Search Results - "Kim, Kijoon H. P."
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Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices
Published in Applied physics letters (11-05-2009)“…Phase change materials in phase change random access memory (PRAM) undergo very high electrical stress as well as thermal stress during operation. These can…”
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2
Thermoelectric heating of Ge2Sb2Te5 in phase change memory devices
Published in Applied physics letters (22-03-2010)“…We report on the demonstration of the active thermoelectric application to nanometer-scaled semiconductor devices. The thermoelectric heating already exists…”
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3
Fullerene thermal insulation for phase change memory
Published in Applied physics letters (07-01-2008)“…Phase change random access memory (PRAM) is unique among semiconductor devices because heat is intrinsic to the operation of the device, not just a by-product…”
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4
Low thermal conductivity in Ge2Sb2Te5–SiOx for phase change memory devices
Published in Applied physics letters (15-06-2009)“…Nanometer scale Ge2Sb2Te5 (GST) domains formed by immiscible mixture of GST-SiOx at room temperature and 180 °C show remarkable suppression in electrical and…”
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5
Rapid crystallization of GeTe–Bi2Te3 mixed layer
Published in Applied physics letters (10-03-2008)“…We report rapid crystallization of GeTe–Bi2Te3 mixed layers. The as-deposited (GeTe)1−x(Bi2Te3)x (GBT) layers with x>0.5 are fcc crystalline, while the layers…”
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6
Effect of indium on phase-change characteristics and local chemical states of In-Ge-Sb-Te alloys
Published in Applied physics letters (14-07-2008)“…We introduce single-phase In-Ge-Sb-Te (IGST) quaternary thin film (fcc structure when crystallized) deposited by cosputtering from Ge 2 Sb 2 Te 5 ( GST ) and…”
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7
Effect of sintering temperature under high pressure on the superconductivity of MgB2
Published in Applied physics letters (25-06-2001)“…We report on the effect of sintering temperature on the superconductivity of MgB2 pellets prepared under a high pressure of 3 GPa. The superconducting…”
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8
Hole carrier in MgB2 characterized by Hall measurements
Published in Applied physics letters (13-08-2001)“…The longitudinal resistivity (ρxx) and Hall coefficient (RH) were measured for MgB2 sintered under high pressure. We found that RH is positive like cuprate…”
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9
Valence band structures of the phase change material Ge2Sb2Te5
Published in Applied physics letters (17-12-2007)“…We report the experimental evidence of significant change of the valence band structure during crystallization of Ge2Sb2Te5 (GST). Amorphous GST, prepared by…”
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Journal Article -
10
Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications
Published in Applied physics letters (08-01-2007)“…Electrical characteristics of Ge2Sb2Te5 (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by…”
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Journal Article -
11
Thermoelectric heating of Ge 2 Sb 2 Te 5 in phase change memory devices
Published in Applied physics letters (26-03-2010)“…We report on the demonstration of the active thermoelectric application to nanometer-scaled semiconductor devices. The thermoelectric heating already exists…”
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Journal Article -
12
Rapid crystallization of Ge Te - Bi 2 Te 3 mixed layer
Published in Applied physics letters (11-03-2008)“…We report rapid crystallization of Ge Te - Bi 2 Te 3 mixed layers. The as-deposited ( Ge Te ) 1 − x ( Bi 2 Te 3 ) x (GBT) layers with x > 0.5 are fcc…”
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Journal Article -
13
Direct evidence of phase separation in Ge 2 Sb 2 Te 5 in phase changememory devices
Published in Applied physics letters (13-05-2009)“…Phase change materials in phase change random access memory (PRAM) undergo very high electrical stress as well as thermal stress during operation. These can…”
Get full text
Journal Article -
14
Low thermal conductivity in Ge 2 Sb 2 Te 5 - SiO x for phase changememory devices
Published in Applied physics letters (15-06-2009)“…Nanometer scale Ge 2 Sb 2 Te 5 (GST) domains formed by immiscible mixture of GST-SiO x at room temperature and 180 ° C show remarkable suppression in…”
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Journal Article -
15
Nonvolatile switching characteristics of laser-ablated Ge 2 Sb 2 Te 5 nanoparticles for phase-change memory applications
Published in Applied physics letters (08-01-2007)“…Electrical characteristics of Ge 2 Sb 2 Te 5 (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were…”
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Journal Article -
16
Valence band structures of the phase change material Ge 2 Sb 2 Te 5
Published in Applied physics letters (17-12-2007)“…We report the experimental evidence of significant change of the valence band structure during crystallization of Ge 2 Sb 2 Te 5 (GST). Amorphous GST, prepared…”
Get full text
Journal Article -
17
High Current-Carrying Capability in c -Axis-Oriented Superconducting MgB{sub 2} Thin Films
Published in Physical review letters (20-08-2001)“…In high-quality c -axis-oriented MgB{sub 2} thin films, we observed high critical current densities (J{sub c} ) of {approx}16 MA/cm{sup 2} at 15K under…”
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18
Growth and transport properties of c-axis-oriented MgB sub(2) thin films
Published in Physica. C, Superconductivity (01-10-2002)“…We report the growth of high quality c-axis-oriented MgB sub(2) thin films on Al sub(2)O sub(3) substrates by using a pulsed laser deposition technique. The…”
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19
High Current-Carrying Capability in c -Axis-Oriented Superconducting MgB 2 Thin Films
Published in Physical review letters (01-08-2001)Get full text
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20