) emission bands at about 1.0 eV and 1.4 eV from GaAs-based diode lasers that have their primary emission at 808 nm (1.53 eV)…”
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    Journal Article Conference Proceeding
  2. 2

    Electroluminescence in quantum well heterostructures p‐Al x Ga 1– x As/GaAs 1– y P y /n‐Al x Ga 1– x As under uniaxial stress by Berman, Irina V., Bogdanov, Evgeniy V., Kissel, Heiko, Minina, Natalia Ya, Shirokov, Stanislav S., Yunovich, Alexander E.

    Published in physica status solidi (b) (01-03-2009)
    “…We present new results on the influence of uniaxial stress up to P = 4 kbar on the electroluminescence spectra and current–voltage characteristics of p‐Al x Ga…”
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    Journal Article
  3. 3

    Electroluminescence in quantum well heterostructures p-Alx Ga1-x As/GaAs1-y Py /n-Alx Ga1-x As under uniaxial stress by Berman, Irina V., Bogdanov, Evgeniy V., Kissel, Heiko, Minina, Natalia Ya, Shirokov, Stanislav S., Yunovich, Alexander E.

    Published in Physica Status Solidi (b) (01-03-2009)
    “…We present new results on the influence of uniaxial stress up to P = 4 kbar on the electroluminescence spectra and current–voltage characteristics of p‐Alx…”
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    Journal Article
  4. 4

    Carrier dynamics in laterally strain-modulated InGaAs quantum wells by Talalaev, Vadim, Tomm, Jens W., Elsaesser, Thomas, Zeimer, Ute, Fricke, Jörg, Knauer, Arne, Kissel, Heiko, Weyers, Markus, Tarasov, Georgiy G., Grenzer, J., Pietsch, U.

    Published in Applied physics letters (26-12-2005)
    “…We investigate the transient recombination and transfer properties of nonequilibrium carriers in an In 0.16 Ga 0.84 As ∕ GaAs quantum well (QW) with an…”
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    Journal Article
  5. 5

    Tailored 9xx nm laser bars for fiber coupling by Konig, H., Lauer, C., Gronninger, G., Hein, S., Gomez-Iglesias, A., Furitsch, M., Maric, J., Straussa, U., Kissel, H., Wolf, P., Biesenbach, J.

    “…Status on low fill factor 9xx nm laser bars will be presented. Conversion efficiency peaks above 66% and slow axis divergence of less than 7° was reached up to…”
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    Conference Proceeding
  6. 6

    High electric field performance of Al 0.3Ga 0.7As/GaAs and Al 0.3Ga 0.7As/GaAs/In 0.3Ga 0.7As quantum well micro-Hall devices by Kunets, Vasyl P., Hoerstel, Wolfgang, Kostial, Helmar, Kissel, Heiko, Müller, Uwe, Tarasov, Georgiy G., Mazur, Yuriy I., Zhuchenko, Zoryana Ya, Masselink, William Ted

    Published in Sensors and actuators. A. Physical. (30-09-2002)
    “…Quantum well micro-Hall devices based on uniformly Si-doped Al 0.3Ga 0.7As/GaAs and Si-δ-doped Al 0.3Ga 0.7As/GaAs/In 0.3Ga 0.7As heterostructures are…”
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    Journal Article
  7. 7
  8. 8

    Extra bright high power laser bars by Lauer, Christian, Bachmann, Alexander, Furitsch, Michael, Grossmann, Volker, Gronninger, Gunther, Leisner, Malte, Sporrer, Konrad, Kissel, Heiko, Stoiber, Michael, Biesenbach, Jens, Strauss, Uwe

    “…We present improvements of the lateral beam divergence and brightness of gain-guided mini-bars for emission at 976nm at highest brightness levels. The beam…”
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    Conference Proceeding Journal Article
  9. 9