Search Results - "Khvostikov, V.P."
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Concentrator PV modules and solar cells for TPV systems
Published in Solar energy materials and solar cells (01-10-2004)“…Concentrator technology is considered as a lower cost alternative to the “flat” solar arrays. For high concentration ratios (500× and higher) the use of…”
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A GaAs solar cell with an efficiency of 26.2% at 1000 suns and 25.0% at 2000 suns
Published in IEEE transactions on electron devices (01-05-2001)“…A GaAs solar cell without prismatic covers, with the highest efficiency known to the authors in the range of 1000-2000 suns for a single junction, is…”
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3
Native defect concentration in Czochralski-grown Te-doped GaSb by photoluminescence
Published in Solar energy materials and solar cells (01-06-2010)“…Photoluminescence characterization of Czochralaski-grown Te-doped GaSb wafers is presented. Calculations of the photoluminescence line shape of Te-doped GaSb…”
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Reducing optical losses in thermophotovoltaic systems
Published in Journal of power sources (31-07-2021)“…The reduction of optical losses in GaSb-based thermophotovoltaic converters via optimizing antireflection coatings and creating a back surface reflector on the…”
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Laser (λ = 809 nm) power converter based on GaAs
Published in Semiconductors (Woodbury, N.Y.) (01-05-2017)“…Laser-power converters with a wavelength of λ = 809 nm are fabricated on the basis of single-junction AlGaAs/GaAs heterostructures grown by the method of…”
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Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures
Published in Semiconductors (Woodbury, N.Y.) (01-09-2016)“…Photovoltaic laser-power converters for a wavelength of λ = 809 nm are developed and fabricated on the basis of single-junction AlGaAs/GaAs structures grown by…”
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Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE
Published in Semiconductors (Woodbury, N.Y.) (01-03-2018)“…Laser-power converters for the wavelength λ = 808 nm are fabricated by liquid-phase epitaxy (LPE) on the basis of n -Al 0.07 GaAs– p -Al 0.07 GaAs– p -Al 0.25…”
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GaSb-based photovoltaic laser-power converter for the wavelength λ ≈ 1550 nm
Published in Semiconductors (Woodbury, N.Y.) (01-08-2015)“…The photovoltaic (PV) laser-power converters for the wavelength λ = 1550 nm have been produced by diffusion from the gas phase into an n -GaSb substrate. PV…”
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Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm
Published in Semiconductors (Woodbury, N.Y.) (01-01-2016)“…The method of mathematical simulation is used to examine the influence exerted by the characteristics of the epitaxial structure and contact grid of…”
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GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics
Published in Semiconductors (Woodbury, N.Y.) (01-10-2016)“…Photovoltaic converters of laser light with a wavelength of λ = 1550 nm are developed using liquidphase epitaxy (LPE), metal-organic chemical-vapor deposition…”
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Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures
Published in Semiconductors (Woodbury, N.Y.) (01-05-2015)“…Results obtained in the development of a metal-organic vapor-phase epitaxy (MOVPE) technology and in studies of the electrical parameters of photovoltaic…”
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12
Temperature stability of contact systems for GaSb-based photovoltaic converters
Published in Semiconductors (Woodbury, N.Y.) (01-09-2014)“…The thermally induced degradation (temperature T ≈ 200°C) of Cr-Au, Cr-Au-Ag-Au, Ti-Pt-Au, and Ti-Pt-Ag contact systems deposited onto the surface of p -GaSb…”
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Simulation of the characteristics of InGaAs/InP-based photovoltaic laser-power converters
Published in Semiconductors (Woodbury, N.Y.) (2016)“…A method for mathematical simulation is used to analyze the efficiencies attainable in photovoltaic laser-power conversion at wavelengths of 1.3 and 1.55 μm in…”
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14
High-efficiency GaSb photocells
Published in Semiconductors (Woodbury, N.Y.) (01-02-2013)“…High-current solar cells based on gallium antimonide and intended for use in solar modules and systems with solar-spectrum splitting at large solar light…”
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Spectral-splitting concentrator photovoltaic modules based on AlGaAs/GaAs/GaSb and GaInP/InGaAs(P) solar cells
Published in Technical physics (01-07-2013)“…A concentrator photovoltaic module with sunlight spectral splitting by Fresnel lens and dichroic filters is developed. The photoelectric conversion efficiency…”
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A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters
Published in Semiconductors (Woodbury, N.Y.) (01-09-2011)“…The transmission-line model with radial and rectangular geometry of contact pads has been used to study the contact systems Cr-Au, Cr-Au-Ag-Au, Ti-Pt-Au,…”
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High-efficiency (η = 39.6%, AM 1.5D) cascade of photoconverters in solar splitting systems
Published in Semiconductors (Woodbury, N.Y.) (01-06-2011)“…A concentrator photovoltaic module with spectral splitting of solar radiation is developed. The module is based on a Fresnel lens and two dichroic filters…”
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Thermophotovoltaic generators based on gallium antimonide
Published in Semiconductors (Woodbury, N.Y.) (01-02-2010)“…Designs of thermophotovoltaic (TPV) generators with infrared emitters heated by concentrated solar radiation are developed, fabricated, and tested. Emitters…”
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Gas-fired thermophotovoltaic generator based on metallic emitters and GaSb cells
Published in Semiconductors (Woodbury, N.Y.) (01-09-2010)“…A prototype compact TPV generator with a propane burner (pressure 2 bar) and a metallic netted emitter has been developed and tested. A photovoltaic generator…”
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GaAs and AlGaAs photodiodes for ionizing radiation detectors
Published in Solid-state electronics (01-10-2003)“…In this work we present large area AlGaAs photodiodes for detecting the luminescent light of crystal scintillators in detectors of ionizing radiation,…”
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