Search Results - "Kishimura, Shinji"

Synthesis of Poly[N-(1-adamantyl)vinylsulfonamide-c o- 2-(2-methyl)adamantyl methacrylate] for 193 nm Lithography by Fukuhara, Toshiaki, Shibasaki, Yuji, Ando, Shinji, Kishimura, Shinji, Endo, Masayuki, Sasago, Masaru, Ueda, Mitsuru

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Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography by Kishimura, Shinji, Katsuyama, Akiko, Sasago, Masaru, Shirai, Masamitsu, Tsunooka, Masahiro

“…We investigated the possible use of single-layer resists in vacuum ultraviolet (VUV) lithography. The transmittances in the VUV region of commonly used…”
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Dissolution Rate Analysis of ArF Resists Based on the Percolation Model by Yamaguchi, Atsuko, Takahashi, Makoto, Kishimura, Shinji, Matsuzawa, Nobuyuki, Ohfuji, Takeshi, Tanaka, Tomoaki, Tagawa, Seiichi, Sasago, Masaru

“…We investigated the dissolution properties of ArF-resist base polymers and ArF resist in order to study their development mechanism. We measured the…”
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Study of the Bottom Antireflective Coating Process Using a High-Transparency Resist for ArF Excimer Laser Lithography by Kishimura, Shinji, Takahashi, Makoto, Ohfuji, Takeshi, Sasago, Masaru

“…We have investigated the effect of substrate reflectivity and resist transparency on resist performance in ArF excimer laser lithography with bottom…”
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Effect of the Structure of a Photoactive Compound on the Dissolution Inhibition Effect by Kishimura, Shinji, Yamaguchi, Atsumi, Nagata, Hitoshi

“…The dependence of the dissolution rate of unexposed resist on the concentration of a developer was investigated using a practical resist composition and its…”
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Effect of anion in developer on dissolution characteristics of photoresist by YAMAGUCHI, A, KISHIMURA, S, YAMADA, Y, NAGATA, H

“…The dissolution characteristics of photoresist in developers with added tetramethylammonium salts are discussed. It was observed that the dissolution rate of…”
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New Photoresist Materials for 157-nm Lithography. Poly[Vinylsulfonyl Fluoride-c o-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)-styrene] Partially Protected with tert-Butoxycarbonyl by Fujigaya, Tsuyohiko, Sibasaki, Yuji, Ando, Shinji, Kishimura, Shinji, Endo, Masayoshi, Sasago, Masaru, Ueda, Mitsuru

“…Our molecular orbital calculations predicted excellent transparencies of molecules having sulfonyl fluoride groups in the vacuum ultraviolet (VUV) region. An…”
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Thin organic photoconductive film image sensors with extremely high saturation of 8500 electrons/µm2 by Mori, Mitsuyoshi, Hirose, Yutaka, Segawa, Mizuki, Miyanaga, Isao, Miyagawa, Ryohei, Ueda, Tetsuya, Nara, Hajime, Masuda, Hiroshi, Kishimura, Shinji, Sasaki, Tomoyuki, Kato, Yoshihisa, Imada, Yuuki, Asano, Hideki, Inomata, Hiroshi, Koguchi, Hideyuki, Ihama, Mikio, Mishima, Yasuyoshi

“…We have developed an image sensor with thin organic photoconductive film (OPF) laminated on CMOS circuits. Owing to high capacity of a charge storage node, the…”
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Insolubilization mechanism of chemically amplified negative photoresists by Yamaguchi, Atsumi, Kishimura, Shinji, Tsujita, Kouichiro, Morimoto, Hiroaki, Tsukamoto, Katsuhiro, Nagata, Hitoshi

“…This article reports on the difference of chemical reactions of polyvinylphenol (PVP) and novolak resin as a base polymer with a melamine cross‐linker…”
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Improvement of Dry Etching Resistance of Resists by Deep UVCure by Kishimura, Shinji, Sakai, YoshikaKimura, Tsujita, Kouichirou, Matsui, Yasuji

“…The improvement of dry etching resistance of photoresists by the deep UV cure has been attempted. We have tried deep UV cure under N 2 gas flow for KrF…”
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Challenges to 0.1 µm Resolution Capability in ArF Single Layer Resist Process with Weak Resolution Enhancement Techniques by Takahashi, Makoto, Kishimura, Shinji, Ohfuji, Takeshi, Sasago, Masaru

“…We examine the resolution capability of the ArF single layer resist process with weak resolution enhancement techniques. To do this, annular illumination and…”
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Thin organic photoconductive film image sensors with extremely high saturation of 8500 electrons/µm2 by Mori, Mitsuyoshi, Hirose, Yutaka, Segawa, Mizuki, Miyanaga, Isao, Miyagawa, Ryohei, Ueda, Tetsuya, Nara, Hajime, Masuda, Hiroshi, Kishimura, Shinji, Sasaki, Tomoyuki, Kato, Yoshihisa, Imada, Yuuki, Asano, Hideki, Inomata, Hiroshi, Koguchi, Hideyuki, Ihama, Mikio, Mishima, Yasuyoshi

“…We have developed an image sensor with thin organic photoconductive film (OPF) laminated on CMOS circuits. Owing to high capacity of a charge storage node, the…”
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Study Of Bottom Antireflective Coating Process Using A High-Transparency Resist For ArF Excimer Laser Lithography by Kishimura, S., Takahashi, M., Ohfuji, T., Sasago, M.

“…In this study, we investigated the effect of substrate reflectivity and resist transparency on the resist performance, and the controllability of critical…”
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Design concepts of single-layer-resists for VUV lithography by Kishimura, S., Katsuyama, A., Sasago, M., Shirai, M., Tsunooka, M.

“…We have studied the design of single-layer-resists for VUV lithography. From the point of view of transparency, phenol resins may be used as well as…”
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Approach of various polymers to 157 nm single-layer resists by Kishimura, S., Sasago, M., Shirai, M., Tsunooka, M.

“…Vacuum ultraviolet (VUV) lithography using the F/sub 2/ excimer laser (157 nm) has been proposed as the most promising candidates for 100-70 nm rule device. We…”
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Lithography solution for 65-nm node system LSIs by Matsuo, T., Endo, M., Kishimura, S., Misaka, A., Sasago, M.

“…For 65-nm node devices, we have systematically investigated the lithographic margin of electron-beam projection lithography (EPL), ArF lithography and vacuum…”
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Multi-generation device fabrication by ArF lithography by Mori, S., Morisawa, T., Matsuzawa, N., Kaimoto, Y., Endo, M., Matsuo, T., Takahashi, M., Naito, T., Naruse, Y., Kishimura, S., Takechi, S., Yamaguchi, A., Uematsu, M., Onodera, T., Nakazawa, K., Kamon, K., Tatsumi, T., Morishita, S., Kuhara, K., Ohfuji, T., Ogawa, T., Ohtsuka, H., Inoue, M., Sasago, M.

“…Summary form only given. Although ArF excimer laser lithography is expected to attain the highest resolution possible in optical lithography, its application…”
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