Search Results - "Khosla, Robin"

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  1. 1

    Maskless lithography: an approach to SU-8 based sensitive and high-g Z-axis polymer MEMS accelerometer by Jangra, Mandeep, Arya, Dhairya Singh, Khosla, Robin, Sharma, Satinder K.

    “…In this work, Z-axis MEMS accelerometers are investigated with variation in spring topography. The serpentine spring structure demonstrated the optimum…”
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    Journal Article
  2. 2

    Design of an eco-friendly perovskite Au/NiO/FASnI3/ZnO0.25S0.75/FTO, device structure for solar cell applications using SCAPS-1D by Mattaparthi, Srinivas, Sinha, Dipesh K., Bhura, Aditya, Khosla, Robin

    Published in Results in optics (01-07-2023)
    “…Formamidinium Tin Iodide (FASnI3) based perovskite solar cells (PSC) have captured the interest of scientific community because of wide bandgap and good…”
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    Journal Article
  3. 3

    Effect of electrical stress on Au/Pb (Zr0.52Ti0.48) O3/TiOxNy/Si gate stack for reliability analysis of ferroelectric field effect transistors by Khosla, Robin, Sharma, Deepak K., Mondal, Kunal, Sharma, Satinder K.

    Published in Applied physics letters (13-10-2014)
    “…Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure with 20 nm thin lead zirconate titanate (PZT) ferroelectric film and 6 nm ultrathin high-κ…”
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  4. 4

    RF analysis and temperature characterization of pocket doped L-shaped gate tunnel FET by Goswami, Partha Pratim, Khosla, Robin, Bhowmick, Brinda

    “…This work exclusively illustrates the impact of low-k gate oxide material on the ambipolarity of SOI-DG TFET proposed previously in literature (Goswami and…”
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  5. 5

    Investigating the effects of doping gradient, trap charges, and temperature on Ge vertical TFET for low power switching and analog applications by Chappa, Vinay K., Yadav, Ajeet K., Deka, Anupal, Khosla, Robin

    “…•Effect of doping gradient, trap charges, & temperature on Ge VTFET is investigated.•The DC, Analog, and Linearity performance parameters are…”
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  6. 6

    Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices by Khosla, Robin, Sharma, Satinder K

    Published in ACS applied electronic materials (27-07-2021)
    “…Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged as a cornerstone for a wide spectrum of semiconductor technology and…”
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  7. 7

    Two-Dimensional Van Der Waals Hafnium Disulfide and Zirconium Oxide-Based Micro-Interdigitated Electrodes Transistors by Sharma, Shivani, Das, Subhashis, Khosla, Robin, Shrimali, Hitesh, Sharma, Satinder K.

    Published in IEEE transactions on electron devices (01-04-2023)
    “…There are indelible challenges related to transistor action and realization of emerging two-dimensional van der Waals (vdW) multilayer (2D<inline-formula>…”
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    Metal (Pt)/ferroelectric (SrBi2Ta2O9)/insulator (La2O3)/semiconductor (Si), MFIS structures for nonvolatile memory applications by Rathaur, Shivendra K., Khosla, Robin, Sharma, Satinder K.

    Published in Applied physics letters (09-08-2021)
    “…Extended data retention is a cardinal impediment for ferroelectric memories and serves a pivotal role for nonvolatile memory applications. Here, nonvolatile…”
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  10. 10

    High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications by Khosla, Robin, Schwarz, Daniel, Funk, Hannes S., Guguieva, Kateryna, Schulze, Jörg

    Published in Solid-state electronics (01-11-2021)
    “…Here, we report comprehensive investigations of aluminum oxide (Al2O3) high-κ gate oxides deposited via remote plasma enhanced atomic layer deposition…”
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  11. 11

    A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge-on-Si Using HZO Internal Voltage Amplification by Choudhary, Sumit, Schwarz, Daniel, Funk, Hannes S., Weishaupt, D., Khosla, Robin, Sharma, Satinder K., Schulze, Jorg

    Published in IEEE transactions on electron devices (01-05-2022)
    “…There are vital challenges to harness the unique assets of germanium (Ge) because of Ge-on-insulator (GeOI) processing issues. The advances in molecular beam…”
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  12. 12

    A highly sensitive, flexible SERS sensor for malachite green detection based on Ag decorated microstructured PDMS substrate fabricated from Taro leaf as template by Kumar, Pawan, Khosla, Robin, Soni, Mahesh, Deva, Dinesh, Sharma, Satinder K.

    Published in Sensors and actuators. B, Chemical (01-07-2017)
    “…[Display omitted] •The flexible SERS sensor is fabricated by using Taro leaf as template.•The fabricated SERS shows concentrating petal type effect for…”
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  13. 13

    Fluorine-chlorine co-doped TiO2/CSA doped polyaniline based high performance inorganic/organic hybrid heterostructure for UV photodetection applications by Sharma, Shivani, Khosla, Robin, Deva, Dinesh, Shrimali, Hitesh, Sharma, Satinder K.

    Published in Sensors and actuators. A. Physical. (01-07-2017)
    “…[Display omitted] •A High-Performance Inorganic/Organic hybrid UV photodetector is fabricated with fluorine-chlorine co-doped TiO2 and camphorsulphonic acid…”
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  14. 14

    Realization and Performance Analysis of Facile-Processed \mu -IDE-Based Multilayer HfS2/HfO2 Transistors by Sharma, Shivani, Das, Subhashis, Khosla, Robin, Shrimali, Hitesh, Sharma, Satinder K.

    Published in IEEE transactions on electron devices (01-07-2019)
    “…A new and interesting field-effect transistor (FET) structure based on multilayer HfS 2 as a channel material, integrated with Al <inline-formula> <tex-math…”
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    Investigations on structural, optical and magnetic properties of Fe and Dy co-doped ZnO nanoparticles by Malhotra, Jaskaran Singh, Singh, Arun Kumar, Khosla, Robin, Sharma, Satinder Kumar, Sharma, Gyaneshwar, Kumar, Sanjeev

    “…ZnO nanoparticles doped with dysprosium (Dy) were synthesized using sol–gel method. Further iron (Fe) doping was done to study the effect on structural,…”
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    Realization and Performance Analysis of Facile-Processed [Formula Omitted]-IDE-Based Multilayer HfS2/HfO2 Transistors by Sharma, Shivani, Das, Subhashis, Khosla, Robin, Shrimali, Hitesh, Sharma, Satinder K

    Published in IEEE transactions on electron devices (01-01-2019)
    “…A new and interesting field-effect transistor (FET) structure based on multilayer HfS2 as a channel material, integrated with Al [Formula…”
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  19. 19

    High-performance CSA-PANI based organic phototransistor by elastomer gratings by Sharma, Shivani, Khosla, Robin, Das, Subhashis, Shrimali, Hitesh, Sharma, Satinder K.

    Published in Organic electronics (01-06-2018)
    “…A new and exciting pattern transfer method is presented to enhance the photoconductivity of Ag/CSA-PANI/PMMA/ITO, organic field effect transistor (OFET) by…”
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  20. 20

    Highly UV sensitive Sn nanoparticles blended with polyaniline onto micro-interdigitated electrode array for UV-C detection applications by Sharma, Shivani, Das, Subhashis, Khosla, Robin, Shrimali, Hitesh, Sharma, Satinder K.

    “…Highly UV sensitive sub-5 nm Sn nanoparticles-Polyaniline (Sn (NPs)-PANI) composite material has been formulated by chemical polymerisation. A thin film of the…”
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