Search Results - "Khmyrova, I."

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  1. 1

    Analysis of plasma oscillations in high-electron mobility transistorlike structures: Distributed circuit approach by Khmyrova, I., Seijyou, Yu

    Published in Applied physics letters (01-10-2007)
    “…We develop simple distributed circuit model of the high-electron mobility transistor (HEMT)-like structure for the analysis of the effects associated with…”
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    Journal Article
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    Blue-green light-emitting diode with patterned electrode: Spectral analysis by Nishidate, Y., Khmyrova, I., Kholopova, Yu, Polushkin, E., Zemlyakov, V., Tsatsul'nikov, A., Shapoval, S.

    Published in Microelectronic engineering (01-05-2019)
    “…Two step decomposition procedure was developed and implemented to analyze experimentally measured EL-spectra of light-emitting diode (LED) with mesh-like top…”
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    Journal Article
  3. 3

    Blue-green InGaN/GaN light-emitting diode with mesh-like top metal electrode by Kholopova, Yu, Khmyrova, I., Larkin, S., Zemlyakov, V., Egorkin, V., Tsatsul'nikov, A., Nishidate, Y., Shapoval, S.

    Published in Microelectronic engineering (25-04-2017)
    “…Light-emitting diodes (LEDs) with blue-green dual-wavelength emission and top metal electrode patterned as a mesh were fabricated using InGaN/GaN material…”
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    Journal Article
  4. 4

    On the detectivity of quantum-dot infrared photodetectors by Ryzhii, V., Khmyrova, I., Mitin, V., Stroscio, M., Willander, M.

    Published in Applied physics letters (28-05-2001)
    “…We report on the analysis of thermally-limited operation of quantum-dot infrared photodetectors (QDIPs). A device model is developed and used to calculate the…”
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    Journal Article
  5. 5

    Characteristics of integrated QWIP-HBT-LED up-converter by Oktyabrsky, S., Khmyrova, I., Ryzhii, V.

    Published in IEEE transactions on electron devices (01-12-2003)
    “…In this paper, we evaluate characteristics of a novel device based on the integration of a quantum well IR photodetector (QWIP), a heterostructure bipolar…”
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    Journal Article
  6. 6

    Impact of transit-time and capture effects on high-frequency performance of multiple quantum-well infrared photodetectors by Ryzhii, V., Khmyrova, I., Ryzhii, M.

    Published in IEEE transactions on electron devices (01-01-1998)
    “…An analytical model of multiple quantum-well photodetectors (QWIP's) is proposed and used to evaluate their high-frequency performance. The model accounts for…”
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    Journal Article
  7. 7

    Photon mechanism of image smearing in integrated QWIP-LED pixelless devices by Ryzhii, V., Khmyrova, I., Bois, P.

    Published in IEEE journal of quantum electronics (01-11-1999)
    “…An analytical model of an integrated quantum-well infrared photodetector (QWIP) and light-emitting diode (LED) operating as a pixelless image up-converter is…”
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    Journal Article
  8. 8

    Analysis of integrated quantum-well infrared photodetector and light-emitting diode for implementing pixelless imaging devices by Ryzhii, V., Liu, H.C., Khmyrova, I., Ryzhii, M.

    Published in IEEE journal of quantum electronics (01-09-1997)
    “…The conversion of images into nonuniform distribution of the output current density in a multiple-quantum-well structure for an infrared pixelless imaging…”
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    Journal Article
  9. 9

    High-frequency performance of lateral p-n junction photodiodes by Tsutsui, N., Ryzhii, V., Khmyrova, I., Vaccaro, P.O., Taniyama, H., Aida, T.

    Published in IEEE journal of quantum electronics (01-06-2001)
    “…We developed an analytical device model for quantum well lateral p-n junction photodiodes (LJPDs). The model takes into account the features of the carrier…”
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    Journal Article
  10. 10

    A quasi-three-dimensional model for plasma resonances in hot electron transistors by Khmyrova, I., Ryzhii, V.

    Published in Microelectronic engineering (01-06-1999)
    “…An analytical device model for hot-electron transistors (HETs) is proposed and used to study plasma effects in a two-dimensional electron gas in their base…”
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    Journal Article Conference Proceeding
  11. 11

    Electron spreading effects in quantum well pixelless imagers by Khmyrova, I, Bois, Ph, Ryzhii, V

    Published in Physica. B, Condensed matter (01-12-1999)
    “…The performance of pixelless imaging device based on an integrated quantum well photodetector and light-emitting diode is studied theoretically. It is shown…”
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    Journal Article
  12. 12

    Capture and transit-time electron effects in high-frequency operation of multiple quantum well infrared photodetectors by Ryzhii, V, Khmyrova, I, Ryzhii, M

    “…An analytical model of multiple quantum well infrared photodetectors (QWIPs) is used to calculate their frequency-dependent responsivity and bandwidth. The…”
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    Journal Article
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    InGaN/GaN Light-Emitting Diodes with Designed Top Electrode: Models and Simulation by Khmyrova, I., Nishidate, Y., Kholopova, J., Polushkin, E., Kovalchuk, A., Zemlyakov, V., Tsatsul'nikov, A., Shapoval, S.

    “…Light-emitting diodes (LEDs) with InGaN/GaN quantum wells (QWs) and top metal electrode designed as a mesh are discussed. Analysis of LED's experimental…”
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    Conference Proceeding
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    Terahertz resonant frequencies of grating-bicoupled plasma wave devices by Khmyrova, I.

    “…Resonant frequencies of plasma oscillations in the grating-bicoupled HEMT-like structures with interdigitated gates are evaluated in the presence of…”
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    Conference Proceeding
  19. 19

    Plasma effects in HEMT-like structures: Equivalent circuit model and simulation by Khmyrova, I.

    Published in 2007 Korea-Japan Microwave Conference (01-11-2007)
    “…An electric equivalent circuit is developed to study the manifestation of the plasma oscillations excited in the two-dimensional electron (2DE) channel of…”
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    Conference Proceeding
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