Search Results - "Kikuchi, Katsuya"
-
1
Thermal management of a 3D packaging structure for superconducting quantum annealing machines
Published in Applied physics letters (26-04-2021)“…Quantum annealing (QA) is a computing paradigm for solving combinatorial optimization problems by finding the low-energy configurations of complicated Ising…”
Get full text
Journal Article -
2
Demonstration of 90 000 superconductive bump connections for massive quantum computing
Published in Japanese Journal of Applied Physics (01-04-2023)“…Abstract We developed fabrication and bonding technology of superconductive bump for massive quantum computing. A bonded test vehicle demonstrates supercurrent…”
Get full text
Journal Article -
3
Toward Practical-Scale Quantum Annealing Machine for Prime Factoring
Published in Journal of the Physical Society of Japan (15-06-2019)“…We propose a prime factorizer operated in a framework of quantum annealing (QA). The idea is the inverse operation of a multiplier implemented with QA-based…”
Get full text
Journal Article -
4
Si-Backside Protection Circuits Against Physical Security Attacks on Flip-Chip Devices
Published in IEEE journal of solid-state circuits (01-10-2020)“…This article presents a cryptographic key protection technique from physical security attacks through Si-backside of IC chip. Flip-chip packaging leads to a…”
Get full text
Journal Article -
5
Residual stress investigation of via-last through-silicon via by polarized Raman spectroscopy measurement and finite element simulation
Published in Japanese Journal of Applied Physics (01-07-2018)“…The residual stresses induced around through-silicon vias (TSVs) by a fabrication process is one of the major concerns of reliability. We proposed a…”
Get full text
Journal Article -
6
Evaluation of substrate noise suppression method to mitigate crosstalk among trough-silicon vias
Published in Japanese Journal of Applied Physics (01-04-2018)“…Substrate noise from a single through-silicon via (TSV) and the noise attenuation by a substrate tap and a guard ring are clarified. A CMOS test vehicle is…”
Get full text
Journal Article -
7
Validation of TSV thermo-mechanical simulation by stress measurement
Published in Microelectronics and reliability (01-04-2016)“…Because of the large mismatch in coefficients of thermal expansion (CTE) between copper vias and the silicon substrate in through-silicon vias (TSVs), thermal…”
Get full text
Journal Article -
8
Fabrication and stress analysis of annular-trench-isolated TSV
Published in Microelectronics and reliability (01-08-2016)“…The large mismatches among the coefficients of thermal expansion (CTE) of the metal via, insulator liner, and Si substrate of the through-silicon via (TSV)…”
Get full text
Journal Article -
9
Fabrication and stacking of through-silicon-via array chip formed by notchless Si etching and wet cleaning of first metal layer
Published in Japanese Journal of Applied Physics (01-06-2019)“…We combined a "via-last through-silicon via (TSV) process consisting of notchless Si etching and wet cleaning of the first metal layer" with the solder bonding…”
Get full text
Journal Article -
10
Quaternary and secondary structural imaging of a human hair by a VSFG-detected IR super-resolution microscope
Published in Chemical physics (20-06-2013)“…[Display omitted] ► IR super-resolution image of cross section of a human black hair were measured. ► For the amide III band, human hair gave strong VSFG…”
Get full text
Journal Article -
11
Investigation of transient thermal dissipation in thinned LSI for advanced packaging
Published in Japanese Journal of Applied Physics (01-04-2018)“…Thinning of LSI is necessary for superior form factor and performance in dense cutting-edge packaging technologies. At the same time, degradation of thermal…”
Get full text
Journal Article -
12
Development of a high-yield via-last through silicon via process using notchless silicon etching and wet cleaning of the first metal layer
Published in Japanese Journal of Applied Physics (01-07-2017)“…A high-yield via-last through silicon via (TSV) process has been developed using notchless Si etching and wet cleaning of the first metal layer. In this…”
Get full text
Journal Article -
13
Measurement and Analysis of Power Noise Characteristics for EMI Awareness of Power Delivery Networks in 3-D Through-Silicon Via Integration
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01-02-2018)“…The 3-D-stacked large-scale integration (3-D-LSI) chips provide densely integrated capacitance and low impedance in vertically and horizontally distributed…”
Get full text
Journal Article -
14
Cool Interconnect: A 1024-bit Wide Bus for Chip-to-Chip Communications in 3-D Integrated Circuits
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01-03-2019)“…In this paper, we present "Cool Interconnect," a 1024-bit wide bus that we have developed to provide a standardized method of interconnecting chips in 3-D…”
Get full text
Journal Article -
15
Hardness Characteristics of Au Cone-Shaped Bumps Targeted for 3-D Packaging Applications
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01-03-2019)“…Three-dimensional large scale integration (3D-LSI) packaging is crucial toward obtaining increased circuit density within a small footprint. In a 3D-LSI…”
Get full text
Journal Article -
16
Fine Cone-shaped Bumps for Three-dimensional LSI Package—An Optimization of Thermocompression Bonding Process
Published in Sensors and materials (01-01-2018)“…Fine cone-shaped bumps (6 ?m) were fabricated by a nanoparticle deposition method, where the nanoparticles were deposited onto hole patterns defined in a…”
Get full text
Journal Article -
17
A method enabling height-control of chips for edge-emitting laser stacking
Published in Japanese Journal of Applied Physics (01-04-2015)“…In this paper we present a stacking method that enables the mounting of edge-emitting laser (EEL) devices at compulsory positions for feeding a coupling…”
Get full text
Journal Article -
18
EMI performance of power delivery networks in 3D TSV integration
Published in 2016 International Symposium on Electromagnetic Compatibility - EMC EUROPE (01-09-2016)“…A three-dimensionally stacked, large-scale integration (3D-LSI) chip naturally provides densely capacitive and low-impedance characteristics in vertically and…”
Get full text
Conference Proceeding -
19
15-µm-pitch Cu/Au interconnections relied on self-aligned low-temperature thermosonic flip-chip bonding technique for advanced chip stacking applications
Published in Japanese Journal of Applied Physics (17-03-2014)“…In this paper, we report the development of reliable fine-pitch micro bump interconnections that used a high-precision room-temperature bonding approach. The…”
Get full text
Journal Article -
20
Heat transfer study of 3D packaging structure with superconducting TSV for practical-scale quantum annealing machines
Published in Japanese Journal of Applied Physics (01-05-2024)“…Abstract To avoid the interconnect crowding in a planar structure, three-dimensional (3D) integrated technologies are necessary for realizing practical…”
Get full text
Journal Article