Search Results - "Kim, Sangsig"
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Neural oscillation of single silicon nanowire neuron device with no external bias voltage
Published in Scientific reports (03-03-2022)“…In this study, we perform simulations to demonstrate neural oscillations in a single silicon nanowire neuron device comprising a gated p–n–p–n diode structure…”
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2
Polarity control of carrier injection for nanowire feedback field-effect transistors
Published in Nano research (01-10-2019)“…We present polarity control of the carrier injection for a feedback field-effect transistor (FBFET) with a selectively thinned p + -i-n + Si nanowire (SiNW)…”
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3
Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor
Published in Scientific reports (29-01-2019)“…The change of electrical performance of amorphous SiZnSnO thin film transistors (a-SZTO TFTs) has been investigated depending on various metal capping layers…”
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4
Binarized neural network of diode array with high concordance to vector–matrix multiplication
Published in Scientific reports (11-03-2024)“…In this study, a binarized neural network (BNN) of silicon diode arrays achieved vector–matrix multiplication (VMM) between the binarized weights and inputs in…”
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5
New ternary inverter with memory function using silicon feedback field-effect transistors
Published in Scientific reports (28-07-2022)“…In this study, we present a fully complementary metal–oxide–semiconductor-compatible ternary inverter with a memory function using silicon feedback…”
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6
Universal logic-in-memory cell enabling all basic Boolean algebra logic
Published in Scientific reports (22-11-2022)“…Among the promising approaches for implementing high-performance computing, reconfigurable logic gates and logic-in-memory (LIM) approaches have been drawing…”
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7
Logic and memory functions of an inverter comprising reconfigurable double gated feedback field effect transistors
Published in Scientific reports (22-07-2022)“…In this study, we propose an inverter consisting of reconfigurable double-gated (DG) feedback field-effect transistors (FBFETs) and examine its logic and…”
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8
One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors
Published in Scientific reports (09-09-2021)“…In this study, we fabricated a 2 × 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors…”
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9
Static Random Access Memory Characteristics of Single-Gated Feedback Field-Effect Transistors
Published in IEEE transactions on electron devices (01-01-2019)“…In this paper, we propose a novel static random access memory (SRAM) unit cell design and its array structure consisting of single-gated feedback field-effect…”
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10
Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure
Published in Scientific reports (18-03-2024)“…In this study, we demonstrate binary and ternary logic-in-memory (LIM) operations of inverters and NAND and NOR gates comprising nanosheet (NS) feedback…”
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11
Flexible Thermoelectric Generators Composed of n‐and p‐Type Silicon Nanowires Fabricated by Top‐Down Method
Published in Advanced energy materials (01-04-2017)“…This study demonstrates the fabrication and characterization of a flexible thermoelectric (TE) power generator composed of silicon nanowires (SiNWs) fabricated…”
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12
Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
Published in Scientific reports (20-09-2021)“…In this study, we examine the electrical characteristics of silicon nanowire feedback field-effect transistors (FBFETs) with interface trap charges between the…”
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13
NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors
Published in Scientific reports (07-03-2022)“…The processing of large amounts of data requires a high energy efficiency and fast processing time for high-performance computing systems. However,…”
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14
Electrical and mechanical characteristics of fully transparent IZO thin-film transistors on stress-relieving bendable substrates
Published in Applied physics letters (03-10-2016)“…In this study, we report the electrical and mechanical characteristics of fully transparent indium zinc oxide (IZO) thin-film transistors (TFTs) fabricated on…”
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15
Logic‐in‐Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double‐Gated Feedback Field‐Effect Transistors
Published in Advanced electronic materials (01-04-2023)“…In this study, the logic‐in‐memory operations are demonstrated of ternary NAND and NOR logic gates consisting of double‐gated feedback field‐effect…”
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16
Stateful Logic Operation of Gated Silicon Diodes for In‐Memory Computing
Published in Advanced electronic materials (01-07-2024)“…In‐memory computing significantly reduces workload and energy cost of data access in the traditional von Neumann computing architecture. Using various…”
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17
Binarized Neural Network Comprising Quasi‐Nonvolatile Memory Devices for Neuromorphic Computing
Published in Advanced electronic materials (01-09-2024)“…This study presents a binarized neural network (BNN) comprising quasi‐nonvolatile memory (QNVM) devices that operate in a positive feedback loop mechanism and…”
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18
Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors
Published in Micromachines (Basel) (28-05-2023)“…Challenges in scaling dynamic random-access memory (DRAM) have become a crucial problem for implementing high-density and high-performance memory devices…”
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19
NOR logic function of a bendable combination of tunneling field-effect transistors with silicon nanowire channels
Published in Nano research (01-02-2016)“…In this study, we propose a novel combination of tunneling field-effect transistors (TFETs) with asymmetrically doped p^+-i-n^+ silicon nanowire (SiNW)…”
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20
Effects of Interface States on Electrical Characteristics of Feedback Field-Effect Transistors
Published in IEEE access (2023)“…In this study, we examine the effect of interface trap states on the electrical characteristics of single-gated feedback field-effect transistors (FBFETs)…”
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