Search Results - "King-Jien Chui"

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    n-MOSFET With Silicon-Carbon Source/Drain for Enhancement of Carrier Transport by King-Jien Chui, Kah-Wee Ang, Balasubramanian, N., Ming-Fu Li, Samudra, G.S., Yee-Chia Yeo

    Published in IEEE transactions on electron devices (01-02-2007)
    “…A novel strained-silicon (Si) n-MOSFET with 50-nm gate length is reported. The strained n-MOSFET features silicon-carbon (Si 1-y C y ) source and drain (S/D)…”
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    Journal Article
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    Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon-Carbon Source/Drain Regions by Kah-Wee Ang, King-Jien Chui, Chih-Hang Tung, Balasubramanian, N., Samudra, G.S., Yee-Chia Yeo

    Published in IEEE transactions on electron devices (01-11-2007)
    “…We report the demonstration of a novel strained silicon-on-insulator N-MOSFET featuring silicon-carbon (Si 1-y C y ) source and drain (S/D) regions, tantalum…”
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    Journal Article
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    Analog switching characteristics in TiW/Al2O3/Ta2O5/Ta RRAM devices by Song, Wendong, Wang, Weijie, Lee, Hock Koon, Li, Minghua, Zhuo, Victor Yi-Qian, Chen, Zhixian, Chui, King Jien, Liu, Jen-Chieh, Wang, I.-Ting, Zhu, Yao, Singh, Navab

    Published in Applied physics letters (23-09-2019)
    “…In this letter, we report analog switching characteristics in an analog resistive random access memory device based on a TiW/Al2O3/Ta2O5/Ta stack. For this…”
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    Journal Article
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    Enhanced Strain Effects in 25-nm Gate-Length Thin-Body nMOSFETs With Silicon-Carbon Source/Drain and Tensile-Stress Liner by Kah-Wee Ang, King-Jien Chui, Chih-Hang Tung, Balasubramanian, N., Ming-Fu Li, Samudra, G.S., Yee-Chia Yeo

    Published in IEEE electron device letters (01-04-2007)
    “…We report the demonstration of 25-nm gate-length L G strained nMOSFETs featuring the silicon-carbon source and drain (Si 1-y C y S/D) regions and a thin-body…”
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    Journal Article
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    Demonstration and Challenges of Through Si Interposer (TSI) with 5-layer Frontside Cu Metal and 2-layer Backside Cu RDL by Tseng, Ya-Ching, Chui, King-Jien

    “…Through Silicon Interposer (TSI) is a promising technology to realize 2.5D/3D platform for high-performance computing like artificial intelligence (AI) and…”
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    Conference Proceeding
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    Process and Integration Challenges for Via Last TSV (from top) on Functional LNA SOI wafers for 3D Heterogeneous chiplet integration by Wang, Xiangyu, Rotaru, Mihai Dragos, Haitao, Yu, Jonq, Mingchinq, Chong, Chai Tai, Chui, King-Jien

    “…In our previous work, we discussed the demonstration of 10µm x 100µm Via-Last TSV (from top) fabrication on a blanket SOI Wafer, as illustrated in Fig 1(a)…”
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    Conference Proceeding
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    Investigation of SnAg Superconductivity as Solder Material for Cryogenic Packaging by Ng, Yong Chyn, Li, Hongyu, Jaafar, Norhanani Binte, Cheow Siong Lee, Rainer, Huang, Ding, Lau, Chit Siong, Eng Johnson Goh, Kuan, Chui, King-Jien

    “…The drive towards quantum computing has prompted a need for advanced packaging technologies capable of withstanding the harsh cryogenic environments in which…”
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    Conference Proceeding
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    Indium-based Flip-chip Interconnect for Cryogenic Packaging by Jaafar, Norhanani Binte, Hongyu, Li, Choong, Chong Ser, Yong Chyn, Ng, Huang, Ding, Lau, Chit Siong, Goh, Kuan Eng Johnson, Chui, King-Jien

    “…Flip-chip die attachment manufacturing has seen a dramatic increase in recent years due to improvements in electrical performance and reduced form-factor…”
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    Conference Proceeding
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    Evaluation of Low Temperature Inorganic Dielectric Materials for Hybrid Bonding Applications by Kumar, Mishra Dileep, Nagendra Sekhar, Vasarla, Choong, Chong Ser, Chandra Rao, B.S.S., Chui, King-Jien, Rao, Vempati Srinivasa

    “…High-bandwidth memory (HBM) market is witnessing huge demand for high performance computing. Vertical/3D stacking of memory chips using hybrid bonding is a…”
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    Conference Proceeding
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    Strained Thin-Body p-MOSFET With Condensed Silicon-Germanium Source/Drain for Enhanced Drive Current Performance by Kah-Wee Ang, King-Jien Chui, Madan, A., Lai-Yin Wong, Chih-Hang Tung, Balasubramanian, N., Ming-Fu Li, Samudra, G.S., Yee-Chia Yeo

    Published in IEEE electron device letters (01-06-2007)
    “…Strained p-MOSFETs with silicon-germanium (SiGe) source and drain (S/D) stressors were fabricated on thin-body silicon-on-insulator (SOI) substrate using a…”
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    Journal Article
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    Strained-SOI n-Channel Transistor With Silicon-Carbon Source/Drain Regions for Carrier Transport Enhancement by King-Jien Chui, Kah-Wee Ang, Hock-Chun Chin, Chen Shen, Lai-Yin Wong, Chih-Hang Tung, Balasubramanian, N., Ming Fu Li, Samudra, G.S., Yee-Chia Yeo

    Published in IEEE electron device letters (01-09-2006)
    “…A novel 80 nm gate length strained-Si n-channel transistor structure with lattice-mismatched source and drain (S/D) formed on thin-body silicon-on-insulator…”
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    Journal Article
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    CMOS-Compatible Fine Pitch Al-Al Bonding by Cheemalamarri, Hemanth Kumar, Varghese, Binni, Jaibir, Sharma, Hongyu, Li, S, Chandra Rao S, Singh, Navab, Rao, Vempati Srinivasa, Chui, King-Jien

    “…The metal-metal bonding has become more promising for fine-line hermitic sealing and electronic packaging applications. Even though aluminum has CMOS…”
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    Conference Proceeding
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    Demonstration of a CMOS-Compatible Superconducting Cryogenic Interposer for Advanced Quantum Processors by Chui, King-Jien, Li, Hongyu, Ng, Yong Chyn, Lau, Chit Siong, Goh, K. E. J., Huang, D., Tseng, Ya-Ching, Chen, J. K., Yu, H., Jaafar, B. N., Lin, H., Varghese, B.

    “…An advanced quantum processor requires millions of qubits but is at present limited in scalability due to limitations in the wiring of qubits. A 2.5D silicon…”
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    Conference Proceeding
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    A Precise Wafer Thinning Integration Process for nano-TSV Formation by Tseng, Ya-Ching, Kiat Goh, Simon Chun, Darshini, Senthilkumar, Venkataraman, Nandini, Sundaram, Arvind, Khang, Tew Chin, Ok, Yoo Jae, Chui, King-Jien

    “…This paper proposes the use of a Silicon-On-Insulator (SOI) substrate to control the final Si thickness on the substrate. After direct wafer-to-wafer bonding…”
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    Conference Proceeding
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    Electrical Characterization of CMP-Less Via-Last TSV under Reliability Stress Conditions by King Jien Chui, Mingbin Yu

    “…Via-Last (VL) Through Silicon Via (TSV) is being pursued for its added benefits of process flow simplicity, lower cost and integration flexibility. A novel,…”
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    Conference Proceeding
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    SDODEL MOSFET for performance enhancement by King Jien Chui, Samudra, G.S., Yee-Chia Yeo, Kheng-Chok Tee, Leong, K.-W., Kian Meng Tee, Benistant, F., Lap Chan

    Published in IEEE electron device letters (01-03-2005)
    “…A high-energy, low-dose implant of the source/drain (S/D) doping type is introduced after the gate definition step to form doped regions beneath and separated…”
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    Journal Article
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    A Novel Method for Air-Gap Formation around Via-Middle (VM) TSVs for Effective Reduction in Keep-Out Zones (KOZ) by King-Jien Chui, Woon Leng Loh, Xiangyu Wang, Zhaohui Chen, Mingbin Yu

    “…Significant stress is induced in the crystalline Si area around a Cu-filled Through Silicon Via (TSV) due to the large mismatch in the co-efficient of thermal…”
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    Conference Proceeding
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