Search Results - "Khoshakhlagh, A."

Strain relief by periodic misfit arrays for low defect density GaSb on GaAs by Huang, S. H., Balakrishnan, G., Khoshakhlagh, A., Jallipalli, A., Dawson, L. R., Huffaker, D. L.

“…We demonstrate the growth of a low dislocation density, relaxed GaSb bulk layer on a (001) GaAs substrate. The strain energy generated by the 7.78% lattice…”
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Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices by Höglund, L., Ting, D. Z., Khoshakhlagh, A., Soibel, A., Hill, C. J., Fisher, A., Keo, S., Gunapala, S. D.

“…Optical modulation response is used to study the influence of radiative, Shockley-Read-Hall, and Auger recombination processes on the minority carrier lifetime…”
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Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms by Höglund, L., Ting, D. Z., Soibel, A., Fisher, A., Khoshakhlagh, A., Hill, C. J., Keo, S., Gunapala, S. D.

“…The influence of radiative recombination on the minority carrier lifetime in mid-wavelength InAs/InAsSb superlattices was investigated. From the lifetime's…”
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Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate by Huang, S. H., Balakrishnan, G., Khoshakhlagh, A., Dawson, L. R., Huffaker, D. L.

“…The authors describe simultaneous interfacial misfit (IMF) array formation along with antiphase domain (APD) suppression in highly mismatched ( Δ a 0 / a 0 =…”
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Influence of proton radiation on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices by Höglund, L., Ting, D. Z., Khoshakhlagh, A., Soibel, A., Fisher, A., Hill, C. J., Keo, S., Rafol, S., Gunapala, S. D.

“…Influence of proton radiation on the minority carrier lifetime and on carrier concentrations in InAs/InAsSb superlattices has been studied for radiation doses…”
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III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs by Balakrishnan, G., Tatebayashi, J., Khoshakhlagh, A., Huang, S. H., Jallipalli, A., Dawson, L. R., Huffaker, D. L.

“…The authors demonstrate and characterize type-II GaSb quantum dot (QD) formation on GaAs by either Stranski-Krastanov (SK) or interfacial misfit (IMF) growth…”
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Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials by Jallipalli, A., Balakrishnan, G., Huang, S.H., Khoshakhlagh, A., Dawson, L.R., Huffaker, D.L.

“…We describe a mathematical model to elucidate the strain energy distribution in the atomic arrangement resulting from a periodic pure edge, 90° interfacial…”
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Hydrogenation Defect Passivation for Improved Minority Carrier Lifetime in Midwavelength Ga-Free InAs/InAsSb Superlattices by Hossain, K., Höglund, L., Phinney, L. C., Golding, T. D., Wicks, G., Khoshakhlagh, A., Ting, D. Z.-Y., Soibel, A., Gunapala, S. D.

“…Two hydrogenation techniques were used to passivate defects in InAs/InAsSb superlattices: UV-photon assisted hydrogenation with and without DC bias…”
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Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (∼8 μm) infrared detection by Khoshakhlagh, A., Plis, E., Myers, S., Sharma, Y.D., Dawson, L.R., Krishna, S.

“…Optimization of various growth parameters for type-II 13 MLs InAs/7 MLs GaSb strained layer superlattices (SLSs) ( λ cut-off ∼8 μm at 300 K), grown by solid…”
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Epitaxial growth and formation of interfacial misfit array for tensile GaAs on GaSb by Huang, S. H., Balakrishnan, G., Mehta, M., Khoshakhlagh, A., Dawson, L. R., Huffaker, D. L., Li, P.

“…The authors report the formation of an interfacial misfit (IMF) array in the growth of relaxed GaAs bulk layers on a (001) GaSb surface. Under specific…”
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Formation and optical characteristics of strain-relieved and densely stacked GaSb∕GaAs quantum dots by Tatebayashi, J., Khoshakhlagh, A., Huang, S. H., Dawson, L. R., Balakrishnan, G., Huffaker, D. L.

“…The authors report the formation and optical characteristics of type-II, strain-relieved, and densely stacked GaSb∕GaAs quantum dots (QDs) using an interfacial…”
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GaSb quantum-well-based "buffer-free" vertical light emitting diode monolithically embedded within a GaAs cavity incorporating interfacial misfit arrays by Mehta, M., Balakrishnan, G., Huang, S., Khoshakhlagh, A., Jallipalli, A., Patel, P., Kutty, M. N., Dawson, L. R., Huffaker, D. L.

“…The authors demonstrate a monolithic, electrically injected, vertically emitting Ga Sb ∕ Al Ga Sb light emitting diode (LED) emitting at 1.6 μ m comprised of a…”
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Study of Surface Treatments on InAs/GaSb Superlattice LWIR Detectors by Kutty, M. N., Plis, E., Khoshakhlagh, A., Myers, S., Gautam, N., Smolev, S., Sharma, Y. D., Dawson, R., Krishna, S., Lee, S. J., Noh, S. K.

“…We report on the comparison of mesa sidewall profiles of InAs/GaSb strained-layer superlattice (SLS) detector structures ( λ 50% cutoff  ≈ 14  μ m at V bias…”
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Room-Temperature Optically Pumped (Al)GaSb Vertical-Cavity Surface-Emitting Laser Monolithically Grown on an Si(1 0 0) Substrate by Balakrishnan, G., Jallipalli, A., Rotella, P., Shenghong Huang, Khoshakhlagh, A., Amtout, A., Krishna, S., Dawson, L.R., Huffaker, D.L.

“…We report a monolithic vertical-cavity surface-emitting laser (VCSEL) on an Si(0 0 1) substrate operating under room-temperature optically pumped conditions…”
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Split tensile strength of slag-based geopolymer composites reinforced with steel fibers: Application of Taguchi method in evaluating the effect of production parameters and their optimum condition by Khalaj, Mohammad-Javad, Khoshakhlagh, Ali, Bahri, Sirous, Khoeini, Mahdi, Nazerfakhari, Mohsen

“…In the present study, split tensile strength of slag based geopolymer composite reinforced with steel fibers has been designed by Taguchi method. In this…”
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Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation by Kim, H. S., Plis, E., Khoshakhlagh, A., Myers, S., Gautam, N., Sharma, Y. D., Dawson, L. R., Krishna, S., Lee, S. J., Noh, S. K.

“…We report on SU-8 passivation for performance improvement of type-II InAs/GaSb strained layer superlattice detectors ( λ cut-off ∼ 4.6   μ m ) . Optical and…”
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Bias dependent dual band response from InAs∕Ga(In)Sb type II strain layer superlattice detectors by Khoshakhlagh, A., Rodriguez, J. B., Plis, E., Bishop, G. D., Sharma, Y. D., Kim, H. S., Dawson, L. R., Krishna, S.

“…We report on the multispectral properties of infrared photodetectors based on type II InAs∕Ga(In)Sb strain layer superlattices using an nBn heterostructure…”
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A significant toughness enhancement, and microstructural evolution of an electric resistance welded (ERW) microalloyed steel by Mousavi Anijdan, S.H., Aghaie-Khafri, M., Khoshakhlagh, A.R., Eivani, A.R., Park, N., Jafarian, H.R.

“…In this investigation, microstructural evolution and mechanical properties of an X52 microalloyed steel processed by a full scale industrial electric…”
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Lasing characteristics of GaSb∕GaAs self-assembled quantum dots embedded in an InGaAs quantum well by Tatebayashi, J., Khoshakhlagh, A., Huang, S. H., Balakrishnan, G., Dawson, L. R., Huffaker, D. L., Bussian, D. A., Htoon, H., Klimov, V.

“…The authors report the optical characteristics of GaSb∕GaAs self-assembled quantum dots (QDs) embedded in an InGaAs quantum well (QW). Variations in the In…”
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Optical Characteristics of Narrow Band Gap InAs/InAsSb Superlattices by Khoshakhlagh, A., Ting, L. Hoglund D. Z., Soibel, A., Gunapala, S. D.

“…The minority carrier lifetime is one of the important material characterization tools for determining the potential device performance of infrared detectors,…”
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