Search Results - "Kim, Hyunggon"

256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers by Kang, Dongku, Jeong, Woopyo, Kim, Chulbum, Kim, Doo-Hyun, Cho, Yong Sung, Kang, Kyung-Tae, Ryu, Jinho, Kang, Kyung-Min, Lee, SungYeon, Kim, Wandong, Lee, Hanjun, Yu, Jaedoeg, Choi, Nayoung, Jang, Dong-Su, Lee, Cheon An, Min, Young-Sun, Kim, Moo-Sung, Park, An-Soo, Son, Jae-Ick, Kim, In-Mo, Kwak, Pansuk, Jung, Bong-Kil, Lee, Doo-Sub, Kim, Hyunggon, Ihm, Jeong-Don, Byeon, Dae-Seok, Lee, Jin-Yup, Park, Ki-Tae, Kyung, Kye-Hyun

“…A 48 WL stacked 256-Gb V-NAND flash memory with a 3 b MLC technology is presented. Several vertical scale-down effects such as deteriorated WL loading and…”
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A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface by KIM, Chulbum, RYU, Jinho, LEE, Dooseop, KWAK, Pansuk, CHO, Seongsoon, YIM, Yongsik, CHO, Changhyun, JEONG, Woopyo, PARK, Kwangil, HAN, Jin-Man, SONG, Duheon, KYUNG, Kyehyun, LEE, Taesung, LIM, Young-Ho, JUN, Young-Hyun, KIM, Hyunggon, LIM, Jaewoo, JEONG, Jaeyong, SEO, Seonghwan, JEON, Hongsoo, KIM, Bokeun, LEE, Inyoul

“…A monolithic 64 Gb MLC NAND flash based on 21 nm process technology has been developed. The device consists of 4-plane arrays and provides page size of up to…”
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A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory by Kim, Chulbum, Kim, Doo-Hyun, Jeong, Woopyo, Kim, Hyun-Jin, Park, Il Han, Park, Hyun-Wook, Lee, JongHoon, Park, JiYoon, Ahn, Yang-Lo, Lee, Ji Young, Kim, Seung-Bum, Yoon, Hyunjun, Yu, Jae Doeg, Choi, Nayoung, Kim, NaHyun, Jang, Hwajun, Park, JongHoon, Song, Seunghwan, Park, YongHa, Bang, Jinbae, Hong, Sanggi, Choi, Youngdon, Kim, Moo-Sung, Kim, Hyunggon, Kwak, Pansuk, Ihm, Jeong-Don, Byeon, Dae Seok, Lee, Jin-Yub, Park, Ki-Tae, Kyung, Kye-Hyun

“…A 64-word-line-stacked 512-Gb 3-b/cell 3-D NAND flash memory is presented. After briefly examining the challenges that occur to a stack, several technologies…”
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13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate by Jung, Wontaeck, Kim, Hyunggon, Kim, Do-Bin, Kim, Tae-Hyun, Lee, Namhee, Shin, Dongjin, Kim, Minyoung, Rho, Youngsik, Lee, Hun-Jong, Hyun, Yujin, Park, Jaeyoung, Kim, Taekyung, Kim, Hwiwon, Lee, Gyeongwon, Lee, Jisang, Jang, Joonsuc, Park, Jungmin, Kim, Sion, Jeon, Su Chang, Kim, Suyong, Song, Jung-Ho, Kim, Min-Seok, Lee, Taesung, Chun, Byung-Kwan, Kim, Tongsung, Lee, Young Gyu, Lee, Hokil, Lee, Soowoong, Lee, Hwaseok, Cho, Dooho, Nam, Sang-Wan, Kim, Yeomyung, Yoon, Kunyong, Lee, Yoonjae, Kim, Sunghoon, Hwang, Jungseok, Song, Raehyun, Jang, Hyunsik, Son, Jaeick, Jeon, Hongsoo, Lee, Myunghun, Lee, Mookyung, Kim, Kisung, Lee, Eungsuk, Lee, Myeongwoo, Jo, Sungkyu, Kim, Chan Ho, Park, Jong Chul, Yun, Kyunghwa, Seol, Soonock, Cho, Ji-Ho, Lee, Seungjae, Lee, Jin-Yub, Hur, Sung-Hoi

“…3D-NAND Flash memory is evaluated as a key device that is handling the explosive data growth, showing steady bit growth and areal density increases >30% every…”
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13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate by Kim, Doo-Hyun, Kim, Hyunggon, Yun, Sungwon, Song, Youngsun, Kim, Jisu, Joe, Sung-Min, Kang, Kyung-Hwa, Jang, Joonsuc, Yoon, Hyun-Jun, Lee, Kanabin, Kim, Minseok, Kwon, Joonsoo, Jo, Jonghoo, Park, Sehwan, Park, Jiyoon, Cho, Jisoo, Park, Sohyun, Kim, Garam, Bang, Jinbae, Kim, Heejin, Park, Jongeun, Lee, Deokwoo, Lee, Seonyong, Jang, Hwajun, Lee, Han-Jun, Shin, Donghyun, Park, Jungmin, Kim, Jungkwan, Kim, Jongmin, Jang, Kichang, Park, II Han, Moon, Seuna Hyun, Choi, Myung-Hoon, Kwak, Pansuk, Park, Joo-Yona, Choi, Youngdon, Kim, Sang-Lok, Lee, Seungjae, Kang, Dongku, Lim, Jeong-Don, Byeon, Dae-Seok, Song, Kiwhan, Choi, Junghwan, Hwang, Sang Joon, Jeong, Jaeheon

“…3D NAND flash memory has enhanced its areal density by more than 50% per year by virtue of the aggressive development of 3D WL stacking technology for the…”
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11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory by Kim, Chulbum, Cho, Ji-Ho, Jeong, Woopyo, Park, Il-han, Park, Hyun-Wook, Kim, Doo-Hyun, Kang, Daewoon, Lee, Sunghoon, Lee, Ji-Sang, Kim, Wontae, Park, Jiyoon, Ahn, Yang-lo, Lee, Jiyoung, Lee, Jong-hoon, Kim, Seungbum, Yoon, Hyun-Jun, Yu, Jaedoeg, Choi, Nayoung, Kwon, Yelim, Kim, Nahyun, Jang, Hwajun, Park, Jonghoon, Song, Seunghwan, Park, Yongha, Bang, Jinbae, Hong, Sangki, Jeong, Byunghoon, Kim, Hyun-Jin, Lee, Chunan, Min, Young-Sun, Lee, Inryul, Kim, In-Mo, Kim, Sung-Hoon, Yoon, Dongkyu, Kim, Ki-Sung, Choi, Youngdon, Kim, Moosung, Kim, Hyunggon, Kwak, Pansuk, Ihm, Jeong-Don, Byeon, Dae-Seok, Lee, Jin-yub, Park, Ki-Tae, Kyung, Kye-hyun

“…The advent of emerging technologies such as cloud computing, big data, the internet of things and mobile computing is producing a tremendous amount of data. In…”
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7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers by Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Jeong-Don Ihm, Doogon Kim, Young-Sun Min, Moo-Sung Kim, An-Soo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doo-Sub Lee, Hyunggon Kim, Hyang-Ja Yang, Dae-Seok Byeon, Ki-Tae Park, Kye-Hyun Kyung, Jeong-Hyuk Choi

“…Today's explosive demand for data transfer is accelerating the development of non-volatile memory with even larger capacity and cheaper cost. Since the…”
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7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate by Seungjae Lee, Jin-yub Lee, Il-han Park, Jongyeol Park, Sung-won Yun, Min-su Kim, Jong-hoon Lee, Minseok Kim, Kangbin Lee, Taeeun Kim, Byungkyu Cho, Dooho Cho, Sangbum Yun, Jung-no Im, Hyejin Yim, Kyung-hwa Kang, Suchang Jeon, Sungkyu Jo, Yang-lo Ahn, Sung-Min Joe, Suyong Kim, Deok-kyun Woo, Jiyoon Park, Hyun-wook Park, Youngmin Kim, Jonghoon Park, Yongsu Choi, Hirano, Makoto, Jeong-Don Ihm, Byunghoon Jeong, Seon-Kyoo Lee, Moosung Kim, Hokil Lee, Sungwhan Seo, Hongsoo Jeon, Chan-ho Kim, Hyunggon Kim, Jintae Kim, Yongsik Yim, Hoosung Kim, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kye-hyun Kyung, Jeong-Hyuk Choi

“…NAND flash memory is widely used as a cost-effective storage with high performance [1-2]. This paper presents a 128Gb multi-level cell (MLC) NAND flash memory…”
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A 159mm2 32nm 32Gb MLC NAND-flash memory with 200MB/s asynchronous DDR interface by Hyunggon Kim, Jung-hoon Park, Ki-Tae Park, Pansuk Kwak, Ohsuk Kwon, Chulbum Kim, Younyeol Lee, Sangsoo Park, Kyungmin Kim, Doohyun Cho, Juseok Lee, Jungho Song, Soowoong Lee, Hyukjun Yoo, Sanglok Kim, Seungwoo Yu, Sungjun Kim, Sungsoo Lee, Kyehyun Kyung, Yong-Ho Lim, Chilhee Chung

“…We present a 159 mm 2 32 Gb MLC NAND Flash that is capable of 200 MB/S read and 12 MB/S write throughputs in 32 nm technology. This performance is achieved by…”
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