Search Results - "Kholevchuk, V. V."
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Effect of film growth rate and thickness on properties of Ge/GaAs(100) thin films
Published in Thin solid films (01-01-2014)“…We present a profound effect of film growth rate and thickness on the electrical properties, intrinsic stresses and surface/interface morphology of thin (1nm…”
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Cryogenic resistance thermometers based on Ge–InP films
Published in Tekhnologii͡a︡ i konstruirovanie v ėlektronnoĭ apparature (01-12-2020)“…Despite the large number of scientific articles devoted to the development of cryogenic resistance thermometers, not many of these thermometers are…”
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Ge-on-GaAs film resistance thermometers: Low-temperature conduction and magnetoresistance
Published in Cryogenics (Guildford) (2011)“…► Exponent x in VRH law is different (0.25–0.67) for different Ge–GaAs thermometers. ► Ge films with exponent x in VRH close to 0.25 have high positive…”
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Ge-on-GaAs film resistance thermometers for cryogenic applications
Published in Cryogenics (Guildford) (01-09-2007)“…Our paper discusses and reviews the properties of a range of semiconductor sensors, which have been developed for thermometry in cryogenic applications. The…”
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Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films
Published in Tekhnologii͡a︡ i konstruirovanie v ėlektronnoĭ apparature (01-08-2014)“…Ge thin films condensation in vacuum onto semiinsulating GaAs(100) substrates was investigated. The methods of atomic-force microscopy, optical spectroscopy,…”
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Dual function sensors for concurrent measurement of temperature and magnetic field in cryogenic applications
Published in Cryogenics (Guildford) (01-09-2008)“…Dual function sensors (DFSs) for concurrent measurement of temperature and magnetic field in cryogenic applications have been developed and characterized. The…”
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Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications
Published in Sensors and actuators. A, Physical (01-08-2001)“…New types of miniature (1.2 mm diameter×1.0 mm long) temperature sensors based on germanium (Ge) films and silicon diodes have been developed and produced. The…”
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Journal Article Conference Proceeding -
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High positive magnetoresistance in Ge films at low temperatures
Published in Applied physics letters (04-01-2017)“…High positive magnetoresistance is found and investigated in p-Ge films on GaAs at low temperatures (1.4–4.2 K) and in magnetic fields up to 14 T. The film…”
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Germanium-film resistance microthermometers intended for operation within the temperature range of 0.03–300 K
Published in Journal of engineering physics and thermophysics (01-01-2000)“…Germanium-film resistance microthermometers (Ø1.2 × 1.0 mm) are worked out and manufactured to be used in a wide range of temperatures from superlow to room…”
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A silicon carbide thermistor
Published in Semiconductor physics, quantum electronics, and optoelectronics (15-12-2006)Get full text
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Nanotechnology, internal mechanical stresses, optical and electronic properties of nanostructures with germanium films on indium phosphide substrates
Published in 2017 IEEE 7th International Conference Nanomaterials: Application & Properties (NAP) (01-09-2017)“…Nanostructures with germanium films on semi-insulating indium phosphide substrates were prepared by thermal deposition in vacuum of 10 -4 Pa at different film…”
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Conference Proceeding -
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Surface structure and electrical properties of Ge films on semi-insulating GaAs substrates
Published in 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) (2002)“…Structural, electrical and optical properties of Ge films on semi-insulating GaAs substrates have been investigated. Ge films were obtained using thermal…”
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Conference Proceeding -
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Ge/GaAs thin films for thermometer and bolometer application
Published in 2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) (01-04-2013)“…We demonstrate that the heavily doped and completely compensated Ge thin films on semi-insulating GaAs substrates are very promising for bolometer and…”
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Conference Proceeding -
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Ge-film resistance and Si-based diode temperature microsensors
Published in ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) (2000)“…New types of miniature temperature sensors based on Ge films and silicon diodes have been developed and produced. The Ge film microthermometers are intended…”
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Conference Proceeding