Search Results - "Kimukin, Ibrahim"

High Density, Double-Sided, Flexible Optoelectronic Neural Probes With Embedded μLEDs by Reddy, Jay W, Kimukin, Ibrahim, Stewart, Luke T, Ahmed, Zabir, Barth, Alison L, Towe, Elias, Chamanzar, Maysamreza

“…Optical stimulation and imaging of neurons deep in the brain require implantable optical neural probes. External optical access to deeper regions of the brain…”
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Smart Dura: A Monolithic Optoelectrical Surface Array for Neural Interfacing with Primate Cortex by Vargo, Sergio Montalvo, Belloir, Tiphaine, Kimukin, Ibrahim, Ahmed, Zabir, Griggs, Devon J., Stanis, Noah, Yazdan-Shahmorad, Azadeh, Chamanzar, Maysamreza

“…Chronic interfacing with the brain to record and stimulate neural activity with high spatiotemporal resolution is highly desirable to advance the understanding…”
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Flexible optoelectric neural interfaces by Ahmed, Zabir, Reddy, Jay W, Malekoshoaraie, Mohammad H, Hassanzade, Vahid, Kimukin, Ibrahim, Jain, Vishal, Chamanzar, Maysamreza

“…Understanding the neural basis of brain function and dysfunction and designing effective therapeutics require high resolution targeted stimulation and…”
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Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity by Biyikli, Necmi, Aytur, Orhan, Kimukin, Ibrahim, Tut, Turgut, Ozbay, Ekmel

“…We report on the design, fabrication, and characterization of solar-blind Schottky photodiodes with low noise and high detectivity. The devices were fabricated…”
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High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts by Biyikli, Necmi, Kimukin, Ibrahim, Kartaloglu, Tolga, Aytur, Orhan, Ozbay, Ekmel

“…We report AlGaN/GaN-based high-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts. Current–voltage, spectral responsivity, and…”
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High-speed visible-blind GaN-based indium–tin–oxide Schottky photodiodes by Biyikli, Necmi, Kartaloglu, Tolga, Aytur, Orhan, Kimukin, Ibrahim, Ozbay, Ekmel

“…We have fabricated GaN-based high-speed ultraviolet Schottky photodiodes using indium–tin–oxide (ITO) Schottky contacts. Before device fabrication, the optical…”
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High-speed InSb photodetectors on GaAs for mid-IR applications by Kimukin, I., Biyikli, N., Kartaloglu, T., Aytur, O., Ozbay, E.

“…We report p-i-n type InSb-based high-speed photodetectors grown on GaAs substrate. Electrical and optical properties of photodetectors with active areas…”
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InGaAs-based high-performance p-i-n photodiodes by Kimukin, I., Biyikli, N., Butun, B., Aytur, O., Unlu, S.M., Ozbay, E.

“…We have designed, fabricated, and characterized high-speed and high-efficiency InGaAs-based p-i-n photodetectors with a resonant cavity enhanced structure. The…”
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ITO-Schottky photodiodes for high-performance detection in the UV-IR spectrum by Biyikli, N., Kimukin, I., Butun, B., Aytur, O., Ozbay, E.

“…High-performance vertically illuminated Schottky photodiodes with indium-tin-oxide (ITO) Schottky layers were designed, fabricated, and tested. Ternary and…”
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Flexible, Monolithic, High-Density µLED Neural Probes for Simultaneous Optogenetics Stimulation and Recording by Reddy, Jay W., Kimukin, Ibrahim, Towe, Elias, Chamanzar, Maysamreza

“…Modern optogenetic experiments require high spatio-temporal resolution stimulation deep in brain tissue. Implantable optoelectrical neural probes with…”
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High-speed GaAs-based resonant-cavity-enhanced 1.3 μm photodetector by Kimukin, Ibrahim, Ozbay, Ekmel, Biyikli, Necmi, Kartaloǧlu, Tolga, Aytür, Orhan, Unlu, Selim, Tuttle, Gary

“…We report GaAs-based high-speed, resonant-cavity-enhanced, Schottky barrier internal photoemission photodiodes operating at 1.3 μm. The devices were fabricated…”
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GaN μLED Arrays in Parylene C Substrate for Flexible Implantable Optogenetics: Fabrication and Modeling by Reddy, Jay W., Kimukin, Ibrahim, Stewart, Luke T., Ahmed, Zabir, Barth, Alison L., Towe, Elias, Chamanzar, Maysamreza

“…Optoelectronic neural probes with (22 μm × 22 μm) Gallium-Nitride μLED arrays (up to 32 devices) on a Parylene C substrate are fabricated and analyzed using…”
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45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes by Biyikli, N., Kimukin, I., Aytur, O., Gokkavas, M., Selim Unlu, M., Ozbay, E.

“…High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have…”
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High Speed and High Efficiency Infrared Photodetectors by Kimukin, İbrahim

“…The increasing demand for telecommunication systems resulted in production of high performance components. Photodetectors are essential components of…”
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High-speed >90% quantum-efficiency p–i–n photodiodes with a resonance wavelength adjustable in the 795–835 nm range by Özbay, Ekmel, Kimukin, Ïbrahim, Biyikli, Necmi, Aytür, Orhan, Gökkavas, Mutlu, Ulu, Gökhan, Ünlü, M. Selim, Mirin, Richard P., Bertness, Kris A., Christensen, David H.

“…We report GaAs/AlGaAs-based high-speed, high-efficiency, resonant cavity enhanced p–i–n photodiodes. The devices were fabricated by using a…”
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Determination of Surface Depletion Thickness of p-doped Silicon Nanowires Synthesized Using Metal Catalyzed CVD Process by Kimukin, I., Long Do, Islam, M.S., Anwar, A.F.M.

“…An in-depth understanding of the distribution and impact of doping in nanowires is crucial for the rational design of future nanowire based devices synthesized…”
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Unusual Growth of InP Nanowires Grown on Silicon Surfaces by Kimukin, I., Johns, C.D., Edgar, C.W., Islam, M.S., Sungsoo Yi

“…Heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high speed optoelectronic devices with mature Si technology. We…”
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Long Wavelength Gaas Based hot Electron Photoemission Detectors by Kimukin, İbrahim

“…The increasing rate of telecommunication alters both science and technology, and demands high performance components. Photo detectors are essential components…”
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High-performance ITO-AlAs/GaAs based resonant cavity enhanced Schottky photodiodes by Ozbay, E., Biyikli, N., Kimukin, I., Aytur, O.

“…We report our efforts on ITO-AlAs/GaAs based resonant cavity enhanced (RCE) Schottky photodiodes for operation at the first optical communication window (840…”
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