Search Results - "Kim, Ryun Na"

Facile Fabrication of ZnO-ZnFe2O4 Hollow Nanostructure by a One-Needle Syringe Electrospinning Method for a High-Selective H2S Gas Sensor by Park, Kee-Ryung, Kim, Ryun Na, Song, Yoseb, Kwon, Jinhyeong, Choi, Hyeunseok

“…Herein, a facile fabrication process of ZnO-ZnFe2O4 hollow nanofibers through one-needle syringe electrospinning and the following calcination process is…”
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Photocatalyst Design Principles for Photocatalytic Hydrogen Production and Benzyl Alcohol Oxidation with CdS Nanosheets by Kim, Ryun Na, Kim, Jihun, Kim, Gui-Min, Lee, Doh C., Kim, Whi Dong

“…To produce hydrogen using photocatalysts while maintaining environmentally friendly characteristics, research has focused on using benzyl alcohol (BzOH) as a…”
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Dipole formation and electrical properties of high-k/SiO2 interface according to the density of SiO2 interfacial layer by Yun, Hye Won, Lee, Jinho, Kim, Ryun Na, Ji, Seung Hwan, Ryu, Sang Ouk, Kim, Woo-Byoung

“…The effect of SiO₂ buffer layers with various atomic densities on the interface dipole of high-k/SiO2 is confirmed. An ultrathin SiO₂ layer is formed on Si…”
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Dipole Formation and Electrical Properties According to SiO2 Layer Thickness at an Al2O3/SiO2 Interface by Kim, Ryun Na, Yun, Hye Won, Lee, Jinho, Kim, Woo-Byoung

“…Interfacial and electrical properties of Al2O3/SiO2/Si were analyzed to determine the change in interfacial defects and suboxide density according to the…”
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Effect of SiO2 passivation layer on nanoporous Si photocathode under the density of SiO2 passivation layer by Kim, Ryun Na, Kim, Won Jin, Lee, Donghee, Seo, Dong Hyeok, Ryu, Sang Ouk, Kim, Woo-Byoung

“…[Display omitted] •NAOS forms a thin layer (2.36 nm) of SiO2 with high density (3.855 g/cm3).•NAOS-SiO2 (0.0581 A/cm2) is more effective in reducing leakage…”
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Optimization of Si photocathode formation conditions through correlation between saw damage removal and black Si by Kim, Ryun Na, Kim, Won Jin, Seo, Dong Hyeok, Ryu, Sang Ouk, Kim, Woo-Byoung

“…[Display omitted] •The SDR process affects the removal of defects and the forming of uniform structures.•The reflectance of black Si decreased by 96% compared…”
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Development of eco-friendly thin film manufacturing process using poeroxo titanium complex solution and potential for resistive random access memory by Lee, Jinho, Kim, Ryun Na, Park, Kee-Ryung, Kim, Woo-Byoung

“…[Display omitted] •The TiN/TiO2/FTO RRAM was investigated through a green solution-based process.•The PTC-sol shows excellent adhesion properties on the…”
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Dipole Formation and Electrical Properties According to SiO 2 Layer Thickness at an Al 2 O 3 /SiO 2 Interface by Kim, Ryun Na, Yun, Hye Won, Lee, Jinho, Kim, Woo-Byoung

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Fabrication of low interface dipole layer on Al2O3/SiO2/Si structure by densification of interfacial layer by Kim, Ryun Na, Yun, Hye Won, Lee, Jinho, Baek, Seong-Ho, Kim, Woo-Byoung

“…Interfacial defects and electrical characteristics were analyzed to confirm the formation of dipole due to the densification of the SiO2 buffer layer and the…”
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Production of silicon nanoparticles and surface modification through photochemical nanocatalysis reaction by Seo, Dong Hyeok, Kim, Ryun Na, Yim, Hyeonmin, Oh, Seung-Hwan, Kim, Woo-Byoung

“…In this research, a novel method for manufacturing silicon (Si) nanoparticles (NPs) has been proposed. The process involves the use of ultraviolet (UV)…”
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Enhanced photoelectrochemical performance of Si/TiO2 with a high atomic density SiO2 buffer layer by Kim, Ryun Na, Han, Do Hyung, Yun, Hye Won, Lee, Jinho, Ryu, Sang Ouk, Kim, Woo-Byoung

“…[Display omitted] •Interfacial defects caused by lattice mismatch removed by inserting a SiO2 layer.•Residual electrical defect removal of…”
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Facile Fabrication of ZnO-ZnFe 2 O 4 Hollow Nanostructure by a One-Needle Syringe Electrospinning Method for a High-Selective H 2 S Gas Sensor by Park, Kee-Ryung, Kim, Ryun Na, Song, Yoseb, Kwon, Jinhyeong, Choi, Hyeunseok

“…Herein, a facile fabrication process of ZnO-ZnFe O hollow nanofibers through one-needle syringe electrospinning and the following calcination process is…”
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