Search Results - "Khairnar, Anil G"

HfO2 gate dielectric on Ge (111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment by Agrawal, Khushabu S., Patil, Vilas S., Khairnar, Anil G., Mahajan, Ashok M.

“…•The GeON/HfO2 gate stack is formed on germanium (111) substrate.•The rapid thermal nitridation was carried out by using NH3.•The GeON forms the stable…”
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Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors by TIRMALI, P. M, KHAIRNAR, Anil G, JOSHI, Bhavana N, MAHAJAN, A. M

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Sol–gel deposited ceria thin films as gate dielectric for CMOS technology by KHAIRNAR, ANIL G, MAHAJAN, ASHOK M

“…In this work, cerium oxide thin films were prepared using cerium chloride heptahydrate, ethanol and citric acid as an additive by sol–gel spin-coating…”
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Preparation of rare earth CeO2 thin films using metal organic decomposition method for metal-oxide–semiconductor capacitors by Agrawal, Khushabu S., Patil, Vilas S., Khairnar, Anil G., Mahajan, Ashok M.

“…Investigation of metal organic decomposed rare earth cerium oxide thin films deposited on Si substrate by sol–gel spin coating technique was carried out. The…”
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High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates by Mahajan, A. M., Khairnar, Anil G., Thibeault, B. J.

“…Germanium has been reconsidered as a potential substitute channel material for high-performance MOSFETs due to its intrinsic high mobilities for both electrons…”
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Enhancement in mechanical properties of silica low-k thin films using wet chemical technique by Mhaisagar, Yogesh S, Gaikwad, Anil S, Khairnar, Anil G, Mahajan, Ashok M

“…Silica low-k films have been deposited on silicon wafer using sol-gel spin-on method. The tetraethyl orthosilicate (TEOS) has been used as a precursor…”
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Structural and electrical characteristics of RF-sputtered HfO 2 high-k based MOS capacitors by Tirmali, P.M., Khairnar, Anil G., Joshi, Bhavana N., Mahajan, A.M.

“…► In this study we have deposited and analyzed the HfO 2 as the high-k dielectric for MOS capacitor. ► The AFM studies prove the deposited films are very much…”
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Structural and electrical characteristics of RF-sputtered HfO sub(2) high-k based MOS capacitors by Tirmali, P M, Khairnar, Anil G, Joshi, Bhavana N, Mahajan, A M

“…The HfO sub(2) high-k thin films have been deposited on p-type (1 0 0) silicon wafer using RF magnetron sputtering technique. The XRD, AFM and Ellipsometric…”
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