Search Results - "Kimura, Shin'ichiro"

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    Thick-Strained-Si/Relaxed-SiGe Structure of High-Performance RF Power LDMOSFETs for Cellular Handsets by Kondo, M., Sugii, N., Hoshino, Y., Hirasawa, W., Kimura, Y., Miyamoto, M., Fujioka, T., Kamohara, S., Kondo, Y., Kimura, S., Yoshida, I.

    Published in IEEE transactions on electron devices (01-12-2006)
    “…A strained-Si/relaxed-SiGe structure was applied to laterally diffused MOSFETs (LDMOSFETs) in order to improve the PAE of cellular handset RF power-amplifier…”
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    New Method for Evaluating Electric Field at Junctions of DRAM Cell Transistors by Measuring Junction Leakage Current by Mori, Y., Kimura, S., Yamada, R.-i.

    Published in IEEE transactions on electron devices (01-02-2009)
    “…A new method for the analysis of dynamic random-access memory (DRAM) data-retention characteristics is developed. We extend a 1-D model of the bias dependence…”
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    Aberrant activation of bone marrow Ly6C high monocytes in diabetic mice contributes to impaired glucose tolerance by Ikeda, Yosuke, Sonoda, Noriyuki, Bachuluun, Battsetseg, Kimura, Shinichiro, Ogawa, Yoshihiro, Inoguchi, Toyoshi

    Published in PloS one (2020)
    “…Accumulating evidence indicates that diabetes and obesity are associated with chronic low-grade inflammation and multiple organ failure. Tissue-infiltrated…”
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    Strained-silicon MOSFETs for analog applications: utilizing a supercritical-thickness strained Layer for low leakage current and high breakdown Voltage by Kondo, M., Sugii, N., Miyamoto, M., Hoshino, Y., Hatori, M., Hirasawa, W., Kimura, Y., Kimura, S., Kondo, Y., Yoshida, I.

    Published in IEEE transactions on electron devices (01-05-2006)
    “…Strained-silicon MOSFETs with both high breakdown voltage and low leakage current needed for RF/analog applications were investigated. Proper control of…”
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    Performance evaluation of case definitions of type 1 diabetes for health insurance claims data in Japan by Okui, Tasuku, Nojiri, Chinatsu, Kimura, Shinichiro, Abe, Kentaro, Maeno, Sayaka, Minami, Masae, Maeda, Yasutaka, Tajima, Naoko, Kawamura, Tomoyuki, Nakashima, Naoki

    “…No case definition of Type 1 diabetes (T1D) for the claims data has been proposed in Japan yet. This study aimed to evaluate the performance of candidate case…”
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    Transport properties of a silicon single-electron transistor at 4.2 K by Matsuoka, Hideyuki, Kimura, Shin’ichiro

    Published in Applied physics letters (30-01-1995)
    “…We report on the transport properties of a silicon single-electron transistor at 4.2 K. A quantum dot is formed in the inversion layer of a silicon…”
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    Rutile-type TiO2 thin film for high-k gate insulator by KADOSHIMA, Masaru, HIRATANI, Masahiko, SHIMAMOTO, Yasuhiro, TORII, Kazuyoshi, MIKI, Hiroshi, KIMURA, Shinichiro, NABATAME, Toshihide

    Published in Thin solid films (31-01-2003)
    “…Authors investigated rutile-type titanium dioxide (TiO2) films for possible use as a high-k gate insulator. The TiO2 thin films were directly deposited on Si…”
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    Silicon light-emitting transistor for on-chip optical interconnection by Saito, Shin-ichi, Hisamoto, Digh, Shimizu, Haruka, Hamamura, Hirotaka, Tsuchiya, Ryuta, Matsui, Yuichi, Mine, Toshiyuki, Arai, Tadashi, Sugii, Nobuyuki, Torii, Kazuyoshi, Kimura, Shin'ichiro, Onai, Takahiro

    Published in Applied physics letters (16-10-2006)
    “…The authors propose a light-emitting field-effect transistor with the active layer made of the ultrathin single crystal silicon with the (100) surface…”
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    Strained-silicon MOSFET process technology—control of impurity and germanium atoms at the hetero-interface by Sugii, Nobuyuki, Kimura, Yoshinobu, Kimura, Shin’ichiro, Irieda, Shigefumi, Morioka, Jun, Inada, Taroh

    “…We investigated re-crystallization, the redistribution of arsenic and germanium, and the electrical properties of strained-silicon/Si 0.7Ge 0.3…”
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    Eliminating the Threshold-Voltage Offset of p-Channel Metal-Oxide-Semiconductor Field Effect Transistors in High-Density Dynamic Random Access Memory by Takaura, Norikatsu, Takemura, Riichiro, Matsuoka, Hideyuki, Nagai, Ryo, Yamada, Satoru, Asakura, Hisao, Kimura, Shin'ichiro

    Published in Japanese Journal of Applied Physics (01-04-2004)
    “…The threshold voltage offsets of paired p + -gate p-channel metal-oxide-semiconductor field effect transistors in high-density dynamic random access memory is…”
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    Development of the Thiol-Selective Solid-Supported Oligoarginine-Conjugating Reagent KSH-2 by Fukumoto, Kentarou, Kajiyama, Akihiro, Shimura, Shunsuke, Taketa, Koji, Kimura, Shinichiro, Taguchi, Akihiro, Takayama, Kentaro, Yakushiji, Fumika, Hayashi, Yoshio

    Published in Asian journal of organic chemistry (01-10-2015)
    “…Arginine‐rich, cell‐penetrating peptides (CPPs) and oligoarginines are attractive tools for intracellular delivery of various molecules with low membrane…”
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    Reliability issues of silicon LSIs facing 100-nm technology node by Takeda, Eiji, Murakami, Eiichi, Torii, Kazuyoshi, Okuyama, Yutaka, Ebe, Eishi, Hinode, Kenji, Kimura, Shin'ichiro

    Published in Microelectronics and reliability (01-04-2002)
    “…Reliability issues regarding scaled silicon devices are reviewed from the viewpoint of the 100-nm technology node. Topics covered include hot carrier…”
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    Ultra-Shallow and Abrupt Boron Profiles in Si by δ-Doping Technique by Kujirai, Hiroshi, Murakami, Eiichi, Shin'ichiro Kimura, Shin'ichiro Kimura

    Published in Japanese Journal of Applied Physics (01-02-1995)
    “…Ultra-shallow and abrupt boron (B) profiles in Si are achieved by molecular beam epitaxy, and the thermal stability of these profiles is closely examined…”
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    New selective doping technique for boron using a HBO2 source and a thin oxide mask by Murakami, Eiichi, Kawamura, Yoshio, Kimura, Shin’ichiro

    Published in Applied physics letters (30-05-1994)
    “…Selective adsorption of HBO2 on Si(100) partially covered with thin (≲1 nm) oxide is observed using a Si molecular-beam epitaxy system. The thin oxide is…”
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