Search Results - "Kirkpatrick, C. G."

Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAs by Holmes, D E, Chen, R T, Elliott, K R, Kirkpatrick, C G

“…We show that the electrical compensation of undoped GaAs grown by the liquid encapsulated Czochralski technique is controlled by the melt stoichiometry. The…”
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Infrared absorption of the 78-meV acceptor in GaAs by Elliott, K. R., Holmes, D. E., Chen, R. T., Kirkpatrick, C. G.

“…We observe the infrared absorption spectra associated with a residual 78-meV acceptor in undoped liquid encapsulated Czochralski GaAs. The acceptor appears to…”
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Role of the piezoelectric effect in device uniformity of GaAs integrated circuits by CHANG, M. F, LEE, C. P, ASBECK, P. M, VAHRENKAMP, R. P, KIRKPATRICK, C. G

“…In order to assess the orientation dependence of device uniformity in GaAs integrated circuits, metal-semiconductor field-effect transistors (MESFET’s) were…”
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Making GaAs integrated circuits by Kirkpatrick, C.G.

“…Digital gallium arsenide (GaAs) integrated circuits offer prospects for high-performance electronics, particularly for increased speed and radiation hardness…”
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Symmetrical contours of deep level EL2 in liquid encapsulated Czochralski GaAs by HOLMES, D. E, CHEN, R. T, ELLIOTT, K. R, KIRKPATRICK, C. G

“…We have determined the isoconcentration contours of the deep level EL2 across 3-in.-diam, semi-insulating GaAs crystals grown by the liquid encapsulated…”
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Mechanism of surface conduction in semi-insulating GaAs by CHANG, M. F, LEE, C. P, HOU, L. D, VAHRENKAMP, R. P, KIRKPATRIK, C. G

“…The space-charge-limited current leakage in processed semi-insulating GaAs wafer has been found to occur very close to the surface. The depth profile of the…”
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Numerical simulation of GaAs/GaAlAs heterojunction bipolar transistors by Asbeck, P.M., Miller, D.L., Asatourian, R., Kirkpatrick, C.G.

“…A numerical analysis program for the 1-dimensional simulation of GaAs/GaAlAs heterojunction bipolar transistors is described. Calculations for a representative…”
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Application of thermal pulse annealing to ion-implanted GaAlAs/GaAs heterojunction bipolar transistors by Asbeck, P.M., Miller, D.L., Babcock, E.J., Kirkpatrick, C.G.

“…Post-implant anneals of short (10-15 s) duration are compared with extended (10 min) furnace anneals for the fabrication of Be-implanted MBE-grown GaAlAs/GaAs…”
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Disorder of an AlAs-GaAs superlattice by silicon implantation by Coleman, J. J., Dapkus, P. D., Kirkpatrick, C. G., Camras, M. D., Holonyak, N.

“…Data are presented on a 126-layer AlAs-GaAs superlattice which has been selectively disordered by silicon implantation. Silicon ions, implanted at 375 keV and…”
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High-speed GaAs frequency dividers using a self-aligned dual-level double lift-off substitution gate MESFET process by Chang, M.F., Lee, S.J., Walton, E.R., Lee, C.P., Ryan, F.J., Vahrenkamp, R.P., Kirkpatrick, C.G.

“…A new self-aligned substitution gate process, which uses a dual-level resist (photoresist/polymethylmethacrylate (PMMA)) and a double lift-off technique has…”
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Information-storage device using surface diodes by Kirkpatrick, C. G., Possin, G. E., Norton, J. F.

“…A concept for a high-density memory-storage device is described. Information is recorded as small implanted p+ (or n+) diodes, formed by a focused ion beam, on…”
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Compensation mechanism in liquid encapsulated Czochralski GaAs: Importance of melt stoichiometry by Holmes, D.E., Chen, R.T., Elliott, K.R., Kirkpatrick, C.G., Yu, P.W.

“…It is shown that the key to reproducible growth of undoped semi-insulating GaAs by the liquid encapsulated Czochralski (LEC) technique is the control over the…”
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GaAs/GaAlAs heterojunction bipolar transistors with cutoff frequencies above 10 GHz by Asbeck, P.M., Miller, D.L., Petersen, W.C., Kirkpatrick, C.G.

“…This paper describes the fabrication and high-frequency performance of an npn GaAs/GaAlAs heterojunction bipolar transistor. The fabrication process utilized…”
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VIB-1 (Ga,Al)As/GaAs heterojunction bipolar transistors: Design considerations and experimental results by Asbeck, P.M., Miller, D.L., Petersen, W.C., Kirkpatrick, C.G.

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IVA-4 an ultra-low power, high speed GaAs 256-bit static RAM with depletion mode MESFETs by Lee, S.J., Vahrenkamp, R.P., Kaelin, G.R., Zucca, R., Hou, L.D., Lee, C.P., Kirkpatrick, C.G.

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Temperature Control by Means of the Peltier Effect: Increased Reliability and Stability for Electronic Components Which Are Thermostatically Controlled by Armi, E.L., Kirkpatrick, C.G.

“…A major potential application of the Peltier effect is the thermostating of electronic equipment, modules and individual components. Limitations of size and…”
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High speed GaAs integrated circuits by Long, S.I., Welch, B.M., Zucca, R., Asbeck, P.M., Lee, C-P., Kirkpatrick, C.G., Lee, F.S., Kaelin, G.R., Eden, R.C.

“…Much interest has been expressed in the use of GaAs MESFET's for high speed digital integrated circuits (IC's). Propagation delays in the 60- to 90-ps/gate…”
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Measurement of boron impurity profiles in Si using glow discharge optical spectroscopy by Greene, J. E., Sequeda-Osorio, F., Streetman, B. G., Noonan, J. R., Kirkpatrick, C. G.

“…Glow discharge optical spectroscopy (GDOS) has been applied to the measurement of impurity profiles in boron-diffused and ion-implanted Si samples. The GDOS…”
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Compensation Mechanism in Liquid Encapsulated Czochralski GaAs: Importance of Melt Stoichiometry by Chen, R T, Elliott, K R, Kirkpatrick, C G, Yu, P W

“…It is shown that the key to reproducible growth of undoped semi-insulating GaAs by the liquid encapsulated Czochralski (LEC) technique is the control over the…”
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Compensation Mechanism in Liquid Encapsulated Czochralski GaAs: Importance of Melt Stoichiometry by Holmes, D.E., Chen, R.T., Elliott, K.R., Kirkpatrick, C.G., Yu, P.W.

“…It is shown that the key to reproducible growth of undoped semi-insulating GaAs by the liquid encapsulated Czochralski (LEC) technique is the control over the…”
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