EUV laser produced plasma source development
This paper describes the development of a LPP EUV source using a CO 2 laser with tin droplet targets. Burst power of 100 W and average power of 25 W has been achieved. Collector mirrors have been fabricated with >50% reflectivity and show stable EUV images. Multiple debris mitigation techniques p...
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Published in: | Microelectronic engineering Vol. 86; no. 4; pp. 509 - 512 |
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Main Authors: | , , , , , , , , , , , |
Format: | Journal Article Conference Proceeding |
Language: | English |
Published: |
Amsterdam
Elsevier B.V
01-04-2009
Elsevier |
Subjects: | |
Online Access: | Get full text |
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Summary: | This paper describes the development of a LPP EUV source using a CO
2 laser with tin droplet targets. Burst power of 100
W and average power of 25
W has been achieved. Collector mirrors have been fabricated with >50% reflectivity and show stable EUV images. Multiple debris mitigation techniques preserve mirror reflectivity. Manufacturing of the first production systems is in progress. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/j.mee.2008.10.020 |