Search Results - "Kim, Byongju"

Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays by Kim, Byongju, Kim, Sun-Wook, Jang, Hyunchul, Kim, Jeong-Hoon, Koo, Sangmo, Kim, Dae-Hyun, Min, Byoung-Gi, Ko, Dae-Hong

“…We investigated the growth of the epitaxial Ge layers in a 40nm wide SiO2 trench array on Si by ultra-high vacuum chemical vapor deposition. If the thickness…”
Get full text

Characterization of residual strain in epitaxial Ge layers grown in sub-100 nm width SiO2 trench arrays by Kim, Byongju, Jang, Hyunchul, Koo, Sangmo, Kim, Jeong-Hoon, Kim, Dae-Hyun, Min, Byoung-Gi, Song, Jason S., Ko, Dae-Hong

Get full text

Strain evolution during the growth of epitaxial Ge layers between narrow oxide trenches by Kim, Byongju, Kim, Sun-Wook, Jang, Hyunchul, Kim, Jeong-Hoon, Koo, Sangmo, Kim, Dae-Hyun, Min, Byoung-Gi, Park, Se-Jeong, Song, Jason S., Ko, Dae-Hong

“…We have grown the high quality and compressively strained Ge epilayers on a Si substrate with 40-nm width SiO2 trench patterns at a growth temperature of…”
Get full text

Analysis of anisotropic in-plane strain behavior in condensed Si 1− x Ge x fin epitaxial layer using X-ray reciprocal space mapping by Jang, Hyunchul, Kim, Byongju, Koo, Sangmo, Choi, Yongjoon, Shin, Chan-Soo, Ko, Dae-Hong

Get full text

Analysis of anisotropic in-plane strain behavior in condensed Si1−xGex fin epitaxial layer using X-ray reciprocal space mapping by Jang, Hyunchul, Kim, Byongju, Koo, Sangmo, Choi, Yongjoon, Shin, Chan-Soo, Ko, Dae-Hong

“…Epitaxial Si1−xGex fin layers with x = 0.50 and 0.63 were selectively grown on trench patterned Si (001) substrates with trench widths of 65 and 90 nm. Using a…”
Get full text

Observation of in situ B-doped Epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition by Byongju Kim, Hyunchul Jang, Dae-Seop Byeon, Sangmo Koo, Dae-Hong Ko

“…In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface…”
Get full text

Characterization of strain relaxation behavior in Si1−xGex epitaxial layers by dry oxidation by Jang, Hyunchul, Kim, Byongju, Koo, Sangmo, Park, Seran, Ko, Dae-Hong

“…We fabricated fully strained Si 0.77 Ge 0.23 epitaxial layers on Si substrates and investigated their strain relaxation behaviors under dry oxidation and the…”
Get full text

Characterization of strain relaxation behavior in Si1−x Ge x epitaxial layers by dry oxidation by Jang, Hyunchul, Kim, Byongju, Koo, Sangmo, Park, Seran, Dae-Hong, Ko

“…We fabricated fully strained Si0.77Ge0.23 epitaxial layers on Si substrates and investigated their strain relaxation behaviors under dry oxidation and the…”
Get full text

Characterization of residual strain in epitaxial Ge layers grown in sub-100nm width SiO2 trench arrays by Kim, Byongju, Jang, Hyunchul, Koo, Sangmo, Kim, Jeong-Hoon, Kim, Dae-Hyun, Min, Byoung-Gi, Song, Jason S., Ko, Dae-Hong

“…We examined the selective epitaxial growth of Ge on Si(001) substrates with 40, 65, and 90nm width trench arrays by ultra-high vacuum chemical vapor…”
Get full text

Growth and electrical properties of in situ phosphorus-doped polycrystalline silicon films using Si3H8 and PH3 by Kim, Byongju, Jang, Hyunchul, Kim, Sun-Wook, Byeon, Dae-Seop, Koo, Sangmo, Song, Jason S., Ko, Dae-Hong

“…In situ phosphorus-doped polycrystalline silicon (polysilicon) films grown on silicon oxide layers using trisilane (Si3H8) and phosphine (PH3) as precursors…”
Get full text

Strain evolution during the growth of epitaxial Ge layers between narrow oxide trenches by Kim, Byongju, Kim, Sun-Wook, Jang, Hyunchul, Kim, Jeong-Hoon, Koo, Sangmo, Kim, Dae-Hyun, Min, Byoung-Gi, Park, Se-Jeong, Song, Jason S, Ko, Dae-Hong

“…We have grown the high quality and compressively strained Ge epilayers on a Si substrate with 40-nm width SiO sub(2) trench patterns at a growth temperature of…”
Get full text

On astigmatism of multi-beam optical stress sensor mounted at large incident angle by Jiang, Jinbo, Hwang, Heedon, Lee, Hak Sun, Kim, Byongju, Bong, Kee, Yoon, Euijoon

“…When multi-beam optical stress sensor (MOSS) system is mounted at a large incident angle ( α), despite an improvement of the resolution in the measurements, it…”
Get full text