Search Results - "Kishino, Seigô"

Barrier height of InP Schottky diodes prepared by means of UV oxidation by NAKAMURA, J, NIU, H, KISHINO, S

“…Schottky diodes of Au/oxide/InP are fabricated by means of UV oxidation and evaluated by means of current-voltage ( I-V ) and capacitance-voltage ( C-V )…”
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ICTS of MOS interface states enhanced by gold diffusion by YOSHIDA, H, NIU, H, KISHINO, S

“…An enhancement of interface states of Si MOS diode by gold diffusion is observed by the isothermal capacitance transient spectroscopy (ICTS) measurement. The…”
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Precise angle and position detection utilizing optical interference on metal-oxide-semiconductor-type position-sensitive detectors by NIU, H, SHIRAISHI, T, YOSHIDA, H, MATSUDA, T, KISHINO, S

“…The optical interference effect is applied to the previously presented metal-oxide-semiconductor (MOS)-type position-sensitive detector (PSD) to achieve more…”
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Chemical Composition of Al 2 O 3 /InP Metal-Insulator-Semiconductor Interfaces Improved by Plasma and Ultraviolet Oxidation by Matsuda, Tetsuro, Yoshida, Haruhiko, Nara, Naoki, Hirohiko Niu, Hirohiko Niu, Seigô Kishino, Seigô Kishino

“…Plasma and ultraviolet (UV) oxidation are used to obtain insulating films for the fabrication of an InP metal-insulator-semiconductor diode. A thin Al film is…”
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MOS-type one-dimensional position-sensitive detectors with a linearly detectable face of 30 mm long by MATSUBARA, Y, KODAI, T, YOSHIDA, H, NIU, H, MATSUDA, T, KISHINO, S

“…Experiments have been conducted for the MOS-type position-sensitive detector (PSD) to make one-dimensional PSDs of large detection range, based on the previous…”
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Thermally Induced Microdefects in Czochralski-Grown Silicon: Nucleation and Growth Behavior by Kishino, Seigô, Matsushita, Yoshiaki, Kanamori, Masaru, Iizuka, Takashi

“…The current understanding of thermally induced microdefects in Czochralski-grown silicon crystals is briefly reviewed and our investigations of the defects are…”
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Anomalous Transmission in Bragg-Case Diffraction of X-Rays by Kishino, Seigô

“…Anomalous enhancement of a transmitted X-ray beam in Bragg-case diffraction is studied experimentally for the case that the direction of the diffracted beam…”
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Carbon and oxygen role for thermally induced microdefect formation in silicon crystals by Kishino, Seigô, Matsushita, Yoshiaki, Kanamori, Masaru

“…Thermally induced microdefect formation phenomena are investigated in connection with oxygen and carbon in silicon crystals by using x-ray diffraction,…”
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Enhanced Sensitivity of Anomalously Transmitted Intensity to Lattice Defects in Asymmetric Bragg-Case Diffraction of X-Rays by Kishino, Seigô

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An MOS-type two-dimensional PSD using the AC photovoltage phase by NIU, H, MAEDA, M, MATSUBARA, Y, YOSHIDA, H, MATSUDA, T, KISHINO, S

“…A simulation and experiments have been conducted to develop a two-dimensional position-sensitive detector (PSD) from the previously presented MOS-type PSD. The…”
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A Study on Thermally Induced Microdefects in Czochralski-Grown Silicon Crystals : Dependence on Annealing Temperature and Starting Materials by Matsushita, Yoshiaki, Kishino, Seigô, Kanamori, Masaru

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Suppression of oxidation-stacking-fault generation by preannealing in N2 atmosphere by Kishino, Seigô, Isomae, Seiichi, Tamura, Masao, Maki, Michiyoshi

“…Suppression of oxidation-stacking-fault (OSF) generation is studied by x-ray section topography, etching technique, and transmission electron microscopy (TEM)…”
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Determination of the Mole Fraction of GaP in GaAsP Single Crystal by A New X-Ray Diffraction Technique by Kishino, Seigô

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Heavy Metal Gettering by an Intrinsic Gettering Technique Using Microdefects in Czochralski-Grown Silicon Wafers by Kishino, Seigô, Nagasawa, Kazutoshi, Iizuka, Takashi

“…The ability of an intrinsic gettering (IG) using microdefects in Czochralski silicon wafers is verified on copper diffused wafers with the help of a neutron…”
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Theoretical Considerations on Bragg-case Diffraction of X-rays at a Small Glancing Angle by Kishino, Seigô, Kohra, Kazutake

“…X-ray diffraction phenomenon, for which the glancing angle of the incident beam is so small that the effect of specular reflection can not be neglected, is…”
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The Enhancement of Anomalously Transmitted X-Ray Intensity by Asymmetric Diffraction and Its Application to Si Wafer Evaluation by Kishino, Seigô, Yoshihiro, Naotsugu, Iizuka, Takashi

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Correlation between Photoluminescence Lifetime and Interface Trap Density in Silicon-on-Insulator Wafers by Tajima, Michio, Yoshida, Haruhiko, Ibuka, Shigeo, Kishino, Seigo

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A New Technique of X-Ray Diffraction Microscopy of Scanning Type by Kishino, Seigô, Sugita, Yoshimitsu, Kohra, Kazutake

“…A new technique of the scanning method is proposed for obtaining an undistorted image in the X-ray diffraction microscopy, where, in contrast to the usual Lang…”
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Lattice Parameters of Ion-Implanted Silicon Crystals by Mitsuishi, Tomokuni, Kishino, Seigô, Noda, Atsuko

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Shapiro-like steps from a weakly coupled junction prepared with high- T c superconducting materials by Kishino, Seigô, Kuroda, Hideaki, Shibutani, Tuneo, Niu, Hirohiko

“…A trilayer junction composed of YBa2Cu3Oy/La0.7Ca0.3MnOz/YBa2Cu3Oy is prepared and the current-voltage (I-V) characteristics are examined with and without…”
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