Search Results - "Kimura, Shin'ichiro"
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Thick-Strained-Si/Relaxed-SiGe Structure of High-Performance RF Power LDMOSFETs for Cellular Handsets
Published in IEEE transactions on electron devices (01-12-2006)“…A strained-Si/relaxed-SiGe structure was applied to laterally diffused MOSFETs (LDMOSFETs) in order to improve the PAE of cellular handset RF power-amplifier…”
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The dipeptidyl peptidase-4 inhibitor, linagliptin, improves cognitive impairment in streptozotocin-induced diabetic mice by inhibiting oxidative stress and microglial activation
Published in PloS one (07-02-2020)“…Accumulating epidemiological studies have demonstrated that diabetes is an important risk factor for dementia. However, the underlying pathological and…”
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New Method for Evaluating Electric Field at Junctions of DRAM Cell Transistors by Measuring Junction Leakage Current
Published in IEEE transactions on electron devices (01-02-2009)“…A new method for the analysis of dynamic random-access memory (DRAM) data-retention characteristics is developed. We extend a 1-D model of the bias dependence…”
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Aberrant activation of bone marrow Ly6C high monocytes in diabetic mice contributes to impaired glucose tolerance
Published in PloS one (2020)“…Accumulating evidence indicates that diabetes and obesity are associated with chronic low-grade inflammation and multiple organ failure. Tissue-infiltrated…”
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Strained-silicon MOSFETs for analog applications: utilizing a supercritical-thickness strained Layer for low leakage current and high breakdown Voltage
Published in IEEE transactions on electron devices (01-05-2006)“…Strained-silicon MOSFETs with both high breakdown voltage and low leakage current needed for RF/analog applications were investigated. Proper control of…”
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Performance evaluation of case definitions of type 1 diabetes for health insurance claims data in Japan
Published in BMC medical informatics and decision making (11-02-2021)“…No case definition of Type 1 diabetes (T1D) for the claims data has been proposed in Japan yet. This study aimed to evaluate the performance of candidate case…”
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Electro-Luminescence from Ultra-Thin Silicon
Published in Japanese Journal of Applied Physics (01-07-2006)Get full text
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Transport properties of a silicon single-electron transistor at 4.2 K
Published in Applied physics letters (30-01-1995)“…We report on the transport properties of a silicon single-electron transistor at 4.2 K. A quantum dot is formed in the inversion layer of a silicon…”
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Hollow fiber-combined glucose-responsive gel technology as an in vivo electronics-free insulin delivery system
Published in Communications biology (17-06-2020)“…Accumulating evidence demonstrates that not only sustained elevation of blood glucose levels but also the glucose fluctuation represents key determinants for…”
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Rutile-type TiO2 thin film for high-k gate insulator
Published in Thin solid films (31-01-2003)“…Authors investigated rutile-type titanium dioxide (TiO2) films for possible use as a high-k gate insulator. The TiO2 thin films were directly deposited on Si…”
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Local Vth Variability and Scalability in Silicon-on-Thin-BOX (SOTB) CMOS With Small Random-Dopant Fluctuation
Published in IEEE transactions on electron devices (01-04-2010)Get full text
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Silicon light-emitting transistor for on-chip optical interconnection
Published in Applied physics letters (16-10-2006)“…The authors propose a light-emitting field-effect transistor with the active layer made of the ultrathin single crystal silicon with the (100) surface…”
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Strained-silicon MOSFET process technology—control of impurity and germanium atoms at the hetero-interface
Published in Materials science in semiconductor processing (01-02-2005)“…We investigated re-crystallization, the redistribution of arsenic and germanium, and the electrical properties of strained-silicon/Si 0.7Ge 0.3…”
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Eliminating the Threshold-Voltage Offset of p-Channel Metal-Oxide-Semiconductor Field Effect Transistors in High-Density Dynamic Random Access Memory
Published in Japanese Journal of Applied Physics (01-04-2004)“…The threshold voltage offsets of paired p + -gate p-channel metal-oxide-semiconductor field effect transistors in high-density dynamic random access memory is…”
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Development of the Thiol-Selective Solid-Supported Oligoarginine-Conjugating Reagent KSH-2
Published in Asian journal of organic chemistry (01-10-2015)“…Arginine‐rich, cell‐penetrating peptides (CPPs) and oligoarginines are attractive tools for intracellular delivery of various molecules with low membrane…”
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Reliability issues of silicon LSIs facing 100-nm technology node
Published in Microelectronics and reliability (01-04-2002)“…Reliability issues regarding scaled silicon devices are reviewed from the viewpoint of the 100-nm technology node. Topics covered include hot carrier…”
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Ultra-Shallow and Abrupt Boron Profiles in Si by δ-Doping Technique
Published in Japanese Journal of Applied Physics (01-02-1995)“…Ultra-shallow and abrupt boron (B) profiles in Si are achieved by molecular beam epitaxy, and the thermal stability of these profiles is closely examined…”
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New selective doping technique for boron using a HBO2 source and a thin oxide mask
Published in Applied physics letters (30-05-1994)“…Selective adsorption of HBO2 on Si(100) partially covered with thin (≲1 nm) oxide is observed using a Si molecular-beam epitaxy system. The thin oxide is…”
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