Search Results - "Kim, Si Joon"

Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances by Kim, Si Joon, Mohan, Jaidah, Summerfelt, Scott R., Kim, Jiyoung

“…Ferroelectricity in HfO 2 -based materials, especially Hf 0.5 Zr 0.5 O 2 (HZO), is today one of the most attractive topics because of its wide range of…”
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Review of solution-processed oxide thin-film transistors by Kim, Si Joon, Yoon, Seokhyun, Kim, Hyun Jae

“…In this review, we summarize solution-processed oxide thin-film transistors (TFTs) researches based on our fulfillments. We describe the fundamental studies of…”
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Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget by Kim, Si Joon, Narayan, Dushyant, Lee, Jae-Gil, Mohan, Jaidah, Lee, Joy S., Lee, Jaebeom, Kim, Harrison S., Byun, Young-Chul, Lucero, Antonio T., Young, Chadwin D., Summerfelt, Scott R., San, Tamer, Colombo, Luigi, Kim, Jiyoung

“…We report on atomic layer deposited Hf0.5Zr0.5O2 (HZO)-based capacitors which exhibit excellent ferroelectric (FE) characteristics featuring a large switching…”
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Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films by Kim, Si Joon, Mohan, Jaidah, Lee, Jaebeom, Lee, Joy S., Lucero, Antonio T., Young, Chadwin D., Colombo, Luigi, Summerfelt, Scott R., San, Tamer, Kim, Jiyoung

“…We report on the effect of the Hf0.5Zr0.5O2 (HZO) film thickness on the ferroelectric and dielectric properties using pulse write/read measurements. HZO films…”
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Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors by Kim, Si Joon, Mohan, Jaidah, Kim, Harrison Sejoon, Lee, Jaebeom, Young, Chadwin D., Colombo, Luigi, Summerfelt, Scott R., San, Tamer, Kim, Jiyoung

“…In this letter, the ferroelectric (FE) properties of 5-nm-thick Hf0.5Zr0.5O2 (HZO) films deposited by atomic layer deposition have been investigated. By…”
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Activation of sputter-processed indium–gallium–zinc oxide films by simultaneous ultraviolet and thermal treatments by Tak, Young Jun, Du Ahn, Byung, Park, Sung Pyo, Kim, Si Joon, Song, Ae Ran, Chung, Kwun-Bum, Kim, Hyun Jae

“…Indium–gallium–zinc oxide (IGZO) films, deposited by sputtering at room temperature, still require activation to achieve satisfactory semiconductor…”
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A solution-processed quaternary oxide system obtained at low-temperature using a vertical diffusion technique by Yoon, Seokhyun, Kim, Si Joon, Tak, Young Jun, Kim, Hyun Jae

“…We report a method for fabricating solution-processed quaternary In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) at low annealing temperatures using a vertical…”
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Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing by Kim, Si Joon, Jung, Yong Chan, Mohan, Jaidah, Kim, Hyo Jeong, Rho, Sung Min, Kim, Min Seong, Yoo, Jeong Gyu, Park, Hye Ryeon, Hernandez-Arriaga, Heber, Kim, Jin-Hyun, Kim, Hyung Tae, Choi, Dong Hyun, Jung, Joohye, Hwang, Su Min, Sejoon Kim, Harrison, Kim, Hyun Jae, Kim, Jiyoung

“…In this Letter, a high-pressure annealing (HPA) process is proposed as a way to reduce the thermal budget of Hf0.5Zr0.5O2 (HZO) thin films with ferroelectric…”
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Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications by Kim, Hyo Jeong, An, Yonghwan, Jung, Yong Chan, Mohan, Jaidah, Yoo, Jeong Gyu, Kim, Young In, Hernandez-Arriaga, Heber, Kim, Harrison Sejoon, Kim, Jiyoung, Kim, Si Joon

“…Since the first report on the unexpected ferroelectricity of fluorite‐structure oxides in 2011, this topic has provided a pathway for new research directions…”
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A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films by Kim, Si Joon, Mohan, Jaidah, Kim, Harrison Sejoon, Hwang, Su Min, Kim, Namhun, Jung, Yong Chan, Sahota, Akshay, Kim, Kihyun, Yu, Hyun-Yong, Cha, Pil-Ryung, Young, Chadwin D., Choi, Rino, Ahn, Jinho, Kim, Jiyoung

“…The discovery of ferroelectricity in HfO2-based materials in 2011 provided new research directions and opportunities. In particular, for atomic layer deposited…”
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Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by Kim, Si Joon, Mohan, Jaidah, Kim, Harrison Sejoon, Lee, Jaebeom, Hwang, Su Min, Narayan, Dushyant, Lee, Jae-Gil, Young, Chadwin D., Colombo, Luigi, Goodman, Gary, Wan, Alan S., Cha, Pil-Ryung, Summerfelt, Scott R., San, Tamer, Kim, Jiyoung

“…The ferroelectric (FE) properties of 10-nm-thick Hf0.5Zr0.5O2 (HZO) films deposited by an atomic layer deposition technique were improved by adopting O3 as an…”
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Low-Cost Label-Free Electrical Detection of Artificial DNA Nanostructures Using Solution-Processed Oxide Thin-Film Transistors by Kim, Si Joon, Jung, Joohye, Lee, Keun Woo, Yoon, Doo Hyun, Jung, Tae Soo, Dugasani, Sreekantha Reddy, Park, Sung Ha, Kim, Hyun Jae

“…A high-sensitivity, label-free method for detecting deoxyribonucleic acid (DNA) using solution-processed oxide thin-film transistors (TFTs) was developed…”
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Label-Free Flexible DNA Biosensing System Using Low-Temperature Solution-Processed In-Zn-O Thin-Film Transistors by Joohye Jung, Si Joon Kim, Tae Soo Jung, Jaewon Na, Doo Hyun Yoon, Sabri, Mardhiah Muhamad, Hyun Jae Kim

“…We investigated a novel deoxyribonucleic acid (DNA) sensing system based on low-temperature solution-processed In-Zn-O (IZO) thin-film transistors (TFTs)…”
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Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source by Jung, Yong Chan, Hwang, Su Min, Le, Dan N., Kondusamy, Aswin L. N., Mohan, Jaidah, Kim, Sang Woo, Kim, Jin Hyun, Lucero, Antonio T., Ravichandran, Arul, Kim, Harrison Sejoon, Kim, Si Joon, Choi, Rino, Ahn, Jinho, Alvarez, Daniel, Spiegelman, Jeff, Kim, Jiyoung

“…Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175–350 °C. The thin films were deposited using…”
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Artificial DNA nanostructure detection using solution-processed In-Ga-Zn-O thin-film transistors by Kim, Si Joon, Kim, Byeonghoon, Jung, Joohye, Yoon, Doo Hyun, Lee, Junwye, Park, Sung Ha, Kim, Hyun Jae

“…A method for detecting artificial DNA using solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) was developed. The IGZO TFT had a field-effect…”
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A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition by Jung, Yong Chan, Mohan, Jaidah, Hwang, Su Min, Kim, Jin-Hyun, Le, Dan N., Sahota, Akshay, Kim, Namhoon, Hernandez-Arriaga, Heber, Veyan, Jean-Francois, Kim, Harrison Sejoon, Kim, Si Joon, Choi, Rino, Kim, Jiyoung

“…Since HfO2‐based ferroelectric films were reported in 2011, several doping/alloying elements have been introduced to secure interesting…”
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Hole Transport Enhancing Effects of Polar Solvents on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonic acid) for Organic Solar Cells by Yang, Jeong Suk, Oh, Sang Hoon, Kim, Dong Lim, Kim, Si Joon, Kim, Hyun Jae

“…This study analyzed the properties of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) thin-films prepared by spin-coating solutions…”
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Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors by Sahota, Akshay, Kim, Harrison Sejoon, Mohan, Jaidah, Le, Dan N., Jung, Yong Chan, Kim, Si Joon, Lee, Jang-Sik, Ahn, Jinho, Hernandez-Arriaga, Heber, Kim, Jiyoung

“…In this work, a nano-polycrystalline Ag-doped ZnO-based threshold switching (TS) selector via a facile co-sputtering technique is investigated without using an…”
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Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2‑Based Metal-Ferroelectric-Metal Capacitors by Mohan, Jaidah, Jung, Yong Chan, Hernandez-Arriaga, Heber, Kim, Jin-Hyun, Onaya, Takashi, Sahota, Akshay, Hwang, Su Min, Le, Dan N, Kim, Jiyoung, Kim, Si Joon

“…Ferroelectricity in Hf0.5Zr0.5O2 (HZO) has garnered increasing interest due to its potential applications in neuromorphic and nonvolatile memory devices…”
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Replacement and Rearrangement of an Oxide Lattice by Germanium Doping in Solution-Processed Indium-Zinc-Oxide Thin-Film Transistors by Tae Soo Jung, Si Joon Kim, Chul Ho Kim, Joohye Jung, Jaewon Na, Sabri, Mardhiah Muhamad, Hyun Jae Kim

“…Germanium (Ge) doping effects on solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs) were investigated. Ge doping increased the carrier…”
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