Search Results - "Khrypunov, M. G."

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  1. 1

    Influence of Annealing in Freon on the Crystalline Structure of Cadmium-Telluride Layers and the Efficiency of Thin-Film Solar Cells on Their Basis by Khrypunov, G. S., Meriuts, A. V., Shelest, T. N., Khrypunov, M. G

    Published in Semiconductors (Woodbury, N.Y.) (01-01-2019)
    “…Solar cells (SCs) based on cadmium-telluride base layers, obtained by thermal evaporation and closed-space sublimation (CSS), are investigated. The base layers…”
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    Journal Article
  2. 2

    Development of Back and Front Contacts for CdTe Layer in Tandem Flexible Photoelectric Converters on Basis of CdTe/CuInSe2 by Kharchenko, Mykola M., Kovtun, N. A., Kudii, D. A., Khrypunov, M. G., Khrypunova, I. V.

    Published in International journal of photoenergy (01-01-2019)
    “…By the method of nonreactive high-frequency magnetron sputtering on Upilex polyimide films, transparent and conductive layers of ITO were obtained. These…”
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    Journal Article
  3. 3

    Electron bistability and switching effects in Mo/p-CdTe/Mo structure by Khrypunov, G. S., Nikitin, V. O., Rezinkin, O. L., Drozdov, A. N., Meriuts, A. V., Pirohov, O. V., Khrypunov, M. G., Kirichenko, M. V., Danyliuk, A. R.

    “…It has been experimentally shown that in a simple metal–semiconductor-metal structure with ohmic contacts, a reversible transition from a high-resistance state…”
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    Journal Article
  4. 4

    Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method by Klochko, N. P., Kopach, V. R., Khrypunov, G. S., Korsun, V. E., Lyubov, V. M., Zhadan, D. O., Otchenashko, A. N., Kirichenko, M. V., Khrypunov, M. G.

    Published in Semiconductors (Woodbury, N.Y.) (01-09-2018)
    “…A heterostructure promising for designing a backward diode is formed from a zinc-oxide nanorod array and a nanostructured copper-iodide film. The effect of…”
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    Journal Article
  5. 5

    Switching Effects from a High-Resistance State to a High Electrical Conductivity State in Mo/P-Cdte/Mo Structure by Drozdov, A. N., Khrypunov, G. S., Nikitin, V. O., Meriuts, A. V., Khrypunov, M. G., Kirichenko, M. V., Zaitsev, R. V.

    “…The time-voltage characteristics of high-resistance Mo/p-CdTe/Mo structures under influence of single voltage pulses in range from 20 to 80 V and duration up…”
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    Conference Proceeding
  6. 6

    Development of Back and Front Contacts for CdTe Layer in Tandem Flexible Photoelectric Converters on Basis of CdTe/CuInSe 2 by Khrypunov, M. G., Kudii, D. A., Kovtun, N. A., Kharchenko, M. M., Khrypunova, I. V.

    Published in International journal of photoenergy (24-03-2019)
    “…By the method of nonreactive high-frequency magnetron sputtering on Upilex polyimide films, transparent and conductive layers of ITO were obtained. These…”
    Get full text
    Journal Article
  7. 7

    Perspective metal-semiconductor-metal (Mo/p-CdTe/Mo) structure for switching elements by Drozdov, A.N., Khrypunov, G.S., Nikitin, V.O., Meriuts, A.V., Khrypunov, M.G., Kirichenko, M.V., Zaitsev, R.V.

    “…The time-voltage characteristics of high-resistance Mo/p-CdTe/Mo structures under influence of single voltage pulses in range from 20 to 80 V and duration up…”
    Get full text
    Conference Proceeding