Search Results - "Kirchoefer, S. W."

Room-temperature ferroelectricity in strained SrTiO3 by HAENI, J. H, IRVIN, P, TAGANTSEV, A. K, PAN, X. Q, STREIFFER, S. K, CHEN, L. Q, KIRCHOEFER, S. W, LEVY, J, SCHLOM, D. G, CHANG, W, UECKER, R, REICHE, P, LI, Y. L, CHOUDHURY, S, TIAN, W, HAWLEY, M. E, CRAIGO, B

“…Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition…”
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Examination of the Possibility of Negative Capacitance Using Ferroelectric Materials in Solid State Electronic Devices by Krowne, C. M, Kirchoefer, S. W, Chang, W, Pond, J. M, Alldredge, L. M. B

“…We show here, using fundamental energy storage relationships for capacitors, that there are severe constraints upon what can be realized utilizing…”
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Microwave properties of tetragonally distorted (Ba0.5Sr0.5)TiO3 thin films by Kim, W. J., Chang, W., Qadri, S. B., Pond, J. M., Kirchoefer, S. W., Chrisey, D. B., Horwitz, J. S.

“…A strong correlation is observed between the structure and the microwave dielectric properties of epitaxial Ba0.5Sr0.5TiO3 (BST) thin films deposited onto…”
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Ferroelectric (Pb,Sr)TiO3 epitaxial thin films on (001) MgO for room temperature high-frequency tunable microwave elements by Liu, S. W., Weaver, J., Yuan, Z., Donner, W., Chen, C. L., Jiang, J. C., Meletis, E. I., Chang, W., Kirchoefer, S. W., Horwitz, J., Bhalla, A.

“…Ferroelectric Pb0.35Sr0.65TiO3 (PSTO) thin films were grown on (001) MgO by using pulsed laser deposition. Microstructure studies from x-ray diffraction and…”
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(Ba, Sr)TiO3 thin films grown by pulsed laser deposition with low dielectric loss at microwave frequencies by BUBB, D. M, HORWITZ, J. S, QADRI, S. B, KIRCHOEFER, S. W, HUBERT, C, LEVY, J

“…We report a method for producing BST films with consistently high figures of merit for tunable microwave applications. (Ba1-x,Srx)TiO3 (x=0.4, target doped…”
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Direct correlation and strong reduction of native point defects and microwave dielectric loss in air-annealed (Ba,Sr)TiO3 by Zeng, Z. Q., Podpirka, A., Kirchoefer, S. W., Asel, T. J., Brillson, L. J.

“…We report on the native defect and microwave properties of 1 μm thick Ba0.50Sr0.50TiO3 (BST) films grown on MgO (100) substrates by molecular beam epitaxy…”
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Barium–strontium–titanate thin films for application in radio-frequency-microelectromechanical capacitive switches by Kirchoefer, S. W., Cukauskas, E. J., Barker, N. S., Newman, H. S., Chang, W.

“…In this letter we report the application of barium–strontium–titanate (BST) thin film oxides as the dielectric layer in radio-frequency-microelectromechanical…”
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Structure and composition of Ba0.5Sr0.5TiO3 films deposited on (001) MgO substrates and the influence of sputtering pressure by Twigg, M.E., Alldredge, L.M.B., Chang, W., Podpirka, A., Kirchoefer, S.W., Pond, J.M.

“…The structure and composition of Ba0.5Sr0.5TiO3 thin films, sputter deposited on (001) MgO substrates, have been characterized by transmission electron…”
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Microwave properties of Sr0.5Ba0.5TiO3 thin-film interdigitated capacitors by Kirchoefer, S. W., Pond, J. M., Carter, A. C., Chang, W., Agarwal, K. K., Horwitz, J. S., Chrisey, D. B.

“…Interdigitated capacitors have been fabricated on ferroelectric thin films of Sr0.5Ba0.5TiO3. These devices have been characterized at microwave frequencies…”
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Structural and microwave properties of (Ba, Sr)TiO3 films grown by pulsed laser deposition by KIM, W. J, CHANG, W, QADRI, S. B, POND, J. M, KIRCHOEFER, S. W, HORWITZ, J. S, CHRISEY, D. B

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Microstructure Evolution of Pulsed Laser-Deposited (Ba, Sr)TiO3 Films on MgO for Microwave Applications by Dey, Sandwip K., Majhi, Prashant, Horwitz, James S., Kirchoefer, S. W., Kim, W. J.

“…To develop low‐loss tunable microwave circuits, based on the field dependence of dielectric permittivity, phase pure (Ba0.5, Sr0.5)TiO3 doped with 1% W (BST)…”
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Microwave interactions in semiconductor multiple-quantum-well heterostructures utilizing a coplanar-strip geometry device by Kirchoefer, S.W.

“…A novel device design utilizing a multiple-quantum-well heterostructure conduction channel with an oxide-isolated overlying coplanar-strip transmission line…”
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Light-activated telegraph noise in AlGaAs tunnel barriers : optical probing of a single defect by CAMPBELL, P. M, SNOW, E. S, MOORE, W. J, GLEMBOCKI, O. J, KIRCHOEFER, S. W

“…Authors observe light-activated switching between discrete resistance states in GaAs/AlGaAs single-barrier tunnel structures. Switching is caused by a change…”
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Occupation of quantum states determined by energy storage in superlattice quantum state transfer devices by KIRCHOEFER, S. W

“…Quantum state occupation is observed in admittance measurements of two well type (bilevel) superlattice channel conduction devices known as quantum state…”
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Negative differential resistance at 300 K in a superlattice quantum state transfer device by KIRCHOEFER, S. W, MAGNO, R, COMAS, J

“…Negative differential resistance has been observed at 300 K in a bilevel superlattice structure. Additional experimental data from conventional superlattice…”
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Miniature ridge-waveguide filter module employing moldable dielectric material by Rauscher, C., Kirchoefer, S.W.

“…The experimental 6-8.6-GHz five-pole bandpass filter being presented is composed of ridge-waveguide resonator segments, evanescent-mode inter-resonator…”
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Spectrally dependent photocurrent measurements in n+-n-n+ heterostructure devices by SNOW, E. S, KIRCHOEFER, S. W, GLEMBOCKI, O. J

“…Photocurrent measurements are shown to be a useful tool for characterizing charge-injecting heterostructure devices under bias. The measurements rely on a…”
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AlSb/InAs HEMT's for low-voltage, high-speed applications by Boos, J.B., Kruppa, W., Bennett, B.R., Park, D., Kirchoefer, S.W., Bass, R., Dietrich, H.B.

“…The design, fabrication, and characterization of 0.1 /spl mu/m AlSb/InAs HEMT's are reported. These devices have an In/sub 0.4/Al/sub 0.6/As/AlSb composite…”
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Electrically and magnetically tunable microwave device using (Ba, Sr) TiO3/Y3Fe5O12 multilayer by KIM, W. J, CHANG, W, QADRI, S. B, WU, H. D, POND, J. M, KIRCHOEFER, S. W, NEWMAN, H. S, CHRISEY, D. B, HORWITZ, J. S

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Microwave amplification to 2.5 GHz in a quantum state transfer device by POND, J. M, KIRCHOEFER, S. W, CUKAUSKAS, E. J

“…Reflection amplification has been demonstrated from 40 MHz to 2.5 GHz using a bilevel superlattice structure known as a quantum state transfer device…”
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