Search Results - "Kissel, Heiko"
-
1
Defect Imaging in Laser Diodes by Mapping Their Near-Infrared Emission
Published in Journal of electronic materials (01-06-2010)“…We report additional infrared (IR) emission bands at about 1.0 eV and 1.4 eV from GaAs-based diode lasers that have their primary emission at 808 nm (1.53 eV)…”
Get full text
Journal Article Conference Proceeding -
2
Electroluminescence in quantum well heterostructures p‐Al x Ga 1– x As/GaAs 1– y P y /n‐Al x Ga 1– x As under uniaxial stress
Published in physica status solidi (b) (01-03-2009)“…We present new results on the influence of uniaxial stress up to P = 4 kbar on the electroluminescence spectra and current–voltage characteristics of p‐Al x Ga…”
Get full text
Journal Article -
3
Electroluminescence in quantum well heterostructures p-Alx Ga1-x As/GaAs1-y Py /n-Alx Ga1-x As under uniaxial stress
Published in Physica Status Solidi (b) (01-03-2009)“…We present new results on the influence of uniaxial stress up to P = 4 kbar on the electroluminescence spectra and current–voltage characteristics of p‐Alx…”
Get full text
Journal Article -
4
Carrier dynamics in laterally strain-modulated InGaAs quantum wells
Published in Applied physics letters (26-12-2005)“…We investigate the transient recombination and transfer properties of nonequilibrium carriers in an In 0.16 Ga 0.84 As ∕ GaAs quantum well (QW) with an…”
Get full text
Journal Article -
5
Tailored 9xx nm laser bars for fiber coupling
Published in 2012 IEEE Photonics Society Summer Topical Meeting Series (01-07-2012)“…Status on low fill factor 9xx nm laser bars will be presented. Conversion efficiency peaks above 66% and slow axis divergence of less than 7° was reached up to…”
Get full text
Conference Proceeding -
6
High electric field performance of Al 0.3Ga 0.7As/GaAs and Al 0.3Ga 0.7As/GaAs/In 0.3Ga 0.7As quantum well micro-Hall devices
Published in Sensors and actuators. A. Physical. (30-09-2002)“…Quantum well micro-Hall devices based on uniformly Si-doped Al 0.3Ga 0.7As/GaAs and Si-δ-doped Al 0.3Ga 0.7As/GaAs/In 0.3Ga 0.7As heterostructures are…”
Get full text
Journal Article -
7
High electric field performance of Al0.3Ga0.7As/GaAs and Al0.3Ga0.7As/GaAs/In0.3Ga0.7As quantum well micro-Hall devices
Published in Sensors and actuators. A. Physical. (30-09-2002)Get full text
Journal Article -
8
Extra bright high power laser bars
Published in 2015 IEEE High Power Diode Lasers and Systems Conference (HPD) (01-10-2015)“…We present improvements of the lateral beam divergence and brightness of gain-guided mini-bars for emission at 976nm at highest brightness levels. The beam…”
Get full text
Conference Proceeding Journal Article -
9
Electroluminescence in quantum well heterostructures p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs under uniaxial stress
Published in Physica status solidi. B. Basic research (2009)Get full text
Conference Proceeding