Search Results - "Kimukin, I."

Solar-blind AlGaN-based p-i-n photodiodes with low dark current and high detectivity by Biyikli, N., Kimukin, I., Aytur, O., Ozbay, E.

“…We report solar-blind Al/sub x/Ga/sub 1-x/N-based heterojunction p-i-n photodiodes with low dark current and high detectivity. After the p+ GaN cap layer was…”
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InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition by Yi, S. S., Girolami, G., Amano, J., Saif Islam, M., Sharma, S., Kamins, T. I., Kimukin, I.

“…The heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high-performance III-V materials with Si technology. We…”
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High-speed InSb photodetectors on GaAs for mid-IR applications by Kimukin, I., Biyikli, N., Kartaloglu, T., Aytur, O., Ozbay, E.

“…We report p-i-n type InSb-based high-speed photodetectors grown on GaAs substrate. Electrical and optical properties of photodetectors with active areas…”
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InGaAs-based high-performance p-i-n photodiodes by Kimukin, I., Biyikli, N., Butun, B., Aytur, O., Unlu, S.M., Ozbay, E.

“…We have designed, fabricated, and characterized high-speed and high-efficiency InGaAs-based p-i-n photodetectors with a resonant cavity enhanced structure. The…”
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ITO-Schottky photodiodes for high-performance detection in the UV-IR spectrum by Biyikli, N., Kimukin, I., Butun, B., Aytur, O., Ozbay, E.

“…High-performance vertically illuminated Schottky photodiodes with indium-tin-oxide (ITO) Schottky layers were designed, fabricated, and tested. Ternary and…”
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High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current by Tut, T., Biyikli, N., Kimukin, I., Kartaloglu, T., Aytur, O., Unlu, M.S., Ozbay, E.

“…Al 0.38Ga 0.62N/GaN heterojunction solar-blind Schottky photodetectors with low dark current, high responsivity, and fast pulse response were demonstrated. A…”
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45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes by Biyikli, N., Kimukin, I., Aytur, O., Gokkavas, M., Selim Unlu, M., Ozbay, E.

“…High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have…”
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High-Performance Solar-Blind Photodetectors Based on Al $_rm x$ Ga $_1-rm x$ N Heterostructures by Ozbay, E., Biyikli, N., Kimukin, I., Kartaloglu, T., Tut, T., Aytur, O.

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High-performance solar-blind AlGaN photodetectors by Ozbay, E., Biyikli, N., Kimukin, I., Tut, T., Kartaloglu, T., Aytur, O.

“…The paper reports on research efforts and achievements on high-performance AlGaN-based SB photodiodes (PDs). Schottky, p-i-n, and MSM structures were designed,…”
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High-performance solar-blind photodetectors based on Al/sub x/Ga/sub 1-x/N heterostructures by Ozbay, E., Biyikli, N., Kimukin, I., Kartaloglu, T., Tut, T., Aytur, O.

“…Design, fabrication, and characterization of high-performance Al/sub x/Ga/sub 1-x/N-based photodetectors for solar-blind applications are reported. Al/sub…”
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High-performance solar-blind photodetectors based on Al(x)Ga(1-x)N heterostructures by Ozbay, E, Biyikli, N, Kimukin, I, Kartaloglu, T, Tut, T, Aytur, O

“…Design, fabrication, and characterization of high-performance Al(x)Ga(1-x)N-based photodetectors for solar-blind applications are reported. Al(x)Ga(1-x)N…”
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High-performance solar-blind photodetectors based on AlxGa1-xN heterostructures by Ozbay, E, Biyikli, N, Kimukin, I, Kartaloglu, T, Tut, T, Aytur, O

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High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p–i–n photodiodes by Butun, B., Biyikli, N., Kimukin, I., Aytur, O., Ozbay, E., Postigo, P. A., Silveira, J. P., Alija, A. R.

“…We report the design, growth, fabrication, and characterization of GaAs-based high-speed p–i–n photodiodes operating at 1.55 μm. A low-temperature-grown GaAs…”
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High-performance 1.55 /spl mu/m resonant cavity enhanced photodetector by Kimukin, I., Biyikli, N., Ozbay, K.

“…In conclusion, we have demonstrated highspeed, and high-efficiency resonant cavity enhanced (RCE) InGaAs based p-i-n photodetectors. A peak quantum efficiency…”
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Determination of Surface Depletion Thickness of p-doped Silicon Nanowires Synthesized Using Metal Catalyzed CVD Process by Kimukin, I., Long Do, Islam, M.S., Anwar, A.F.M.

“…An in-depth understanding of the distribution and impact of doping in nanowires is crucial for the rational design of future nanowire based devices synthesized…”
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1.3 pm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector by Biyikli, N., Kimukin, I., Ozbay, E., Tuttle, G.

“…Summary form only given. High-speed photodetectors operating at 1.3 and 1.55 /spl mu/m are important for long distance fiber optic based telecommunication…”
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Unusual Growth of InP Nanowires Grown on Silicon Surfaces by Kimukin, I., Johns, C.D., Edgar, C.W., Islam, M.S., Sungsoo Yi

“…Heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high speed optoelectronic devices with mature Si technology. We…”
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GHz bandwidth-efficiency resonant cavity enhanced ITO-Schottky photodiodes by Biyikli, N., Kimukin, I., Aytur, O., Ozbay, E., Gokkavas, M., Unlu, M.S.

“…We demonstrated high-performance resonant cavity enhanced ITO-Schottky photodiodes. We achieved a peak efficiency of 75% around 820 nm with a 3-dB bandwidth of…”
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High-speed InGaAs based resonant cavity enhanced p-i-n photodiodes by Kimukin, I., Biyikli, N., Ozbay, E.

“…High-speed, high-efficiency photodetectors play an important role in optical communication and measurement systems. The photodiode performance is measured by…”
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High-speed transparent indium-tin-oxide based resonant cavity Schottky photodiode with Si/sub 3/N/sub 4//SiO/sub 2/ top Bragg mirror by Biyikli, N., Kimukin, I., Aytur, O., Ozbay, E., Gokkavas, M., Unlu, S.

“…Summary form only given. Photodetectors demonstrating high bandwidth-efficiency (BWE) products are required for high-performance optical communication and…”
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