Search Results - "Kim, Choul‐Young"
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1
Single-Antenna FMCW Radar CMOS Transceiver IC
Published in IEEE transactions on microwave theory and techniques (01-03-2017)“…This paper presents a CMOS transceiver IC for a single-antenna frequency-modulated continuous wave (FMCW) radar. Since transmitter (Tx) leakage is critical in…”
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2
6.7-15.3 GHz, High-Performance Broadband Low-Noise Amplifier With Large Transistor and Two-Stage Broadband Noise Matching
Published in IEEE microwave and wireless components letters (01-08-2021)“…This letter presents a fully integrated wideband, ultralow average noise figure (NF), low power consumption, compact, and electrostatic discharge protected…”
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3
Ultralow-Noise Figure and High Gain Ku-Band Bulk CMOS Low-Noise Amplifier With Large-Size Transistor
Published in IEEE microwave and wireless components letters (01-01-2021)“…This letter presents a fully integrated Ku -band low-noise amplifier (LNA) with a large-size transistor using 65-nm bulk complementary…”
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4
A 25-30-GHz Asymmetric SPDT Switch for 5G Applications in 65-nm Triple-Well CMOS
Published in IEEE microwave and wireless components letters (01-06-2019)“…This letter presents a novel asymmetric single-pole double-throw (SPDT) triple-well CMOS TRx switch for 5G applications at millimeter-wave (mm-wave)…”
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5
ISO26262-Compliant Inductive Long-Stroke Linear-Position Sensors as an Alternative to Hall-Based Sensors for Automotive Applications
Published in Sensors (Basel, Switzerland) (26-12-2022)“…To ensure safety, vehicle companies require position sensors that maintain accuracy and avoid target loss even in harsh automotive environments. Most vehicle…”
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6
Design of 94-GHz Highly Efficient Frequency Octupler Using 47-GHz Current-Reusing Class-C Frequency Quadrupler
Published in IEEE transactions on microwave theory and techniques (01-02-2020)“…A 94-GHz highly efficient frequency octupler (×8) is presented, which consists of a 47-GHz frequency quadrupler followed by a 94-GHz push-push frequency…”
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7
79-GHz Digital Attenuator-Based Variable-Gain Vector-Sum Phase Shifter With High Linearity
Published in IEEE microwave and wireless components letters (01-08-2018)“…A 79-GHz variable-gain vector-sum phase shifter is presented, which consists of 5-bit digital attenuators in respective I and Q paths. It is designed to…”
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8
A 76-84-GHz 16-Element Phased-Array Receiver With a Chip-Level Built-In Self-Test System
Published in IEEE transactions on microwave theory and techniques (01-08-2013)“…This paper presents a 16-element phased-array receiver for 76-84-GHz applications with built-in self-test (BIST) capabilities. The chip contains an…”
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9
A 25-GHz Power Amplifier Using Three-Stage Antiphase Linearization in Bulk 65-nm CMOS Technology
Published in IEEE microwave and wireless components letters (01-05-2020)“…This letter presents a 25-GHz power amplifier (PA) in bulk 65-nm CMOS technology. To ensure improved efficiency, the proposed PA was implemented using a…”
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10
A Low Switching Noise and High-Efficiency Buck Converter Using a Continuous-Time Reconfigurable Delta-Sigma Modulator
Published in IEEE transactions on power electronics (01-12-2018)“…This paper presents a delta-sigma modulation control scheme for buck converters that features a reconfigurable loop filter with a scalable sampling frequency…”
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11
A Digital Shade-Matching Device for Dental Color Determination Using the Support Vector Machine Algorithm
Published in Sensors (Basel, Switzerland) (12-09-2018)“…In this study, we developed a digital shade-matching device for dental color determination using the support vector machine (SVM) algorithm. Shade-matching was…”
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12
A 79-GHz Adaptive-Gain and Low-Noise UWB Radar Receiver Front-End in 65-nm CMOS
Published in IEEE transactions on microwave theory and techniques (01-03-2016)“…A 79-GHz adaptive-gain and low-noise ultra-wideband radar receiver RF front-end integrated circuit in 65-nm CMOS is presented in this paper. The receiver…”
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13
Ultralow Noise Figure and Broadband CMOS LNA With Three-Winding Transformer and Large Transistor
Published in IEEE transactions on microwave theory and techniques (01-05-2024)“…This article introduces a CMOS low noise amplifier (LNA) designed to operate within 32-46 GHz frequency range, aiming to achieve an ultralow noise figure (NF)…”
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14
Low Insertion Loss, Compact 4-bit Phase Shifter in 65 nm CMOS for 5G Applications
Published in IEEE microwave and wireless components letters (01-01-2016)“…This letter presents a 28 GHz low insertion loss and compact size 4-bit phase shifter in 65 nm CMOS Technology. In order to get low insertion loss and compact…”
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15
Integration of SPDT Antenna Switch With CMOS Power Amplifier and LNA for FMICW Radar Front End
Published in IEEE transactions on microwave theory and techniques (01-11-2018)“…A single-pole double-throw antenna switch integrated with a CMOS power amplifier (PA) and a low-noise amplifier (LNA) by using a three-piece transmission line…”
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16
A 65‐nm 28‐GHz CMOS Wilkinson power divider with improved isolation
Published in Microwave and optical technology letters (01-04-2022)“…In this study, we implemented a Wilkinson power divider/combiner composed of lumped elements suitable for 28‐GHz of fifth‐generation mobile communication…”
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17
On‐chip triplexer using series‐first structure for connecting radio frequency modules in a 65 nm CMOS
Published in Microwave and optical technology letters (01-04-2022)“…In this study, we implemented a triplexer using a 65‐nm CMOS process. The triplexer was composed of a low‐pass filter (LPF), bandpass filter (BPF), and…”
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18
A G-Band Standing-Wave Push-Push VCO Using a Transmission-Line Resonator
Published in IEEE transactions on microwave theory and techniques (01-03-2015)“…In this paper, we propose a standing-wave push-push voltage-controlled oscillator (VCO) using a transmission-line (TL) resonator that covers a frequency range…”
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19
28 GHz compact 4‐way Wilkinson power divider/combiner using RCIN and mutual inductors in 0.13 μm CMOS technology
Published in Microwave and optical technology letters (01-08-2023)“…In this study, we proposed a 4‐way Wilkinson power divider/combiner (WPDC) with a series RC(resistor‐capacitor) isolation network (RCIN) and mutual inductors…”
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20
200-mm Si CMOS Process-Compatible Integrated Passive Device Stack for Millimeter-Wave Monolithic 3-D Integration
Published in IEEE transactions on electron devices (01-10-2023)“…In this article, we have demonstrated a simple 200-mm Si CMOS process-based integrated passive device (IPD) stack for millimeter-wave (mmW) monolithic 3-D…”
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