Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films. The capability of our model has been demonstrated by exc...

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Bibliographic Details
Published in:	International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) pp. 39.2.1 - 39.2.4
Main Authors:	Liu, C.H., Lee, M.T., Chih-Yung Lin, Chen, J., Schruefer, K., Brighten, J., Rovedo, N., Hook, T.B., Khare, M.V., Shih-Fen Huang, Wann, C., Tze-Chiang Chen, Ning, T.H.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 2001
Subjects:	Dielectrics Microelectronics MOSFETs Negative bias temperature instability Niobium compounds Stress measurement Thermal degradation Thermal stresses Threshold voltage Titanium compounds
Online Access:	Get full text
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Summary:	This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films. The capability of our model has been demonstrated by excellent agreement between the fitted curves and experiments for ultrathin gate dielectrics (1.7 nm - 3.3 nm) fabricated by different processes. Among the various gate dielectrics under consideration, RPN (remote plasma nitrided oxide) is most resistant to NBTI stress.
ISBN:	0780370503 9780780370500
DOI:	10.1109/IEDM.2001.979649