Search Results - "King-Jien Chui"
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n-MOSFET With Silicon-Carbon Source/Drain for Enhancement of Carrier Transport
Published in IEEE transactions on electron devices (01-02-2007)“…A novel strained-silicon (Si) n-MOSFET with 50-nm gate length is reported. The strained n-MOSFET features silicon-carbon (Si 1-y C y ) source and drain (S/D)…”
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Journal Article -
2
Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon-Carbon Source/Drain Regions
Published in IEEE transactions on electron devices (01-11-2007)“…We report the demonstration of a novel strained silicon-on-insulator N-MOSFET featuring silicon-carbon (Si 1-y C y ) source and drain (S/D) regions, tantalum…”
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Journal Article -
3
Analog switching characteristics in TiW/Al2O3/Ta2O5/Ta RRAM devices
Published in Applied physics letters (23-09-2019)“…In this letter, we report analog switching characteristics in an analog resistive random access memory device based on a TiW/Al2O3/Ta2O5/Ta stack. For this…”
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4
Enhanced Strain Effects in 25-nm Gate-Length Thin-Body nMOSFETs With Silicon-Carbon Source/Drain and Tensile-Stress Liner
Published in IEEE electron device letters (01-04-2007)“…We report the demonstration of 25-nm gate-length L G strained nMOSFETs featuring the silicon-carbon source and drain (Si 1-y C y S/D) regions and a thin-body…”
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Demonstration and Challenges of Through Si Interposer (TSI) with 5-layer Frontside Cu Metal and 2-layer Backside Cu RDL
Published in 2023 IEEE 25th Electronics Packaging Technology Conference (EPTC) (05-12-2023)“…Through Silicon Interposer (TSI) is a promising technology to realize 2.5D/3D platform for high-performance computing like artificial intelligence (AI) and…”
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Conference Proceeding -
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Process and Integration Challenges for Via Last TSV (from top) on Functional LNA SOI wafers for 3D Heterogeneous chiplet integration
Published in 2023 IEEE 25th Electronics Packaging Technology Conference (EPTC) (05-12-2023)“…In our previous work, we discussed the demonstration of 10µm x 100µm Via-Last TSV (from top) fabrication on a blanket SOI Wafer, as illustrated in Fig 1(a)…”
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Conference Proceeding -
7
Investigation of SnAg Superconductivity as Solder Material for Cryogenic Packaging
Published in 2023 IEEE 25th Electronics Packaging Technology Conference (EPTC) (05-12-2023)“…The drive towards quantum computing has prompted a need for advanced packaging technologies capable of withstanding the harsh cryogenic environments in which…”
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Conference Proceeding -
8
Indium-based Flip-chip Interconnect for Cryogenic Packaging
Published in 2023 IEEE 25th Electronics Packaging Technology Conference (EPTC) (05-12-2023)“…Flip-chip die attachment manufacturing has seen a dramatic increase in recent years due to improvements in electrical performance and reduced form-factor…”
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Conference Proceeding -
9
Evaluation of Low Temperature Inorganic Dielectric Materials for Hybrid Bonding Applications
Published in 2023 IEEE 25th Electronics Packaging Technology Conference (EPTC) (05-12-2023)“…High-bandwidth memory (HBM) market is witnessing huge demand for high performance computing. Vertical/3D stacking of memory chips using hybrid bonding is a…”
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Conference Proceeding -
10
Strained Thin-Body p-MOSFET With Condensed Silicon-Germanium Source/Drain for Enhanced Drive Current Performance
Published in IEEE electron device letters (01-06-2007)“…Strained p-MOSFETs with silicon-germanium (SiGe) source and drain (S/D) stressors were fabricated on thin-body silicon-on-insulator (SOI) substrate using a…”
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Journal Article -
11
Two-Phase Liquid Cooling for High-Power Microelectronics via Embedded Micro-Pin Fin Heat Sink
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01-03-2024)“…Two-phase liquid cooling can achieve high heat flux and is therefore a key method for heat dissipation of high-power microelectronics. In this study, we…”
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Journal Article -
12
Strained-SOI n-Channel Transistor With Silicon-Carbon Source/Drain Regions for Carrier Transport Enhancement
Published in IEEE electron device letters (01-09-2006)“…A novel 80 nm gate length strained-Si n-channel transistor structure with lattice-mismatched source and drain (S/D) formed on thin-body silicon-on-insulator…”
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Journal Article -
13
Room Temperature Plasma-Enhanced Niobium-Niobium Wafer Bonding for 3D Integration of Superconducting Interconnects for Quantum Processing
Published in 2023 IEEE 25th Electronics Packaging Technology Conference (EPTC) (05-12-2023)“…Quantum computing relies on a blend of superposition and entanglement phenomena of qubit devices to solve problems. It promises unparalleled computational…”
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Conference Proceeding -
14
CMOS-Compatible Fine Pitch Al-Al Bonding
Published in 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC) (01-05-2023)“…The metal-metal bonding has become more promising for fine-line hermitic sealing and electronic packaging applications. Even though aluminum has CMOS…”
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Conference Proceeding -
15
Demonstration of a CMOS-Compatible Superconducting Cryogenic Interposer for Advanced Quantum Processors
Published in 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC) (01-05-2023)“…An advanced quantum processor requires millions of qubits but is at present limited in scalability due to limitations in the wiring of qubits. A 2.5D silicon…”
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Conference Proceeding -
16
A Precise Wafer Thinning Integration Process for nano-TSV Formation
Published in 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC) (01-05-2023)“…This paper proposes the use of a Silicon-On-Insulator (SOI) substrate to control the final Si thickness on the substrate. After direct wafer-to-wafer bonding…”
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Conference Proceeding -
17
Electrical Characterization of CMP-Less Via-Last TSV under Reliability Stress Conditions
Published in 2017 IEEE 67th Electronic Components and Technology Conference (ECTC) (01-05-2017)“…Via-Last (VL) Through Silicon Via (TSV) is being pursued for its added benefits of process flow simplicity, lower cost and integration flexibility. A novel,…”
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Conference Proceeding -
18
SDODEL MOSFET for performance enhancement
Published in IEEE electron device letters (01-03-2005)“…A high-energy, low-dose implant of the source/drain (S/D) doping type is introduced after the gate definition step to form doped regions beneath and separated…”
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Journal Article -
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A Novel Method for Air-Gap Formation around Via-Middle (VM) TSVs for Effective Reduction in Keep-Out Zones (KOZ)
Published in 2017 IEEE 67th Electronic Components and Technology Conference (ECTC) (01-05-2017)“…Significant stress is induced in the crystalline Si area around a Cu-filled Through Silicon Via (TSV) due to the large mismatch in the co-efficient of thermal…”
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Conference Proceeding -
20
Under-Bump Metallization Contact Resistance ( R ) Characterization at 10- \mu \text Polymer Passivation Opening
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01-10-2017)“…Under-bump metallization R c is a critical metric for high-density interconnect in electronic devices. We developed a test vehicle to characterize the impact…”
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Journal Article